Temperature dependent electrical properties of pulse laser deposited Au/Ni/β-(AlGa)2O3 Schottky diode

2018 ◽  
Vol 112 (7) ◽  
pp. 072103 ◽  
Author(s):  
Qian Feng ◽  
Zhaoqing Feng ◽  
Zhuangzhuang Hu ◽  
Xiangyu Xing ◽  
Guangshuo Yan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Pulse Laser ◽  
Schottky Diode ◽  
Temperature Dependent

Temperature dependent electrical properties of Al/Cd0.8Zn0.2S/ITO Schottky diode

2015 ◽  
Author(s):  
Parameshwari P. M ◽  
Shrisha B. V ◽  
K Gopalakrishna Naik
Keyword(s):  
Electrical Properties ◽  
Schottky Diode ◽  
Temperature Dependent

scholarly journals Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

AIP Advances ◽  
2018 ◽  
Vol 8 (1) ◽  
pp. 015316 ◽  
Author(s):  
Guangzhong Jian ◽  
Qiming He ◽  
Wenxiang Mu ◽  
Bo Fu ◽  
Hang Dong ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Diode ◽  
Temperature Dependent ◽  
Barrier Distribution

Temperature-dependent electrical properties of (Pt/Au)/Ga-polarity GaN/Si(111) Schottky diode

2012 ◽  
Vol 93 ◽  
pp. 100-104 ◽  
Author(s):  
Koteswara Rao Peta ◽  
Byung-Guon Park ◽  
Sang-Tae Lee ◽  
Moon-Deock Kim ◽  
Jae-Eung Oh
Keyword(s):  
Electrical Properties ◽  
Schottky Diode ◽  
Temperature Dependent

Temperature-Dependent Logic Failure in a GaAs Power Amplifier-Duplexer Module Caused by a Subtle Parasitic Schottky Diode

2014 ◽  
Author(s):  
Rose Emergo ◽  
Steve Brockett ◽  
Pat Hamilton
Keyword(s):  
Power Amplifier ◽  
Schottky Diode ◽  
Production Test ◽  
Temperature Dependent ◽  
Cold Temperatures ◽  
Collector Junction ◽  
Power Mode ◽  
The Difference ◽  
Base Contact ◽  
Single Power

Abstract A single power amplifier-duplexer device was submitted by a customer for analysis. The device was initially considered passing when tested against the production test. However, further electrical testing suggested that the device was stuck in a single power mode for a particular frequency band at cold temperatures only. This paper outlines the systematic isolation of a parasitic Schottky diode formed by a base contactcollector punch through process defect that pulled down the input of a NOR gate leading to the incorrect logic state. Note that this parasitic Schottky diode is parallel to the basecollector junction. It was observed that the logic failure only manifested at colder temperatures because the base contact only slightly diffused into the collector layer. Since the difference in the turn-on voltages between the base-collector junction and the parasitic Schottky diode increases with decreasing temperature, the effect of the parasitic diode is only noticeable at lower temperatures.

scholarly journals A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Mingzhi Dai ◽  
Karim Khan ◽  
Shengnan Zhang ◽  
Kemin Jiang ◽  
Xingye Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Integrated Circuits ◽  
Direct Method ◽  
Temperature Dependent ◽  
Extrinsic Factors ◽  
Gate Pulse ◽  
Dual Gate ◽  
Pulse Spectroscopy ◽  
A Direct Method ◽  
Peak Value

Abstract Sub-gap density of states (DOS) is a key parameter to impact the electrical characteristics of semiconductor materials-based transistors in integrated circuits. Previously, spectroscopy methodologies for DOS extractions include the static methods, temperature dependent spectroscopy and photonic spectroscopy. However, they might involve lots of assumptions, calculations, temperature or optical impacts into the intrinsic distribution of DOS along the bandgap of the materials. A direct and simpler method is developed to extract the DOS distribution from amorphous oxide-based thin-film transistors (TFTs) based on Dual gate pulse spectroscopy (GPS), introducing less extrinsic factors such as temperature and laborious numerical mathematical analysis than conventional methods. From this direct measurement, the sub-gap DOS distribution shows a peak value on the band-gap edge and in the order of 1017–1021/(cm3·eV), which is consistent with the previous results. The results could be described with the model involving both Gaussian and exponential components. This tool is useful as a diagnostics for the electrical properties of oxide materials and this study will benefit their modeling and improvement of the electrical properties and thus broaden their applications.

scholarly journals Temperature Dependence of Electrical Properties and Crystal Structure of 0.29Pb(In1/2Nb1/2)O3–0.44Pb(Mg1/3Nb2/3)O3–0.27PbTiO3Single Crystals

2013 ◽  
Vol 2013 ◽  
pp. 1-5
Author(s):  
Qian Li ◽  
Yun Liu ◽  
Andrew Studer ◽  
Zhenrong Li ◽  
Ray Withers ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Phase Transition ◽  
Electrical Properties ◽  
Dielectric Permittivity ◽  
Neutron Diffraction ◽  
Electrical Measurement ◽  
Temperature Dependent ◽  
Electromechanical Properties ◽  
Polar Order

We characterized the temperature dependent (~25–200°C) electromechanical properties and crystal structure of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3single crystals usingin situelectrical measurement and neutron diffraction techniques. The results show that the poled crystal experiences an addition phase transition around 120°C whereas such a transition is absent in the unpoled crystal. It is also found that the polar order persists above the maximum dielectric permittivity temperature at which the crystal shows a well-defined antiferroelectric behavior. The changes in the electrical properties and underlying crystal structure are discussed in the paper.

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