Carrier concentration dependence of Curie temperature in CuAlO2 based dilute magnetic semiconductor by first-principles calculations

2006 ◽  
Vol 3 (12) ◽  
pp. 4135-4138 ◽  
Author(s):  
H. Kizaki ◽  
K. Sato ◽  
H. Katayama-Yoshida
Keyword(s):  
Curie Temperature ◽  
Carrier Concentration ◽  
Concentration Dependence ◽  
Dilute Magnetic Semiconductor ◽  
First Principles ◽  
Magnetic Semiconductor ◽  
First Principles Calculations

Bipolar magnetism in a two-dimensional NbS2 semiconductor with high Curie temperature

2018 ◽  
Vol 6 (42) ◽  
pp. 11401-11406 ◽  
Author(s):  
Yingjie Sun ◽  
Zhiwen Zhuo ◽  
Xiaojun Wu
Keyword(s):  
Curie Temperature ◽  
First Principles ◽  
Magnetic Semiconductor ◽  
High Curie Temperature ◽  
Two Dimensional ◽  
First Principles Calculations

First-principles calculations with the screened hybrid HSE06 functional reveal that the 2D NbS2 crystal is a bipolar magnetic semiconductor with high Curie temperature.

Tuning intrinsic ferromagnetic and anisotropic properties of the Janus VSeS monolayer

2020 ◽  
Vol 8 (38) ◽  
pp. 13286-13296
Author(s):  
Mahsa Abdollahi ◽  
Meysam Bagheri Tagani
Keyword(s):  
Magnetic Properties ◽  
Curie Temperature ◽  
First Principles ◽  
2D Materials ◽  
High Curie Temperature ◽  
First Principles Calculations ◽  
Ferromagnetic Properties ◽  
Anisotropic Properties ◽  
Electronic And Magnetic Properties ◽  
New Class

Motivated by the intrinsic ferromagnetic properties and high Curie temperature of V-based Janus dichalcogenide monolayers as a new class of 2D materials, we investigated the structural, electronic and magnetic properties of the Janus VSeS monolayer by first-principles calculations.

The high thermopower of the Zintl compound Sr5Sn2As6 over a wide temperature range: first-principles calculations

2014 ◽  
Vol 2 (36) ◽  
pp. 15159-15167 ◽  
Author(s):  
Dong Bao Luo ◽  
Yuan Xu Wang ◽  
Yu Li Yan ◽  
Gui Yang ◽  
Jue Ming Yang
Keyword(s):  
Carrier Concentration ◽  
Wide Temperature Range ◽  
First Principles ◽  
First Principles Calculations ◽  
Temperature Range

The highest ZT value of n-type Sr5Sn2As6 at 950 K appears at a carrier concentration of 9.4 × 19 e cm−3.

scholarly journals Low-Resistivity p-Type Doping in Wurtzite ZnS Using Codoping Method

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Deng-Feng Li ◽  
Min Luo ◽  
Bo-Lin Li ◽  
Cheng-Bing Wu ◽  
Bo Deng ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
First Principles ◽  
Ionization Energy ◽  
Formation Energy ◽  
First Principles Calculations ◽  
High Carrier Concentration ◽  
Low Resistivity ◽  
High Carrier ◽  
P Type ◽  
Codoping Method

By using first principles calculations, we propose a codoping method of using acceptors and donors simultaneously to realize low-resistivity and high carrier concentration p-type ZnS with wurtzite structure. The ionization energy of singleNScan be lowered by introducing theIIIZn-NS(III = Al, Ga, In) passivation system. Codoping method in ZnS (2N, III) has lower formation energy comparing with single doping of N since III elements act as reactive codopants.

Theoretical Prediction of Curie Temperature in (Zn,Cr)S, (Zn,Cr)Se and (Zn,Cr)Te by First Principles Calculations

2004 ◽  
Vol 43 (No. 11A) ◽  
pp. L1416-L1418 ◽  
Author(s):  
Tetsuya Fukushima ◽  
Kazunori Sato ◽  
Hiroshi Katayama-Yoshida ◽  
P. H. Dederichs
Keyword(s):  
Curie Temperature ◽  
Theoretical Prediction ◽  
First Principles ◽  
First Principles Calculations
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