scholarly journals Prediction of multiband luminescence due to the gallium vacancy–oxygen defect complex in GaN

2018 ◽  
Vol 112 (26) ◽  
pp. 262104 ◽  
Author(s):  
Zijuan Xie ◽  
Yu Sui ◽  
John Buckeridge ◽  
Alexey A. Sokol ◽  
Thomas W. Keal ◽  
...  
1996 ◽  
Vol 1 (1) ◽  
pp. 209-215
Author(s):  
N. S. Averkiev ◽  
A. A. Gutkin ◽  
S. Yu. Il’inskii ◽  
M. A. Reshchikov ◽  
V. E. Sedov

Nano Energy ◽  
2021 ◽  
pp. 106164
Author(s):  
Xinyue Liang ◽  
Lijin Yan ◽  
Wenpo Li ◽  
Youcun Bai ◽  
Chong Zhu ◽  
...  
Keyword(s):  

RSC Advances ◽  
2021 ◽  
Vol 11 (13) ◽  
pp. 7338-7346
Author(s):  
Sunjae Kim ◽  
Heejoong Ryou ◽  
In Gyu Lee ◽  
Myunghun Shin ◽  
Byung Jin Cho ◽  
...  

The photocatalytic activity is correlated with different parameters affecting the photocatalytic reactions; redox potential (RP), surface area (SA), crystal defect (CD), oxygen defect (OD), and grain-boundary induced defect (GD).


1995 ◽  
Vol 395 ◽  
Author(s):  
X. Zhang ◽  
P. Kung ◽  
D. Walker ◽  
A. Saxler ◽  
M. Razeghi

ABSTRACTWe report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.


iScience ◽  
2021 ◽  
pp. 103039
Author(s):  
Peng Yuan ◽  
Changdong Gu ◽  
Haoran Xu ◽  
Zeyu Ning ◽  
Kefa Cen ◽  
...  

2008 ◽  
Vol 93 (13) ◽  
pp. 132506 ◽  
Author(s):  
En-Zuo Liu ◽  
Yan He ◽  
J. Z. Jiang
Keyword(s):  

2008 ◽  
Vol 93 (20) ◽  
pp. 201903 ◽  
Author(s):  
Hua Y. Geng ◽  
Ying Chen ◽  
Yasunori Kaneta ◽  
Motoyasu Kinoshita

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