Effect of growth-vessel design on the properties of p-terphenyl single crystals grown by vertical Bridgman technique

2017 ◽  
Author(s):  
Qing Ai ◽  
Peifeng Chen ◽  
Yuxiang Feng ◽  
Yebin Xu
Keyword(s):  
Single Crystals ◽  
Bridgman Technique ◽  
Vertical Bridgman ◽  
Growth Vessel

Enhanced crystalline perfection and fluorescence properties of p-terphenyl single crystals grown by the vertical Bridgman technique with a novel modified growth vessel

2017 ◽  
Vol 50 (1) ◽  
pp. 278-282 ◽  
Author(s):  
Qing Ai ◽  
Peifeng Chen ◽  
Yuxiang Feng ◽  
Yebin Xu
Keyword(s):  
Single Crystals ◽  
Fluorescence Properties ◽  
Organic Crystals ◽  
X Ray Diffraction ◽  
Crystalline Perfection ◽  
Bridgman Technique ◽  
X Ray ◽  
Vertical Bridgman ◽  
Growth Vessel ◽  
Double Wall

During the growth process of organic crystals, it is easy to induce thermal defects and impurities when using the conventional Bridgman technique. In the present study, a specially designed double-wall ampoule was used to solve this problem. High-quality p-terphenyl single crystals were successfully grown by the vertical Bridgman method with the improved ampoule. Powder X-ray diffraction analyses were performed to evaluate the crystallinity of the grown single crystals. Fluorescence spectrum studies show an enhancement of fluorescence properties due to the improvement in crystalline perfection.

Studies on acenaphthene (C12H10) single crystals grown by vertical Bridgman technique

2005 ◽  
Vol 285 (4) ◽  
pp. 649-660 ◽  
Author(s):  
R. Ramesh Babu ◽  
N. Balamurugan ◽  
N. Vijayan ◽  
R. Gopalakrishnan ◽  
G. Bhagavannarayana ◽  
...  
Keyword(s):  
Single Crystals ◽  
Bridgman Technique ◽  
Vertical Bridgman

scholarly journals Excitons in PL spectra of Cu(In, Ga)Se-=SUB=-2-=/SUB=- single crystal -=SUP=-*-=/SUP=-

2019 ◽  
Vol 61 (5) ◽  
pp. 1002
Author(s):  
E. Skidchenko ◽  
M.V. Yakushev ◽  
L. Spasevski ◽  
P.R. Edwards ◽  
M.A. Sulimov ◽  
...  
Keyword(s):  
Single Crystals ◽  
Free Exciton ◽  
Excitation Intensity ◽  
Structural Quality ◽  
Near Band Edge ◽  
Bridgman Technique ◽  
Pl Spectra ◽  
Vertical Bridgman ◽  
Ga Content

AbstractA photoluminescence (PL) study of Cu(In,Ga)Se_2 (CIGSe) single crystals, (grown by the vertical Bridgman technique) with the [Ga]/[Ga + In] ratio of 7 and 12% and the [Cu]/[In + Ga] ratio greater than unity, as measured by energy dispersive spectroscopy, is presented. Analysis of the excitation intensity and temperature dependence of the PL spectra suggested the excitonic nature of the observed near-band-edge emissions peaks. Free and bound excitons in CIGSe single crystals with both 7 and 12% Ga content are clearly observed, analyzed and identified. An activation energy of 19 meV is determined for the free exciton in the PL spectra of the sample with 12% Ga. The presence of the excitons demonstrated a high structural quality of the material.

Crystal Growth and Scintillation Properties of CeF3

1994 ◽  
Vol 348 ◽  
Author(s):  
J.L. Allain ◽  
M. Couchaud ◽  
B. Ferrand ◽  
Y. Grange ◽  
B. Utts ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystals ◽  
Radiation Hardness ◽  
Bridgman Technique ◽  
Vertical Bridgman

ABSTRACTLarge single crystals of CeF3, 40 mm in diameter up to 140 mm in length, have been grown using the vertical Bridgman technique. Their optical and scintillation properties and their radiation hardness have been measured.

Influence of Silicon and Boron Doping on the Thermal Conductivity of N-GaAs Single Crystals

2011 ◽  
Vol 671 ◽  
pp. 153-163 ◽  
Author(s):  
M. Prema Rani ◽  
R. Saravanan
Keyword(s):  
Thermal Conductivity ◽  
Single Crystals ◽  
Boron Doping ◽  
The Other ◽  
Czochralski Technique ◽  
Bridgman Technique ◽  
Two Samples ◽  
Vertical Bridgman

Thermal conductivity of three different GaAs crystals, one grown by Liquid Encapsulated Czochralski technique and the other two samples grown by Vertical Bridgman technique have been experimentally measured at temperatures 310 K to 360 K. Two crystals are undoped and semi insulating and one crystal is conductive which is doped with Si and B(Silicon ≈ 4x1015 cm-3 and Boron ≈ 8x 1015cm-3). It has been experimentally observed that doping of silicon and boron gives rise to an increase in thermal conductivity.

Electrical properties of CuInSe2 single crystals grown by the vertical bridgman technique

1983 ◽  
Vol 75 (2) ◽  
pp. K199-K203 ◽  
Author(s):  
H. Neumann ◽  
R. D. Tomlinson ◽  
N. Avgerinos ◽  
E. Nowak
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
Bridgman Technique ◽  
Vertical Bridgman

Growth of the Relaxor Based Ferroelectric Single Crystals Pb(In1/2Nb1/2)O3- Pb(Mg1/3Nb2/3)O3-PbTiO3by Vertical Bridgman Technique

2010 ◽  
Vol 401 (1) ◽  
pp. 173-180 ◽  
Author(s):  
Xian Wang ◽  
Zhuo Xu ◽  
Zhenrong Li ◽  
Fei Li ◽  
Hongbing Chen ◽  
...  
Keyword(s):  
Single Crystals ◽  
Bridgman Technique ◽  
Vertical Bridgman
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