Publisher’s Note: “Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes” [AIP Advances 8, 015005 (2018)]
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2020 ◽
Vol 11
(21)
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pp. 9371-9378
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Is Auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes?
2008 ◽
Vol 5
(6)
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pp. 2066-2069
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