scholarly journals Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2−xMn1+xSi Heusler alloy films grown by molecular beam epitaxy

2018 ◽  
Vol 112 (26) ◽  
pp. 262407 ◽  
Author(s):  
Mikihiko Oogane ◽  
Anthony P. McFadden ◽  
Kenji Fukuda ◽  
Masakiyo Tsunoda ◽  
Yasuo Ando ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heusler Alloy ◽  
Molecular Beam ◽  
Anisotropic Magnetoresistance ◽  
Half Metallic ◽  
Alloy Films ◽  
Magnetic Damping

scholarly journals Molecular beam epitaxy growth and magnetic properties of Cr-Co-Ga Heusler alloy films

AIP Advances ◽  
2015 ◽  
Vol 5 (11) ◽  
pp. 117223 ◽  
Author(s):  
Wuwei Feng ◽  
Weihua Wang ◽  
Chenglong Zhao ◽  
Nguyen Van Quang ◽  
Sunglae Cho ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Heusler Alloy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Alloy Films

scholarly journals Molecular-beam epitaxy of the half-Heusler alloy NiMnSb on (In,Ga)As/InP (001)

2003 ◽  
Vol 83 (3) ◽  
pp. 521-523 ◽  
Author(s):  
P. Bach ◽  
A. S. Bader ◽  
C. Rüster ◽  
C. Gould ◽  
C. R. Becker ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heusler Alloy ◽  
Molecular Beam

Materials Design and Molecular-Beam Epitaxy of Half-Metallic Zinc-Blende CrAs and the Heterostructures

2005 ◽  
pp. 293-311
Author(s):  
Hiro Akinaga ◽  
Masaki Mizuguchi ◽  
Kazutaka Nagao ◽  
Yoshio Miura ◽  
Masafumi Shirai
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Materials Design ◽  
Metallic Zinc ◽  
Half Metallic ◽  
Zinc Blende

scholarly journals Current-induced crystallisation in Heusler alloy films for memory potentiation in neuromorphic computation

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
William Frost ◽  
Kelvin Elphick ◽  
Marjan Samiepour ◽  
Atsufumi Hirohata
Keyword(s):  
Heusler Alloy ◽  
Layer Growth ◽  
Layer By Layer ◽  
Half Metallic ◽  
Alloy Films ◽  
Von Neumann ◽  
Alternative Technologies ◽  
Artificial Synapse ◽  
Neumann Type ◽  
Area Product

AbstractThe current information technology has been developed based on von Neumann type computation. In order to sustain the rate of development, it is essential to investigate alternative technologies. In a next-generation computation, an important feature is memory potentiation, which has been overlooked to date. In this study, potentiation functionality is demonstrated in a giant magnetoresistive (GMR) junction consisting of a half-metallic Heusler alloy which can be a candidate of an artificial synapse while still achieving a low resistance-area product for low power consumption. Here the Heusler alloy films are grown on a (110) surface to promote layer-by-layer growth to reduce their crystallisation energy, which is comparable with Joule heating induced by a controlled current introduction. The current-induced crystallisation leads to the reduction in the corresponding resistivity, which acts as memory potentiation for an artificial GMR synaptic junction.

Negative Anisotropic Magnetoresistance in $\gamma'$-Fe$_{4}$N Epitaxial Films on SrTiO$_{3}$(001) Grown by Molecular Beam Epitaxy

2012 ◽  
Vol 51 ◽  
pp. 068001 ◽  
Author(s):  
Keita Ito ◽  
Kazuki Kabara ◽  
Hirokazu Takahashi ◽  
Tatsunori Sanai ◽  
Kaoru Toko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Anisotropic Magnetoresistance

Magnetic properties of full-Heusler alloy Co2Fe1−xMnxAl films grown by molecular-beam epitaxy

2010 ◽  
Vol 97 (23) ◽  
pp. 232506 ◽  
Author(s):  
K. K. Meng ◽  
S. L. Wang ◽  
P. F. Xu ◽  
L. Chen ◽  
W. S. Yan ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Heusler Alloy ◽  
Molecular Beam ◽  
Full Heusler

Thermal transport in molecular beam epitaxy grown Si1 − xGex alloy films with a full spectrum of composition (x = 0–1)

2019 ◽  
Vol 125 (21) ◽  
pp. 215109
Author(s):  
Yu-Sheng Wang ◽  
Zheng-Chang Liu ◽  
Jia-Jia Ye ◽  
Wang-Wei Zhang ◽  
Yu Gu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Transport ◽  
Molecular Beam ◽  
Full Spectrum ◽  
Alloy Films

scholarly journals Tunnel magnetoresistance effect and magnetic damping in half-metallic Heusler alloys

2011 ◽  
Vol 369 (1948) ◽  
pp. 3037-3053 ◽  
Author(s):  
M. Oogane ◽  
S. Mizukami
Keyword(s):  
Spin Polarization ◽  
High Spin ◽  
Heusler Alloy ◽  
Heusler Alloys ◽  
Magnetoresistance Effect ◽  
Half Metallicity ◽  
Half Metallic ◽  
Tunnel Magnetoresistance ◽  
Magnetic Damping ◽  
High Spin Polarization

Some full-Heusler alloys, such as Co 2 MnSi and Co 2 MnGe, are expected to be half-metallic ferromagnetic material, which has complete spin polarization. They are the most promising materials for realizing half-metallicity at room temperature owing to their high Curie temperature. We demonstrate a huge tunnel magnetoresistance effect in a magnetic tunnel junction using a Co 2 MnSi Heusler alloy electrode. This result proves high spin polarization of the Heusler alloy. We also demonstrate a small magnetic damping constant in Co 2 FeAl epitaxial film. The very high spin polarization and small magnetic constant of Heusler alloys will be a great advantage for future spintronic device applications.

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