scholarly journals Formation kinetics of copper-related light-induced degradation in crystalline silicon

2014 ◽  
Vol 116 (23) ◽  
pp. 234901 ◽  
Author(s):  
J. Lindroos ◽  
H. Savin
Keyword(s):  
Crystalline Silicon ◽  
Formation Kinetics ◽  
Kinetics Of

Effect of germanium doping on the formation kinetics of vacancy-dioxygen complexes in high dose neutron irradiated crystalline silicon

2017 ◽  
Vol 122 (9) ◽  
pp. 095704 ◽  
Author(s):  
Peng Dong ◽  
Xuegong Yu ◽  
Lin Chen ◽  
Xiangyang Ma ◽  
Deren Yang
Keyword(s):  
Crystalline Silicon ◽  
High Dose ◽  
Formation Kinetics ◽  
Kinetics Of

scholarly journals Structure and Formation Kinetics of Millimeter‐Size Single Domain Supercrystals

2021 ◽  
pp. 2101869
Author(s):  
Daniel García‐Lojo ◽  
Evgeny Modin ◽  
Sergio Gómez‐Graña ◽  
Marianne Impéror‐Clerc ◽  
Andrey Chuvilin ◽  
...  
Keyword(s):  
Single Domain ◽  
Formation Kinetics ◽  
Kinetics Of

Kinetics of silicon nitride crystallization in N+-implanted silicon

1989 ◽  
Vol 4 (2) ◽  
pp. 394-398 ◽  
Author(s):  
V. S. Kaushik ◽  
A. K. Datye ◽  
D. L. Kendall ◽  
B. Martinez-Tovar ◽  
D. S. Simons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Wafer Surface ◽  
Amorphous Silicon Nitride ◽  
Silicon Lattice ◽  
Nitrogen Ions ◽  
The Mean ◽  
Nitride Layers ◽  
Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

Understanding the phase formation kinetics of nano-crystalline kesterite deposited on mesoscopic scaffolds via in situ multi-wavelength Raman-monitored annealing

2016 ◽  
Vol 18 (42) ◽  
pp. 29435-29446 ◽  
Author(s):  
Zhuoran Wang ◽  
Samir Elouatik ◽  
George P. Demopoulos
Keyword(s):  
Real Time ◽  
Phase Formation ◽  
Formation Kinetics ◽  
Nano Crystalline ◽  
Multi Wavelength ◽  
Real Time Information ◽  
Kinetics Of ◽  
Time Information ◽  
Annealing Method

The in situ Raman monitored annealing method is developed in this work to provide real-time information on phase formation and crystallinity evolution of kesterite deposited on a TiO2 mesoscopic scaffold.

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