Influence of a composite free layer structure on thermal stability of perpendicular magnetic tunnel junction

2018 ◽  
Vol 124 (6) ◽  
pp. 063903 ◽  
Author(s):  
Witold Skowroński ◽  
Stanisław Łazarski ◽  
Piotr Rzeszut ◽  
Sławomir Ziętek ◽  
Jakub Chęciński ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Tunnel Junction ◽  
Layer Structure ◽  
Magnetic Tunnel Junction ◽  
Free Layer ◽  
Thermal Stability Of

Improved thermal stability of Mn-Ir-based magnetic tunnel junction with nano-oxide layer

2004 ◽  
Vol 201 (8) ◽  
pp. 1716-1719
Author(s):  
S. Y. Yoon ◽  
Y. I. Kim ◽  
D. H. Lee ◽  
Y. S. Kim ◽  
S. J. Suh
Keyword(s):  
Thermal Stability ◽  
Oxide Layer ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Nano Oxide ◽  
Thermal Stability Of

Thermal stability of the exchanged biased CoFe/IrMn electrode for the magnetic tunnel junction as a function of CoFe thickness

2002 ◽  
Vol 92 (10) ◽  
pp. 6241-6244 ◽  
Author(s):  
J. H. Lee ◽  
S. J. Kim ◽  
C. S. Yoon ◽  
C. K. Kim ◽  
B. G. Park ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Thermal Stability Of

Determination of Thermal Stability of Magnetic Tunnel Junction Using Time-Resolved Single-Shot Measurement

2014 ◽  
Vol 50 (1) ◽  
pp. 1-4 ◽  
Author(s):  
C. T. Chao ◽  
C. Y. Kuo ◽  
Lance Horng ◽  
M. Tsunoda ◽  
M. Takahashi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Single Shot ◽  
Time Resolved ◽  
Thermal Stability Of

Effect of MgO Barrier Thickness with Tilted Magnetization on Temperature Increase in Magnetic Tunnel Junction Devices during Current-Induced Magnetization Switching

2015 ◽  
Vol 781 ◽  
pp. 172-175
Author(s):  
Chayada Surawanitkun
Keyword(s):  
Thermal Stability ◽  
Layer Thickness ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Free Layer ◽  
Barrier Thickness ◽  
Magnetization Switching ◽  
Magnetization Direction ◽  
Initial Magnetization ◽  
Temperature Increment

Recently, there has been a growing interest in the thermal stability in magnetic tunnel junction (MTJ) devices with an aspect of the temperature increment during current-induced magnetization switching (CIMS) process. In this work, the temperature increment is explored with factors of the tile of the initial magnetization direction in free layer, θ0, and the MgO layer thickness for different pulse durations, tp. The results show that the highest temperature in MTJ nanopillar is significant at the θ0 of1°-5° and the pulse duration tp < 0.4 ns. Moreover, the temperature results with decreasing the MgO layer thickness are not considerable difference at θ0 of1°-5° for the same tp.

Material parameters and thermal stability of synthetic ferrimagnet free layers in magnetic tunnel junction nanopillars

2012 ◽  
Vol 112 (5) ◽  
pp. 053922 ◽  
Author(s):  
D. Markó ◽  
T. Devolder ◽  
K. Miura ◽  
K. Ito ◽  
Joo-Von Kim ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Material Parameters ◽  
Thermal Stability Of

scholarly journals Magnetization Dynamics in a Perpendicular Anisotropy Free Layer under a Spin Torque Effect with Crossed Polarization

2020 ◽  
Vol 25 (1) ◽  
pp. 54
Author(s):  
Nafeesa Rahman ◽  
Rachid Sbiaa
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Film Plane ◽  
Spin Torque ◽  
Spin Angular Momentum ◽  
Perpendicular Anisotropy ◽  
Free Layer ◽  
Magnetization Dynamics ◽  
Magnetization Direction ◽  
Spin Polarized

The transfer of spin angular momentum from a spin polarized current provides an efficient way of reversing the magnetization direction of the free layer of the magnetic tunnel junction (MTJ), and while faster reversal will reduce the switching energy, this in turn will lead to low power consumption. In this work, we propose a design where a spin torque oscillator (STO) is integrated with a conventional magnetic tunnel junction (MTJ) which will assist in the ultrafast reversal of the magnetization of the free layer of the MTJ. The structure formed (MTJ stacked with STO), will have the free layer of the MTJ sandwiched between two spin polarizer layers, one with a fixed magnetization direction perpendicular to film plane (main static polarizer) and the other with an oscillatory magnetization (dynamic polarizer). The static polarizer is the fixed layer of the MTJ itself and the dynamic polarizer is the free layer of the STO.

scholarly journals Voltage Controlled Domain Wall Motion based Neuron and Stochastic Magnetic Tunnel Junction Synapse for Neuromorphic Computing Applications

2021 ◽  
Author(s):  
Aijaz Lone ◽  
Selma Amara ◽  
Hossein Fariborzi
Keyword(s):  
Domain Wall ◽  
Tunnel Junction ◽  
Thermal Noise ◽  
Wall Motion ◽  
Magnetic Tunnel Junction ◽  
Domain Wall Motion ◽  
Spin Orbit ◽  
Free Layer ◽  
Digit Recognition ◽  
Transport Studies

The present work discusses the proposal of a spintronic neuromorphic system with spin orbit torque driven domain wall motion-based neuron and synapse. We propose a voltage-controlled magnetic anisotropy domain wall motion based magnetic tunnel junction neuron. We investigate how the electric field at the gate (pinning site), generated by the voltage signals from pre-neurons, modulates the domain wall motion, which reflects in the non-linear switching behaviour of neuron magnetization. For the implementation of synaptic weights, we propose 3-terminal MTJ with stochastic domain wall motion in the free layer. We incorporate intrinsic pinning effects by creating triangular notches on the sides of the free layer. The pinning of domain wall and intrinsic thermal noise of device lead to the stochastic behaviour of domain wall motion. The control of this stochasticity by the spin orbit torque is shown to realize the potentiation and depression of the synaptic weight. The micromagnetics and spin transport studies in synapse and neuron are carried out by developing a coupled micromagnetic Non-Equilibrium Green’s Function (<i>MuMag-NEGF</i>) model. The minimization of the writing current pulse width by leveraging the thermal noise and demagnetization energy is also presented. Finally, we discuss the implementation of digit recognition by the proposed system using a spike time dependent algorithm.

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