On the effects of Auger recombination and energetic carrier leakage in GaInAsP/InP light emitting diodes

1988 ◽  
Vol 64 (4) ◽  
pp. 2138-2143 ◽  
Author(s):  
K. D. Chik
Keyword(s):  
Auger Recombination ◽  
Light Emitting Diodes ◽  
Light Emitting

Suppressing Auger Recombination in Cesium Lead Bromide Perovskite Nanocrystal Film for Bright Light-Emitting Diodes

2020 ◽  
Vol 11 (21) ◽  
pp. 9371-9378
Author(s):  
Ji-Song Yao ◽  
Jia-Chen Zhang ◽  
Li Wang ◽  
Kun-Hua Wang ◽  
Xue-Chen Ru ◽  
...  
Keyword(s):  
Auger Recombination ◽  
Light Emitting Diodes ◽  
Bright Light ◽  
Light Emitting ◽  
Lead Bromide

scholarly journals Auger recombination in AlGaN quantum wells for UV light-emitting diodes

2018 ◽  
Vol 113 (7) ◽  
pp. 071107 ◽  
Author(s):  
Felix Nippert ◽  
Mohammad Tollabi Mazraehno ◽  
Matthew J. Davies ◽  
Marc P. Hoffmann ◽  
Hans-Jürgen Lugauer ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Auger Recombination ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting

scholarly journals InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

2014 ◽  
Vol 105 (3) ◽  
pp. 033506 ◽  
Author(s):  
Zi-Hui Zhang ◽  
Wei Liu ◽  
Zhengang Ju ◽  
Swee Tiam Tan ◽  
Yun Ji ◽  
...  
Keyword(s):  
Quantum Well ◽  
Auger Recombination ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting

scholarly journals Controlling the influence of Auger recombination on the performance of quantum-dot light-emitting diodes

2013 ◽  
Vol 4 (1) ◽  
Author(s):  
Wan Ki Bae ◽  
Young-Shin Park ◽  
Jaehoon Lim ◽  
Donggu Lee ◽  
Lazaro A. Padilha ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Auger Recombination ◽  
Light Emitting Diodes ◽  
Light Emitting

scholarly journals Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes

AIP Advances ◽  
2018 ◽  
Vol 8 (1) ◽  
pp. 015005 ◽  
Author(s):  
Muhammad Usman ◽  
Kiran Saba ◽  
Dong-Pyo Han ◽  
Nazeer Muhammad ◽  
Shabieh Farwa ◽  
...  
Keyword(s):  
Auger Recombination ◽  
Light Emitting Diodes ◽  
Polarization Field ◽  
Light Emitting ◽  
Degradation Effect

EFFICIENCY DROOP IN GaInN HIGH-POWER LIGHT-EMITTING DIODES

2011 ◽  
Vol 20 (02) ◽  
pp. 247-265 ◽  
Author(s):  
MARTIN F. SCHUBERT ◽  
JONG KYU KIM
Keyword(s):  
Active Region ◽  
Auger Recombination ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Efficiency Droop ◽  
Hole Injection ◽  
Light Emitting ◽  
High Drive ◽  
Device Structures ◽  
Substantial Effort

GaN -based light-emitting diodes suffer from high-current loss mechanisms that lead to a significant decrease in internal quantum efficiency at high drive currents. This phenomenon, known as "efficiency droop," is a major problem for solid-state lighting applications, in which light-emitting diodes are driven at high currents to deliver large optical powers. Although substantial effort has been invested to uncover the physical origin and mitigate the effects of efficiency droop, there is still a lack of consensus on the dominant mechanism responsible. In this article, we review several mechanisms that have been proposed as explanations of efficiency droop, including junction heating, carrier delocalization, Auger recombination, and electron leakage from the active region. In addition, device structures intended to mitigate the droop-causing mechanism – (i) thick quantum wellsl, (ii) enhanced hole-injection efficiency structures, and (iii) polarization-matched active region – are discussed.

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