scholarly journals High level activen+doping of strained germanium through co-implantation and nanosecond pulsed laser melting

2018 ◽  
Vol 123 (16) ◽  
pp. 165101 ◽  
Author(s):  
David Pastor ◽  
Hemi H. Gandhi ◽  
Corentin P. Monmeyran ◽  
Austin J. Akey ◽  
Ruggero Milazzo ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Laser Melting ◽  
Nanosecond Pulsed Laser ◽  
High Level

Thermal Characterization of Micro/Nanoscale Wires/Tubes Using Pulsed Laser-assisted Thermal Relaxation

2008 ◽  
Vol 1083 ◽  
Author(s):  
Jiaqi Guo ◽  
Xinwei Wang ◽  
David Geohegan ◽  
Gyula Eres ◽  
Cecile Vincent
Keyword(s):  
Thermal Diffusivity ◽  
Thermal Relaxation ◽  
Pulsed Laser ◽  
Reference Value ◽  
Thermal Characterization ◽  
Copper Electrodes ◽  
Nanosecond Pulsed Laser ◽  
Voltage Variation ◽  
The Wire ◽  
High Level

ABSTRACTA novel transient technique is developed to measure the thermal diffusivity of one-dimensional microscale wires. In this technique, the thin wire is suspended over two copper electrodes. Upon fast (nanosecond) pulsed laser irradiation, the wire's temperature will quickly increase to a high level and then decrease gradually. Such temperature decay can be used to determine sample's thermal diffusivity. To probe this temperature evolution, a dc current is fed through the wire to sensor its voltage variation, from which the thermal diffusivity can be extracted. A 25.4-μ;m thin Pt wire is characterized to verify this technique. Sound agreement is obtained between the measured data and reference value. Applying this pulsed laser-assisted thermal relaxation technique, the thermal diffusivity of multi-wall carbon nanotube bundles and microscale carbon fibers is measured. Detailed analysis is conducted to study the effect of the wire embedded in the paste/base on the final measurement result.

scholarly journals Analysis of Picosecond Pulsed Laser Melted Graphite

1986 ◽  
Vol 74 ◽  
Author(s):  
J. Steinbeck ◽  
G. Braunstein ◽  
J. Speck ◽  
M. S. Dresselhaus ◽  
C. Y. Huang ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Laser Melting ◽  
Pulse Laser Radiation ◽  
Liquid Carbon ◽  
Additional Information ◽  
Nanosecond Pulsed Laser ◽  
Graphite Crystallite ◽  
Raman Microprobe ◽  
Melting Experiments

AbstractA Raman microprobe and TEM have been used to analyze the resolidified region of liquid carbon generated by picosecond pulse laser radiation. From the relative intensities of the zone center Raman-allowed mode for graphite at 1582cm−1 and the disorder-induced mode at 1360cm−1 , the average graphite crystallite size in the resolidified region is determined as a function of incident pulse energy density. By comparing with Rutherford backscattering spectra and Raman spectra from nanosecond pulsed laser melting experiments, additional information about the disorder depth in picosecond pulsed laser melted graphite is obtained. Comparisons of TEM micrographs for nanosecond and picosecond pulsed laser melting experiments show that the structure of the laser disordered regions in graphite are similar and exhibit similar behavior with increasing laser pulse fluence. The similarities in the resolidified regions under both irradiation schemes discourages a determination of the properties of liquid carbon after the liquid has resolidified.

Inside process of glass with nanosecond pulsed laser

2008 ◽  
Author(s):  
Takeji Arai ◽  
Noritaka Asano ◽  
Akihiko Minami ◽  
Hideaki Kusano
Keyword(s):  
Pulsed Laser ◽  
Nanosecond Pulsed Laser

scholarly journals The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Ion Implantation ◽  
Diluted Magnetic Semiconductors ◽  
Laser Annealing ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Co Doping ◽  
Diluted Magnetic

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

Removal mechanism of surface cleaning on TA15 titanium alloy using nanosecond pulsed laser

2021 ◽  
Vol 139 ◽  
pp. 106998
Author(s):  
Zhichao Li ◽  
Donghe Zhang ◽  
Xuan Su ◽  
Shirui Yang ◽  
Jie Xu ◽  
...  
Keyword(s):  
Titanium Alloy ◽  
Pulsed Laser ◽  
Surface Cleaning ◽  
Removal Mechanism ◽  
Nanosecond Pulsed Laser ◽  
Ta15 Titanium Alloy
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