Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

2018 ◽  
Vol 123 (2) ◽  
pp. 025707 ◽  
Author(s):  
T. Tawara ◽  
S. Matsunaga ◽  
T. Fujimoto ◽  
M. Ryo ◽  
M. Miyazato ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Concentration Dependence ◽  
Stacking Faults ◽  
Pin Diodes

Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes

2012 ◽  
Vol 717-720 ◽  
pp. 387-390 ◽  
Author(s):  
Robert E. Stahlbush ◽  
Qing Chun Jon Zhang ◽  
Anant K. Agarwal ◽  
Nadeemullah A. Mahadik
Keyword(s):  
Basal Plane ◽  
Forward Bias ◽  
Stacking Faults ◽  
Device Fabrication ◽  
Electrical Behavior ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Electrical Stress ◽  
Half Loop

The effects of Shockley stacking faults (SSFs) that originate from half loop arrays (HLAs) on the forward voltage and reverse leakage were measured in 10 kV 4H-SiC PiN diodes. The presence of HLAs and basal plane dislocations in each diode in a wafer was determined by ultraviolet photoluminescence imaging of the wafer before device fabrication. The SSFs were expanded by electrical stressing under forward bias of 30 A/cm2, and contracted by annealing at 550 °C. The electrical stress increased both the forward voltage and reverse leakage. Annealing returned the forward voltage and reverse leakage to nearly their original behavior. The details of SSF expansion and contraction from a HLA and the effects on the electrical behavior of the PiN diodes are discussed.

Temperature dependence of forward I -V in SiC pin diodes considering stacking faults

2013 ◽  
Vol 10 (11) ◽  
pp. 1409-1412 ◽  
Author(s):  
K. Ohtsuka ◽  
A. Furukawa ◽  
R. Tanaka ◽  
S. Yamamoto ◽  
S. Nakata
Keyword(s):  
Temperature Dependence ◽  
Stacking Faults ◽  
Pin Diodes

Carrier concentration dependence and impurity effects of microwave response in Bi2Sr2CaCu2O8+y

1996 ◽  
Vol 46 (S2) ◽  
pp. 1119-1120
Author(s):  
N. Katase ◽  
T. Shibauchi ◽  
T. Tamegai ◽  
I. Tsukada ◽  
K. Uchinokura
Keyword(s):  
Carrier Concentration ◽  
Concentration Dependence ◽  
Microwave Response ◽  
Impurity Effects

Electron carrier concentration dependent magnetization in ZnO:Co and ZnO:Mn thin films

2007 ◽  
Vol 1035 ◽  
Author(s):  
Zheng Yang ◽  
Maurizio Biasini ◽  
Leelaprasanna J Mandalapu ◽  
Zheng Zuo ◽  
Ward P Beyermann ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Concentration ◽  
Concentration Dependence ◽  
Long Range ◽  
Room Temperature ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Electron Carrier ◽  
X Ray ◽  
Curie Temperatures

AbstractCo and Mn ions were implanted into n-type ZnO thin films with different electron carrier concentrations. X-ray diffraction measurements show that the ZnO:Co and ZnO:Mn thin films are of high crystallinity. From magnetization measurements, ferromagnetism was observed in both n-type ZnO:Co and n-type ZnO:Mn thin films with Curie temperatures well-above room temperature. Furthermore, the electron carrier concentration dependence of the saturated magnetization was measured in both types of thin films, and our results support an electron-mediated mechanism for ferromagnetism in ZnO:Co, as predicted by theory. However, our measurements seem to contradict theory for ZnO:Mn, which only predicts long-range ferromagnetism for p-type mediated material.

Composition and carrier-concentration dependence of the electronic structure of InyGa1−yAs1−xNx films with nitrogen mole fraction of less than 0.012

2005 ◽  
Vol 98 (9) ◽  
pp. 093714 ◽  
Author(s):  
Youn-Seon Kang ◽  
Lawrence H. Robins ◽  
Anthony G. Birdwell ◽  
Alexander J. Shapiro ◽  
W. Robert Thurber ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Carrier Concentration ◽  
Concentration Dependence ◽  
Mole Fraction
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