Microstructure research for ferroelectric origin in the strained Hf0.5Zr0.5O2 thin film via geometric phase analysis

2018 ◽  
Vol 112 (14) ◽  
pp. 143503 ◽  
Author(s):  
Han Bi ◽  
Qingqing Sun ◽  
Xuebing Zhao ◽  
Wenbin You ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Analysis ◽  
Geometric Phase ◽  
Geometric Phase Analysis

Geometric Phase Analysis of Nano-Scale Strain Fields Around 90° Domains in PbTiO3/SrTiO3 Epitaxial Thin Film

2009 ◽  
Vol 1199 ◽  
Author(s):  
Takanori Kiguchi ◽  
Kenta Aoyagi ◽  
Toyohiko J. Konno ◽  
Satoru Utsugi ◽  
Tomoaki Yamada ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Analysis ◽  
Misfit Dislocation ◽  
Geometric Phase ◽  
Misfit Dislocations ◽  
Epitaxial Thin Film ◽  
Strain Fields ◽  
Geometric Phase Analysis ◽  
Domain Configuration ◽  
A Domains

AbstractThe nano-scale strain fields analysis around 90° domains and misfit dislocations in PbTiO3/SrTiO3 001 epitaxial thin film has been conducted using the geometric phase analysis (GPA) combined with high angle annular dark field - scanning transmission electron microscopy (HAADF-STEM). The films typically possess a-c mixed domain configuration with misfit dislocations. The PbTiO3 layer was formed from the two layer: the upper 200 nm layer shows the typical a- and c- mixed domain configuration where the a-domains are several tens nm in width; the bottom 100 nm layer shows the different domain configuration that the width is several nm. In the latter case, a-domains are terminated within the film and are short in length. On the other hand, the bottom of a-domains does not contact the film/substrate interface. It keeps away from the interface, and there is completely c-domain layer under a-domains. The HAADF-STEM-GPA shows that the strain fields around an a-domain and a misfit dislocation interact each other: the tensile strain field and lattice plane bending fit together. This result indicates that the a-domain originates from the misfit dislocation.

Local Lattice Strain Measurement Using Geometric Phase Analysis of Dark Field Images from Scanning Transmission Electron Microscopy

2011 ◽  
Author(s):  
Jayhoon Chung ◽  
Guoda Lian ◽  
Lew Rabenberg
Keyword(s):  
Phase Analysis ◽  
Geometric Phase ◽  
Process Development ◽  
Local Strain ◽  
Strain Engineering ◽  
Dark Field ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Geometric Phase Analysis ◽  
Scanning Transmission

Abstract Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.

Dislocation core investigation by geometric phase analysis and the dislocation density tensor

2008 ◽  
Vol 41 (3) ◽  
pp. 035408 ◽  
Author(s):  
J Kioseoglou ◽  
G P Dimitrakopulos ◽  
Ph Komninou ◽  
Th Karakostas ◽  
E C Aifantis
Keyword(s):  
Dislocation Density ◽  
Phase Analysis ◽  
Geometric Phase ◽  
Dislocation Core ◽  
Density Tensor ◽  
Geometric Phase Analysis ◽  
Dislocation Density Tensor

scholarly journals Effect of lattice mismatch and shell thickness on strain in core@shell nanocrystals

2020 ◽  
Vol 2 (3) ◽  
pp. 1105-1114 ◽  
Author(s):  
Jocelyn T. L. Gamler ◽  
Alberto Leonardi ◽  
Xiahan Sang ◽  
Kallum M. Koczkur ◽  
Raymond R. Unocic ◽  
...  
Keyword(s):  
Phase Analysis ◽  
Geometric Phase ◽  
Shell Thickness ◽  
Lattice Mismatch ◽  
Lattice Relaxation ◽  
Atomistic Simulations ◽  
Core Shell ◽  
Geometric Phase Analysis ◽  
Bimetallic Nanocrystals

Bimetallic nanocrystals with core@shell architectures are versatile particles. Geometric phase analysis of TEM images and atomistic simulations are coupled to reveal the lattice relaxation as a function of lattice mismatch and shell thickness.

scholarly journals Geometric Phase Analysis of Strain in Naturally Deformed Olivine

2003 ◽  
Vol 9 (S02) ◽  
pp. 952-953
Author(s):  
C.L. Johnson ◽  
M.J. Hÿtch ◽  
P.R. Buseck
Keyword(s):  
Phase Analysis ◽  
Geometric Phase ◽  
Geometric Phase Analysis

Complex Defect in Pyrite and Its Structure Model Derived from Geometric Phase Analysis

2013 ◽  
Vol 19 (5) ◽  
pp. 1303-1307 ◽  
Author(s):  
Péter Németh ◽  
István Dódony ◽  
Mihály Pósfai ◽  
Peter R. Buseck
Keyword(s):  
Phase Analysis ◽  
Geometric Phase ◽  
Atomic Scale ◽  
Structure Model ◽  
Hrtem Image ◽  
New Methods ◽  
Transmission Electron ◽  
Geometric Phase Analysis ◽  
High Resolution Tem ◽  
Line Dislocation

AbstractNew methods for defect analysis can lead to improved interpretation of experimental data and thus better understanding of material properties. Although transmission electron microscopy (TEM) has been used to study defects for many decades, interpretive ambiguities can arise for cases that seem simple or even trivial. Using geometric phase analysis (GPA), an image processing procedure, we show that an apparent simple line defect in pyrite has an entirely different character. It appears to be a b = ½[100] edge dislocation as viewed in a [001] high-resolution TEM (HRTEM) image, but the measured ux and uy displacements are asymmetric, which is inconsistent with a simple line dislocation. Instead, the defect is best understood as a terminating {101} marcasite slab in pyrite. The simulated HRTEM image based on this model reproduces the defect contrast and illustrates the power of GPA analysis for (1) avoiding potential pitfalls of misinterpreting apparently simple defects in HRTEM images, (2) detecting differences in elastic properties at the atomic scale, and (3) providing data for the positions of atom columns, thereby facilitating the construction of structure models for complex defects.

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