Preparation of indium tin oxide contact to n-CdZnTe gamma-ray detector

2018 ◽  
Vol 112 (11) ◽  
pp. 112101 ◽  
Author(s):  
Leqi Li ◽  
Yadong Xu ◽  
Binbin Zhang ◽  
Aoqiu Wang ◽  
Jiangpeng Dong ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Gamma Ray ◽  
Gamma Ray Detector

Radiation-induced Surface Wettability Enhancement of an Indium Tin Oxide and Titanium Oxide Film-Coated Sapphire

2021 ◽  
Author(s):  
Kai Wang ◽  
Hui Liang ◽  
Junya Inoue ◽  
Nejdet Erkan ◽  
Koji Okamoto
Keyword(s):  
Contact Angle ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Gamma Ray ◽  
Nucleate Boiling ◽  
Surface Wettability ◽  
Hydroxyl Groups ◽  
Irradiation Effect ◽  
Surface Contact Angle ◽  
Radiation Induced

Abstract Surface wettability is an important parameter that affects nucleate boiling. Irradiation can alter the surface wettability on metal surfaces without altering the surface macrostructure. However, the wettability characteristics of indium tin oxide (ITO) and TiO2 film-coated sapphire substrates remain unknown. We experimentally investigated the gamma-ray and electron beam irradiation effect on such surfaces. A sapphire plate was exposed to gamma rays and electron beams. Within the irradiation dose, no evident change in the sapphire surface color was found. The surface contact angle decreased after irradiation, and surface wettability was enhanced with more irradiation. After irradiation, the contact angle recovered with time. The related mechanism is possible due to the absorption/desorption of hydroxyl groups. Our results indicate that the irradiation method can be used in ITO film-coated sapphire experiments to study nucleate boiling.

Fan-shaped mid-infrared chiral metamaterials based on indium tin oxide and their circular dichroism

2020 ◽  
Vol 13 (4) ◽  
pp. 722-727
Author(s):  
ZHU Ye-xin ◽  
◽  
◽  
LI Ya-nan ◽  
SHI Wei-jie ◽  
...  
Keyword(s):  
Circular Dichroism ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Mid Infrared ◽  
Chiral Metamaterials ◽  
Circular Dichroïsm

Indium tin oxide/GaAs photodiodes for millimetric-wave applications

1986 ◽  
Vol 22 (23) ◽  
pp. 1266 ◽  
Author(s):  
D.G. Parker ◽  
P.G. Say
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Millimetric Wave

Indium–tin oxide film electrode as catalytic amperometric sensor for hydrogen peroxide

The Analyst ◽  
1995 ◽  
Vol 120 (10) ◽  
pp. 2579-2583 ◽  
Author(s):  
Xiaohua Cai ◽  
Božidar Ogorevc ◽  
Gabrijela Tavčar ◽  
Joseph Wang
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Amperometric Sensor ◽  
Film Electrode

Plasma-assisted deposition of indium tin oxide thin films by sublimation using an anodic vacuum arc discharge

2021 ◽  
pp. 138731
Author(s):  
Bert Scheffel ◽  
Olaf Zywitzki ◽  
Thomas Preußner ◽  
Torsten Kopte
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Arc Discharge ◽  
Vacuum Arc ◽  
Oxide Thin Films

scholarly journals Optoelectronic Properties of Ultrathin Indium Tin Oxide Films: A First-Principle Study

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 30
Author(s):  
Xiaoyan Liu ◽  
Lei Wang ◽  
Yi Tong
Keyword(s):  
Film Thickness ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Density Functional ◽  
Optoelectronic Properties ◽  
Surface Strain ◽  
Strain Effect ◽  
First Principle ◽  
Electrical Resistivities ◽  
Ito Films

First-principle density functional theory simulations have been performed to predict the electronic structures and optoelectronic properties of ultrathin indium tin oxide (ITO) films, having different thicknesses and temperatures. Our results and analysis led us to predict that the physical properties of ultrathin films of ITO have a direct relation with film thickness rather than temperature. Moreover, we found that a thin film of ITO (1 nm thickness) has a larger absorption coefficient, lower reflectivity, and higher transmittance in the visible light region compared with that of 2 and 3 nm thick ITO films. We suggest that this might be due to the stronger surface strain effect in 1 nm thick ITO film. On the other hand, all three thin films produce similar optical spectra. Finally, excellent agreement was found between the calculated electrical resistivities of the ultrathin film of ITO and that of its experimental data. It is concluded that the electrical resistivities reduce along with the increase in film thickness of ITO because of the short strain length and limited bandgap distributions.

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