Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

2009 ◽  
Vol 95 (6) ◽  
pp. 061104 ◽  
Author(s):  
Hongping Zhao ◽  
Guangyu Liu ◽  
Xiao-Hang Li ◽  
G. S. Huang ◽  
Jonathan D. Poplawsky ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Profile ◽  
Growth Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Ingan Quantum Wells

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

2021 ◽  
Vol 118 (18) ◽  
pp. 182102
Author(s):  
Xiaoyu Zhao ◽  
Bin Tang ◽  
Liyan Gong ◽  
Junchun Bai ◽  
Jiafeng Ping ◽  
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Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Yellow Light ◽  
Light Emitting ◽  
Rational Construction ◽  
Ingan Quantum Wells

Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes

2011 ◽  
Author(s):  
Hongping Zhao ◽  
Jing Zhang ◽  
Guangyu Liu ◽  
Takahiro Toma ◽  
Jonathan D. Poplawsky ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Ingan Quantum Wells
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