High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance

2017 ◽  
Vol 111 (13) ◽  
pp. 133502 ◽  
Author(s):  
Seung Kyu Oh ◽  
Moon Uk Cho ◽  
James Dallas ◽  
Taehoon Jang ◽  
Dong Gyu Lee ◽  
...  
Keyword(s):  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Differential Conductance ◽  
Negative Differential Conductance ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

(Invited) High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on 200mm Si Substrates

2015 ◽  
Vol 66 (1) ◽  
pp. 191-199 ◽  
Author(s):  
C.- F. Lo ◽  
O. Laboutin ◽  
C.- K. Kao ◽  
K. O'Connor ◽  
D. Hill ◽  
...  
Keyword(s):  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Si Substrates ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Back-Doping Design in AlGaN/GaN Heterostructure Field-Effect Transistors for High-Power Applications

2001 ◽  
Vol 693 ◽  
Author(s):  
Narihiko Maeda ◽  
Kotaro Tsubaki ◽  
Tadashi Saitoh ◽  
Naoki Kobayashi
Keyword(s):  
Barrier Layer ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Algan Layer ◽  
Barrier Layers ◽  
Algan Barrier ◽  
Heterostructure Field Effect Transistors ◽  
Algan Barrier Layer ◽  
Gan Heterostructure

AbstractA novel doping design has been proposed that yields high two-dimensional electron gas (2DEG) densities in the AlGaN/GaN heterostructure field-effect transistors (HFETs) even when the AlGaN barrier layers are designed to be very thin. In the novel doping design, an asymmetric double-heterostructure is employed, and donor atoms are doped not only in the surface-side AlGaN layer but also in the underlying AlGaN layer. In this structure, electrons are efficiently supplied also from the back-doped AlGaN barrier layer to the GaN channel, with the help of the negative polarization charges at the heterointerface between the GaN channel and the underlying AlGaN barrier layer. High 2DEG densities can thus be obtained. Moreover, relatively high 2DEG mobilities can be obtained for high 2DEG densities, because back-doped donor atoms are sufficiently remote from the position of the 2DEG so that the 2DEG is less subjected to the ionized impurity scattering due to the relevant donor atoms. By using this back-doping design, a very high 2DEG density of 2.8x1013 cm-2 (2DEG mobility is 850 cm2/Vs) has been obtained at 300 K in the Al0.3Ga0.7N/GaN HFET whose barrier layer (Al0.3Ga0.7N) is as thin as 120 Å. Thus, the back-doping design is effective to obtain high 2DEG densities in the HFETs with thin barrier layers, and promising for high-power applications.

20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

2007 ◽  
Vol 46 (No. 24) ◽  
pp. L587-L589 ◽  
Author(s):  
Shinichi Iwakami ◽  
Osamu Machida ◽  
Masataka Yanagihara ◽  
Toshihiro Ehara ◽  
Nobuo Kaneko ◽  
...  
Keyword(s):  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Si Substrate ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure
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