Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in InxGa1-xN/In0.02Ga0.98N superlattices

2018 ◽  
Vol 124 (6) ◽  
pp. 065701 ◽  
Author(s):  
P. Wolny ◽  
M. Anikeeva ◽  
M. Sawicka ◽  
T. Schulz ◽  
T. Markurt ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Growth Temperature ◽  
Indium Content ◽  
Ingan Quantum Wells

Green-amber emission from high indium content InGaN quantum wells improved by interface modification of semipolar (112̄2) GaN templates

CrystEngComm ◽  
2019 ◽  
Vol 21 (2) ◽  
pp. 244-250 ◽  
Author(s):  
Zhengyuan Wu ◽  
Shiqiang Lu ◽  
Peng Yang ◽  
Pengfei Tian ◽  
Laigui Hu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Indium Content ◽  
Interface Modification ◽  
High Indium Content ◽  
Ingan Quantum Wells

Green-amber-emitting high indium content InGaN quantum wells improved by interface modification of semipolar (112̄2) GaN templates.

Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content

2014 ◽  
Vol 115 (21) ◽  
pp. 213512 ◽  
Author(s):  
A. Vaitkevičius ◽  
J. Mickevičius ◽  
D. Dobrovolskas ◽  
Ö. Tuna ◽  
C. Giesen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Stark Effect ◽  
Indium Content ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Ingan Quantum Wells

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

2009 ◽  
Vol 95 (6) ◽  
pp. 061104 ◽  
Author(s):  
Hongping Zhao ◽  
Guangyu Liu ◽  
Xiao-Hang Li ◽  
G. S. Huang ◽  
Jonathan D. Poplawsky ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Profile ◽  
Growth Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Ingan Quantum Wells

The Optical and Structural Properties of InxGa1-XN/GaN Multiple Quantum Wells by Metal Organic Chemical Vapor Deposition

2012 ◽  
Vol 535-537 ◽  
pp. 1270-1274
Author(s):  
Li Jun Han ◽  
Bin Feng Ding ◽  
Guo Man Lin
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Growth Temperature ◽  
Chemical Vapor ◽  
Material Design ◽  
Indium Content ◽  
Peak Position ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Single Cycle

The structural and optical properties of InxGa1-xN/GaN multi-quantum wells (MQWs) grown on sapphire are discussed. Two kinds of InxGa1-xN/GaN MQWs with same period and different single cycle thickness and different growth temperature of MQWs are selected. Firstly, from the result of SRXRD and RBS/C, we can estimate that indium content of InxGa1-xN /GaN MQWs is 0.033 and 0.056, the single cycle thickness of MQWs is 13.04nm and 15.86nm respectively. Secondly the PL results indicate the optical properties of InxGa1-xN/GaN MQWs. Finally, we find indium content decreasing with increasing growth temperature of MQWs and the emission intensity reducing with temperature increasing, the emission optical peak position versus temperature show the “S-shaped” character. All these experimental results testify the material design of InxGa1-xN/GaN MQWs will have potential applications in spectral LED.

scholarly journals Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 308 ◽  
Author(s):  
ChengDa Tsai ◽  
Ikai Lo ◽  
YingChieh Wang ◽  
ChenChi Yang ◽  
HongYi Yang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Flux Ratio ◽  
Indium Content ◽  
High Indium Content

Indium-incorporation with InxGa1-xN layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of InxGa1-xN layer increased to 44.2% with an In/(In + Ga) flux ratio of up to 0.6 for a growth temperature of 620 °C, and quickly dropped with a flux ratio of 0.8. At a fixed In/(In + Ga) flux ratio of 0.6, we found that the indium content decreased as the growth temperature increased from 600 °C to 720 °C and dropped to zero at 780 °C. By adjusting the growth parameters, we demonstrated an appropriate InxGa1-xN layer as a buffer to grow high-indium-content InxGa1-xN/GaN microdisk quantum wells for micro-LED applications.

Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates

2012 ◽  
Vol 101 (13) ◽  
pp. 131111 ◽  
Author(s):  
B. Galler ◽  
P. Drechsel ◽  
R. Monnard ◽  
P. Rode ◽  
P. Stauss ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Indium Content ◽  
Silicon Substrates ◽  
Ingan Quantum Wells

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

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