Radiation detector performance of CdTe single crystals grown by the conventional vertical Bridgman technique

1999 ◽  
Author(s):  
Csaba Szeles ◽  
Elgin E. Eissler ◽  
Danny J. Reese ◽  
Scott E. Cameron
Keyword(s):  
Single Crystals ◽  
Radiation Detector ◽  
Bridgman Technique ◽  
Detector Performance ◽  
Vertical Bridgman

Studies on acenaphthene (C12H10) single crystals grown by vertical Bridgman technique

2005 ◽  
Vol 285 (4) ◽  
pp. 649-660 ◽  
Author(s):  
R. Ramesh Babu ◽  
N. Balamurugan ◽  
N. Vijayan ◽  
R. Gopalakrishnan ◽  
G. Bhagavannarayana ◽  
...  
Keyword(s):  
Single Crystals ◽  
Bridgman Technique ◽  
Vertical Bridgman

scholarly journals Characteristics of TlBr single crystals grown using the vertical Bridgman-Stockbarger method for semiconductor-based radiation detector applications

2016 ◽  
Vol 34 (2) ◽  
pp. 297-301 ◽  
Author(s):  
Dong Jin Kim ◽  
Joon-Ho Oh ◽  
Han Soo Kim ◽  
Young Soo Kim ◽  
Manhee Jeong ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Performance ◽  
Radiation Detector ◽  
Radiation Detectors ◽  
Middle Part ◽  
High Quality ◽  
Single Crystalline ◽  
Crystalline Sample ◽  
Vertical Bridgman ◽  
Stockbarger Method

AbstractTlBr single crystals grown using the vertical Bridgman-Stockbarger method were characterized for semiconductor based radiation detector applications. It has been shown that the vertical Bridgman-Stockbarger method is effective to grow high-quality single crystalline ingots of TlBr. The TlBr single crystalline sample, which was located 6 cm from the tip of the ingot, exhibited lower impurity concentration, higher crystalline quality, high enough bandgap (>2.7 eV), and higher resistivity (2.5 × 1011 Ω·cm) which enables using the fabricated samples from the middle part of the TlBr ingot for fabricating high performance semiconductor radiation detectors.

scholarly journals Excitons in PL spectra of Cu(In, Ga)Se-=SUB=-2-=/SUB=- single crystal -=SUP=-*-=/SUP=-

2019 ◽  
Vol 61 (5) ◽  
pp. 1002
Author(s):  
E. Skidchenko ◽  
M.V. Yakushev ◽  
L. Spasevski ◽  
P.R. Edwards ◽  
M.A. Sulimov ◽  
...  
Keyword(s):  
Single Crystals ◽  
Free Exciton ◽  
Excitation Intensity ◽  
Structural Quality ◽  
Near Band Edge ◽  
Bridgman Technique ◽  
Pl Spectra ◽  
Vertical Bridgman ◽  
Ga Content

AbstractA photoluminescence (PL) study of Cu(In,Ga)Se_2 (CIGSe) single crystals, (grown by the vertical Bridgman technique) with the [Ga]/[Ga + In] ratio of 7 and 12% and the [Cu]/[In + Ga] ratio greater than unity, as measured by energy dispersive spectroscopy, is presented. Analysis of the excitation intensity and temperature dependence of the PL spectra suggested the excitonic nature of the observed near-band-edge emissions peaks. Free and bound excitons in CIGSe single crystals with both 7 and 12% Ga content are clearly observed, analyzed and identified. An activation energy of 19 meV is determined for the free exciton in the PL spectra of the sample with 12% Ga. The presence of the excitons demonstrated a high structural quality of the material.

Crystal Growth and Scintillation Properties of CeF3

1994 ◽  
Vol 348 ◽  
Author(s):  
J.L. Allain ◽  
M. Couchaud ◽  
B. Ferrand ◽  
Y. Grange ◽  
B. Utts ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystals ◽  
Radiation Hardness ◽  
Bridgman Technique ◽  
Vertical Bridgman

ABSTRACTLarge single crystals of CeF3, 40 mm in diameter up to 140 mm in length, have been grown using the vertical Bridgman technique. Their optical and scintillation properties and their radiation hardness have been measured.

Influence of Silicon and Boron Doping on the Thermal Conductivity of N-GaAs Single Crystals

2011 ◽  
Vol 671 ◽  
pp. 153-163 ◽  
Author(s):  
M. Prema Rani ◽  
R. Saravanan
Keyword(s):  
Thermal Conductivity ◽  
Single Crystals ◽  
Boron Doping ◽  
The Other ◽  
Czochralski Technique ◽  
Bridgman Technique ◽  
Two Samples ◽  
Vertical Bridgman

Thermal conductivity of three different GaAs crystals, one grown by Liquid Encapsulated Czochralski technique and the other two samples grown by Vertical Bridgman technique have been experimentally measured at temperatures 310 K to 360 K. Two crystals are undoped and semi insulating and one crystal is conductive which is doped with Si and B(Silicon ≈ 4x1015 cm-3 and Boron ≈ 8x 1015cm-3). It has been experimentally observed that doping of silicon and boron gives rise to an increase in thermal conductivity.

Electrical properties of CuInSe2 single crystals grown by the vertical bridgman technique

1983 ◽  
Vol 75 (2) ◽  
pp. K199-K203 ◽  
Author(s):  
H. Neumann ◽  
R. D. Tomlinson ◽  
N. Avgerinos ◽  
E. Nowak
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
Bridgman Technique ◽  
Vertical Bridgman

Growth of the Relaxor Based Ferroelectric Single Crystals Pb(In1/2Nb1/2)O3- Pb(Mg1/3Nb2/3)O3-PbTiO3by Vertical Bridgman Technique

2010 ◽  
Vol 401 (1) ◽  
pp. 173-180 ◽  
Author(s):  
Xian Wang ◽  
Zhuo Xu ◽  
Zhenrong Li ◽  
Fei Li ◽  
Hongbing Chen ◽  
...  
Keyword(s):  
Single Crystals ◽  
Bridgman Technique ◽  
Vertical Bridgman

FLUX BRIDGMAN GROWTH OF FUNCTIONAL OXIDE SINGLE CRYSTALS

2008 ◽  
Vol 01 (03) ◽  
pp. 247-251 ◽  
Author(s):  
JIAYUE XU
Keyword(s):  
Single Crystals ◽  
Growth Process ◽  
Industrial Applications ◽  
Crystal Quality ◽  
Bridgman Growth ◽  
Bridgman Technique ◽  
Effective Technique ◽  
Potential Approach ◽  
Vertical Bridgman ◽  
Oxide Crystals

The vertical Bridgman technique was an effective technique to grow congruent oxide crystals. However, it is difficult to grow incongruent crystals due to the erosion of the fluxes on seeds which was usually put at the bottom of the crucible. Recently, we developed a flux Bridgman growth process for some difficult-grown functional crystals, such as PZNT, ZnO and SLN. The properties of as-grown crystals were characterized and the crystal quality was evaluated. The results show that the flux Bridgman method is a potential approach to grow incongruent oxide crystals for industrial applications.

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