Reduction of thermal conductivity in YxSb2–xTe3 for phase change memory

2017 ◽  
Vol 122 (19) ◽  
pp. 195107 ◽  
Author(s):  
Zhen Li ◽  
Naihua Miao ◽  
Jian Zhou ◽  
Huibin Xu ◽  
Zhimei Sun
Keyword(s):  
Thermal Conductivity ◽  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory

In-Plane Thermal Conduction and Conductivity Anisotropy in Ge2Sb2Te5 Films for Phase Change Memory

2010 ◽  
Author(s):  
Zijian Li ◽  
Jaeho Lee ◽  
John P. Reifenberg ◽  
Mehdi Asheghi ◽  
H.-S. Philip Wong ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Phase Change ◽  
Thermal Conduction ◽  
Phase Change Memory ◽  
Conductivity Measurement ◽  
Face Centered Cubic ◽  
Free Standing ◽  
Out Of Plane ◽  
Change Memory ◽  
Thermal Conductivities

Thermal conduction governs the program/erase speed and power consumption of phase change memory (PCM) devices. This work presents the in-plane thermal conductivity measurement of Ge2Sb2Te5 (GST) films suspended in a microfabricated structure for the amorphous (a-GST), face-centered cubic (f-GST) and hexagonal close packed (h-GST) phases. The unique design of free-standing GST films eliminates the out-of-plane heat loss to the substrate and achieves high sensitivity to lateral heat conduction. The measured in-plane thermal conductivities of GST thin films are 0.18 ± 0.02 Wm−1K−1 for a-GST, 0.49 ± 0.04 Wm−1K−1 for f-GST and 1.03 ± 0.06 Wm−1K−1 for h-GST. The out-of-plane thermal conductivities are measured by using the 3ω technique. We report the in-plane thermal conductivity is 81% of the out-of-plane thermal conductivity for the crystalline phases while no anisotropy is observed for the amorphous phase. The microstructure of the GST thin film is responsible for the direction-dependent thermal conductivities.

High Temperature Thermal Characterization of Ge2Sb2Te5 for Phase Change Memory

2011 ◽  
Author(s):  
Jaeho Lee ◽  
John P. Reifenberg ◽  
Mehdi Asheghi ◽  
Kenneth E. Goodson
Keyword(s):  
Thermal Conductivity ◽  
Phase Change ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Thermal Characterization ◽  
Short Time Scale ◽  
Face Centered Cubic ◽  
Face Centered ◽  
Short Time ◽  
Change Memory

We propose a novel design of Joule heating thermometry to measure thermal properties of Ge2Sb2Te5 (GST) films at temperatures relevant for the switching of phase change memory devices. Vertically stacked micro-fabricated heaters control temperature and measure thermal conductivity of thin films using the 3ω method. The thermal time constant of the experimental structure enables studies of short time scale crystallization and cycling effects for phase change materials. This work reports the thermal conductivity of GST films from the room temperature to above 400 Celsius in amorphous, face-centered cubic, and hexagonal close-packed phases.

Phase-dependent thermal conductivity of Ge1Sb4Te7 and N:Ge1Sb4Te7 for phase change memory applications

2010 ◽  
Vol 107 (3) ◽  
pp. 033518 ◽  
Author(s):  
Sangwoo Shin ◽  
Hyung Keun Kim ◽  
Jiwoon Song ◽  
Doo Jin Choi ◽  
Hyung Hee Cho
Keyword(s):  
Thermal Conductivity ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Change Memory

scholarly journals 8-bit Precision In-Memory Multiplication with Projected Phase-Change Memory

2018 ◽  
Author(s):  
I. Giannopoulos ◽  
A. Sebastian ◽  
M. Le Gallo ◽  
V.P. Jonnalagadda ◽  
M. Sousa ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory

Precision of synaptic weights programmed in phase-change memory devices for deep learning inference

2020 ◽  
Author(s):  
S. R. Nandakumar ◽  
Irem Boybat ◽  
Jin-Ping Han ◽  
Stefano Ambrogio ◽  
Praneet Adusumilli ◽  
...  
Keyword(s):  
Deep Learning ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Change Memory
Sign in / Sign up

Export Citation Format

Share Document