scholarly journals Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

AIP Advances ◽  
2018 ◽  
Vol 8 (1) ◽  
pp. 015316 ◽  
Author(s):  
Guangzhong Jian ◽  
Qiming He ◽  
Wenxiang Mu ◽  
Bo Fu ◽  
Hang Dong ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Diode ◽  
Temperature Dependent ◽  
Barrier Distribution

Temperature dependent electrical properties of Al/Cd0.8Zn0.2S/ITO Schottky diode

2015 ◽  
Author(s):  
Parameshwari P. M ◽  
Shrisha B. V ◽  
K Gopalakrishna Naik
Keyword(s):  
Electrical Properties ◽  
Schottky Diode ◽  
Temperature Dependent

Temperature-dependent electrical properties of (Pt/Au)/Ga-polarity GaN/Si(111) Schottky diode

2012 ◽  
Vol 93 ◽  
pp. 100-104 ◽  
Author(s):  
Koteswara Rao Peta ◽  
Byung-Guon Park ◽  
Sang-Tae Lee ◽  
Moon-Deock Kim ◽  
Jae-Eung Oh
Keyword(s):  
Electrical Properties ◽  
Schottky Diode ◽  
Temperature Dependent

Temperature dependent electrical properties of pulse laser deposited Au/Ni/β-(AlGa)2O3 Schottky diode

2018 ◽  
Vol 112 (7) ◽  
pp. 072103 ◽  
Author(s):  
Qian Feng ◽  
Zhaoqing Feng ◽  
Zhuangzhuang Hu ◽  
Xiangyu Xing ◽  
Guangshuo Yan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Pulse Laser ◽  
Schottky Diode ◽  
Temperature Dependent

Mbe Growth and Characterization of Lwir HgCdTe

1989 ◽  
Vol 161 ◽  
Author(s):  
M.B. Lee ◽  
J. Decarlo ◽  
D. Dimarzio ◽  
M. Kesselman
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Molecular Beam ◽  
High Mobility ◽  
Optical And Electrical Properties ◽  
Temperature Dependent ◽  
Mbe Growth ◽  
Hall Effect Measurements ◽  
Exafs Study

ABSTRACTWe have grown high-mobility LWIR HgCdTe thin films on CdTe substrates, using molecular beam epitaxy (MBE). The structural, optical, and electrical properties of these epilayers were determined by SEM, DCRC, FTIR, and Hall effect measurements. For films of 10 to 11 µm thick and composition X value ranging from 0.152 to 0.172, the highest mobility observed was 7.5 × 105 cm2 /V-sec, and the FWHMs of the rocking curves were 75 to 110 arcsec. We also have carried out the temperature-dependent EXAFS study of HgCdTe.

Temperature dependent electrical characterization of organic Schottky diode based on thick MgPc films

2017 ◽  
Vol 4 (7) ◽  
pp. 076301 ◽  
Author(s):  
J Singh ◽  
R K Sharma ◽  
U S Sule ◽  
U K Goutam ◽  
Jagannath Gupta ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Temperature Dependent

Temperature-Dependent Logic Failure in a GaAs Power Amplifier-Duplexer Module Caused by a Subtle Parasitic Schottky Diode

2014 ◽  
Author(s):  
Rose Emergo ◽  
Steve Brockett ◽  
Pat Hamilton
Keyword(s):  
Power Amplifier ◽  
Schottky Diode ◽  
Production Test ◽  
Temperature Dependent ◽  
Cold Temperatures ◽  
Collector Junction ◽  
Power Mode ◽  
The Difference ◽  
Base Contact ◽  
Single Power

Abstract A single power amplifier-duplexer device was submitted by a customer for analysis. The device was initially considered passing when tested against the production test. However, further electrical testing suggested that the device was stuck in a single power mode for a particular frequency band at cold temperatures only. This paper outlines the systematic isolation of a parasitic Schottky diode formed by a base contactcollector punch through process defect that pulled down the input of a NOR gate leading to the incorrect logic state. Note that this parasitic Schottky diode is parallel to the basecollector junction. It was observed that the logic failure only manifested at colder temperatures because the base contact only slightly diffused into the collector layer. Since the difference in the turn-on voltages between the base-collector junction and the parasitic Schottky diode increases with decreasing temperature, the effect of the parasitic diode is only noticeable at lower temperatures.

Effect of the structure of cellulose acetate membranes on their permeability, electrical conductivity and rejection

1990 ◽  
Vol 55 (12) ◽  
pp. 2933-2939 ◽  
Author(s):  
Hans-Hartmut Schwarz ◽  
Vlastimil Kůdela ◽  
Klaus Richau
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Cellulose Acetate ◽  
Reverse Osmosis ◽  
Water Flux ◽  
Cellulose Acetate Membrane ◽  
Structure Parameters ◽  
Dc Electrical Conductivity ◽  
Cellulose Acetate Membranes

Ultrafiltration cellulose acetate membrane can be transformed by annealing into reverse osmosis membranes (RO type). Annealing brings about changes in structural properties of the membranes, accompanied by changes in their permeability behaviour and electrical properties. Correlations between structure parameters and electrochemical properties are shown for the temperature range 20-90 °C. Relations have been derived which explain the role played by the dc electrical conductivity in the characterization of rejection ability of the membranes in the reverse osmosis, i.e. rRO = (1 + exp (A-B))-1, where exp A and exp B are statistically significant correlation functions of electrical conductivity and salt permeation, or of electrical conductivity and water flux through the membrane, respectively.

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