Effect of germanium doping on the formation kinetics of vacancy-dioxygen complexes in high dose neutron irradiated crystalline silicon

2017 ◽  
Vol 122 (9) ◽  
pp. 095704 ◽  
Author(s):  
Peng Dong ◽  
Xuegong Yu ◽  
Lin Chen ◽  
Xiangyang Ma ◽  
Deren Yang
Keyword(s):  
Crystalline Silicon ◽  
High Dose ◽  
Formation Kinetics ◽  
Kinetics Of

scholarly journals Structure and Formation Kinetics of Millimeter‐Size Single Domain Supercrystals

2021 ◽  
pp. 2101869
Author(s):  
Daniel García‐Lojo ◽  
Evgeny Modin ◽  
Sergio Gómez‐Graña ◽  
Marianne Impéror‐Clerc ◽  
Andrey Chuvilin ◽  
...  
Keyword(s):  
Single Domain ◽  
Formation Kinetics ◽  
Kinetics Of

Kinetics of silicon nitride crystallization in N+-implanted silicon

1989 ◽  
Vol 4 (2) ◽  
pp. 394-398 ◽  
Author(s):  
V. S. Kaushik ◽  
A. K. Datye ◽  
D. L. Kendall ◽  
B. Martinez-Tovar ◽  
D. S. Simons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Wafer Surface ◽  
Amorphous Silicon Nitride ◽  
Silicon Lattice ◽  
Nitrogen Ions ◽  
The Mean ◽  
Nitride Layers ◽  
Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

scholarly journals Role of antigen, CD8, and cytotoxic T lymphocyte (CTL) avidity in high dose antigen induction of apoptosis of effector CTL.

1996 ◽  
Vol 184 (2) ◽  
pp. 485-492 ◽  
Author(s):  
M A Alexander-Miller ◽  
G R Leggatt ◽  
A Sarin ◽  
J A Berzofsky
Keyword(s):  
T Lymphocytes ◽  
Cytotoxic T Lymphocyte ◽  
Target Cells ◽  
High Dose ◽  
High Avidity ◽  
Apoptotic Pathway ◽  
Peptide Antigen ◽  
Kinetics Of ◽  
Selection Of

Experimental data suggest that negative selection of thymocytes can occur as a result of supraoptimal antigenic stimulation. It is unknown, however, whether such mechanisms are at work in mature CD8+ T lymphocytes. Here, we show that CD8+ effector cytotoxic T lymphocytes (CTL) are susceptible to proliferative inhibition by high dose peptide antigen, leading to apoptotic death mediated by TNF-alpha release. Such inhibition is not reflected in the cytolytic potential of the CTL, since concentrations of antigen that are inhibitory for proliferation promote efficient lysis of target cells. Thus, although CTL have committed to the apoptotic pathway, the kinetics of this process are such that CTL function can occur before death of the CTL. The concentration of antigen required for inhibition is a function of the CTL avidity, in that concentrations of antigen capable of completely inhibiting high avidity CTL maximally stimulate low avidity CTL. Importantly, the inhibition can be detected in both activated and resting CTL. Blocking studies demonstrate that the CD8 molecule contributes significantly to the inhibitory signal as the addition of anti-CD8 antibody restores the proliferative response. Thus, our data support the model that mature CD8+ CTL can accommodate an activation signal of restricted intensity, which, if surpassed, results in deletion of that cell.

Understanding the phase formation kinetics of nano-crystalline kesterite deposited on mesoscopic scaffolds via in situ multi-wavelength Raman-monitored annealing

2016 ◽  
Vol 18 (42) ◽  
pp. 29435-29446 ◽  
Author(s):  
Zhuoran Wang ◽  
Samir Elouatik ◽  
George P. Demopoulos
Keyword(s):  
Real Time ◽  
Phase Formation ◽  
Formation Kinetics ◽  
Nano Crystalline ◽  
Multi Wavelength ◽  
Real Time Information ◽  
Kinetics Of ◽  
Time Information ◽  
Annealing Method

The in situ Raman monitored annealing method is developed in this work to provide real-time information on phase formation and crystallinity evolution of kesterite deposited on a TiO2 mesoscopic scaffold.

Oxygen Precipitation Along Individual Ion Tracks During High Dose O+ Implantation into Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
Witold P. Maszara
Keyword(s):  
Silicon Layer ◽  
High Dose ◽  
Regular Array ◽  
Ion Tracks ◽  
Oxygen Precipitation ◽  
Transmission Electron ◽  
Oxygen Gas ◽  
Kinetics Of ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTSilicon wafers with and without protective1Ahermil oxide were implanted with oxygen at 150keV with doses 1.6 – 2.0×1018 cm−2. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) were used to study the top silicon layer remaining above the implanted buried oxide. regular array of spheroidal voids filled with oxygen gas was observed only in the samples that were not protected by the oxide. The voids were aligned into individual columns whose crystallographic orientation with respect to the host silicon lattice matched the direction of the implantation. The origin and the kinetics of their formation are discussed.

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