Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction

2016 ◽  
Vol 120 (1) ◽  
pp. 015103 ◽  
Author(s):  
S. W. Fong ◽  
A. Sood ◽  
L. Chen ◽  
N. Kumari ◽  
M. Asheghi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Phase Change ◽  
Phase Change Memory ◽  
Conductivity Measurement ◽  
Power Reduction ◽  
Thermal Conductivity Measurement ◽  
Memory Power ◽  
Amorphous Dielectric ◽  
Change Memory

In-Plane Thermal Conduction and Conductivity Anisotropy in Ge2Sb2Te5 Films for Phase Change Memory

2010 ◽  
Author(s):  
Zijian Li ◽  
Jaeho Lee ◽  
John P. Reifenberg ◽  
Mehdi Asheghi ◽  
H.-S. Philip Wong ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Phase Change ◽  
Thermal Conduction ◽  
Phase Change Memory ◽  
Conductivity Measurement ◽  
Face Centered Cubic ◽  
Free Standing ◽  
Out Of Plane ◽  
Change Memory ◽  
Thermal Conductivities

Thermal conduction governs the program/erase speed and power consumption of phase change memory (PCM) devices. This work presents the in-plane thermal conductivity measurement of Ge2Sb2Te5 (GST) films suspended in a microfabricated structure for the amorphous (a-GST), face-centered cubic (f-GST) and hexagonal close packed (h-GST) phases. The unique design of free-standing GST films eliminates the out-of-plane heat loss to the substrate and achieves high sensitivity to lateral heat conduction. The measured in-plane thermal conductivities of GST thin films are 0.18 ± 0.02 Wm−1K−1 for a-GST, 0.49 ± 0.04 Wm−1K−1 for f-GST and 1.03 ± 0.06 Wm−1K−1 for h-GST. The out-of-plane thermal conductivities are measured by using the 3ω technique. We report the in-plane thermal conductivity is 81% of the out-of-plane thermal conductivity for the crystalline phases while no anisotropy is observed for the amorphous phase. The microstructure of the GST thin film is responsible for the direction-dependent thermal conductivities.

Reduction of thermal conductivity in YxSb2–xTe3 for phase change memory

2017 ◽  
Vol 122 (19) ◽  
pp. 195107 ◽  
Author(s):  
Zhen Li ◽  
Naihua Miao ◽  
Jian Zhou ◽  
Huibin Xu ◽  
Zhimei Sun
Keyword(s):  
Thermal Conductivity ◽  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory

Thermal conductivity measurement of a Sb2Te3 phase change nanowire

2014 ◽  
Vol 104 (26) ◽  
pp. 263103 ◽  
Author(s):  
Abdelhak Saci ◽  
Jean-Luc Battaglia ◽  
Andrzej Kusiak ◽  
Roberto Fallica ◽  
Massimo Longo
Keyword(s):  
Thermal Conductivity ◽  
Phase Change ◽  
Conductivity Measurement ◽  
Thermal Conductivity Measurement

Thermal Conductivity Measurement of a Sb2Te3 Phase Change Nanowire

2014 ◽  
Vol 95 ◽  
pp. 120-125
Author(s):  
Abdelhak Saci ◽  
Jean Luc Battaglia ◽  
Andrzej Kusiak ◽  
Indrayush De ◽  
Roberto Fallica ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Thermal Conductivity ◽  
Contact Resistance ◽  
Phase Change ◽  
Spatial Resolution ◽  
Scanning Probe Microscopy ◽  
Conductivity Measurement ◽  
Thermal Conductivity Measurement ◽  
Scanning Probe ◽  
The Difference

In this work we present the measurements of thermal conductivity of nanowire Sb2Te3 phase change. These measurements are made using a thermal scanning probe microscopy (SThM) operating in regime modulated type 3ω. The spatial resolution of the probe is of the order of 100 nm. The measurement of amplitude and phase are used to identify unknown radius of contact between the nanowire and the sensor parameters, the contact resistance at the interface probe and nanowire and the thermal conductivity of the nanowire. An identification method is used which minimizes the difference between the measured values and those from a simulated model of heat transfer in the materials. This model uses a matched model heat transfer in the probe

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