Plasma-surface interactions in atmospheric pressure plasmas: In situ measurements of electron heating in materials

2018 ◽  
Vol 124 (4) ◽  
pp. 043301 ◽  
Author(s):  
S. G. Walton ◽  
B. M. Foley ◽  
J. Tomko ◽  
D. R. Boris ◽  
E. D. Gillman ◽  
...  
1991 ◽  
Vol 237 ◽  
Author(s):  
N. Blayo ◽  
B. Drevillon

ABSTRACTThe early stages of the growth of plasma deposited amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si) on glass substrates are investigated by in situ infrared phase modulated ellipsometry (IRPME) in the silicon-hydrogen stretching mode region. μc-Si are prepared by alternating SiH4 and H2 plasmas. New insights on the plasma-surface interactions during the growth of these films are given. During the deposition of the first 20 Å of a-Si:H, the hydrogen is incorporated as SiH2. During the further growth of a-Si:H the SiH2 bonds are located at the film surface inside a very thin hydrogen rich overlayer. During the deposition of the first 10–20 Å of μc-Si, the SiH2 bonds are predominantly removed by the H2 plasma, the material being amorphous. After this selective removal of the SiH2 groups, a transition from amorphous to microcrystalline growm is observed. A systematic hydrogen etching during the further growth of μc-Si is observed.


2012 ◽  
Vol 76 (6) ◽  
pp. 683-686 ◽  
Author(s):  
N. V. Mamedov ◽  
V. A. Kurnaev ◽  
D. V. Ivanov ◽  
D. N. Sinel’nikov

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