Theoretical study of potential performance of armchair graphene nanoribbon field effect transistors: Dependence on channel dimensions and contact resistance

2017 ◽  
Vol 122 (23) ◽  
pp. 234304 ◽  
Author(s):  
Ji-Hyun Hur ◽  
Deok-kee Kim
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Theoretical Study ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

Modeling of Drain Current in Armchair Graphene Nanoribbon Field Effect Transistor Using Transfer Matrix Method

2014 ◽  
Vol 896 ◽  
pp. 367-370 ◽  
Author(s):  
Endi Suhendi ◽  
Fatimah A. Noor ◽  
Neny Kurniasih ◽  
Khairurrijal
Keyword(s):  
Transfer Matrix ◽  
Transfer Matrix Method ◽  
Matrix Method ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Graphene Nanoribbon ◽  
Effect Transistor ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

Drain current in an armchair graphene nanoribbon field effect transistor (AGNRFET) has been quantum mechanically modeled. The transfer matrix method (TMM) was employed to obtain the electron transmittance, and the obtained transmittance was then utilized to calculate the drain current by using the Landauer formula. The calculated results showed that the drain current increases with the gate and drain voltages. It was also shown that the threshold voltage for the device is around 0.3 V. In addition, the AGNR width influences the drain current of AGNRFET.

Simulation of Dirac Electron Tunneling Current in Armchair Graphene Nanoribbon Tunnel Field-Effect Transistors Using a Transfer Matrix Method

2015 ◽  
Vol 1112 ◽  
pp. 128-132
Author(s):  
Endi Suhendi ◽  
Rifky Syariati ◽  
Fatimah A. Noor ◽  
Neny Kurniasih ◽  
Khairurrijal
Keyword(s):  
Transfer Matrix ◽  
Transfer Matrix Method ◽  
Matrix Method ◽  
Field Effect ◽  
Electron Tunneling ◽  
Field Effect Transistors ◽  
Tunneling Current ◽  
Dirac Electron ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

We simulate quantum mechanical tunneling current in armchair graphene nanoribbon tunnel field-effect transistors (AGNR-TFETs). The relativistic Dirac equation is used to determine electron wave functions in the AGNRs, while the potential profile is solved by the Poisson equation. We use a transfer matrix method (TMM) to calculate the electron transmittance and the Dirac electron tunneling current in the AGNR-TFETs. The results show that the Dirac electron tunneling current increases with increasing the drain and gate voltages. Moreover, the AGNR width and the thickness of insulator affect the characteristics of the Dirac electron tunneling currents.

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