Molybdenum oxide-base phase change resistive switching material

2017 ◽  
Vol 111 (16) ◽  
pp. 163105 ◽  
Author(s):  
Yukiko Ogawa ◽  
Satoshi Shindo ◽  
Yuji Sutou ◽  
Junichi Koike
Keyword(s):  
Phase Change ◽  
Molybdenum Oxide ◽  
Resistive Switching ◽  
Switching Material ◽  
Base Phase

The investigations of characteristics of Sb2Te as a base phase-change material

2017 ◽  
Vol 135 ◽  
pp. 31-36 ◽  
Author(s):  
Guangyu Liu ◽  
Liangcai Wu ◽  
Min Zhu ◽  
Zhitang Song ◽  
Feng Rao ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Change Material ◽  
Base Phase

SET Characteristics of Phase Change Bridge Devices

2008 ◽  
Vol 1072 ◽  
Author(s):  
Daniel Krebs ◽  
Simone Raoux ◽  
Charles T. Rettner ◽  
Robert M. Shelby ◽  
Geoffrey W. Burr ◽  
...  
Keyword(s):  
Phase Change ◽  
Amorphous Phase ◽  
Phase Change Materials ◽  
Random Access ◽  
Stable States ◽  
Threshold Switching ◽  
Non Volatile Memory ◽  
Switching Material ◽  
The Difference ◽  
Memory Applications

ABSTRACTScaling studies have demonstrated that Phase Change Random Access Memory (PCRAM) is one of the most promising candidates for future non-volatile memory applications. The search for suitable phase change materials with optimized properties is therefore actively pursuit. In this paper, SET (crystallization) characteristics of an ultra fast switching material Ge15Sb85 in phase change memory bridge cell devices are presented. It was found that reproducible switching between two stable states with one decade resistance contrast and current pulses as short as 10 ns for SET and RESET (re-amorphization) operation is possible. Particular emphasis was placed on the difference in crystallization kinetics between the as-deposited and melt-quenched amorphous phase. Evidence is given for the existence of an electrical field as the critical parameter for threshold switching rather than a threshold voltage. For Ge15Sb85 a threshold switching field of 9MV/m was measured and it was shown that switching from the melt-quenched amorphous phase to the crystalline phase is about 600 times faster than crystallization from the as-deposited amorphous phase.

scholarly journals A comprehensive investigation of MoO3 based resistive random access memory

RSC Advances ◽  
2020 ◽  
Vol 10 (33) ◽  
pp. 19337-19345 ◽  
Author(s):  
Jameela Fatheema ◽  
Tauseef Shahid ◽  
Mohammad Ali Mohammad ◽  
Amjad Islam ◽  
Fouzia Malik ◽  
...  
Keyword(s):  
Molybdenum Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Comprehensive Investigation ◽  
Bipolar Resistive Switching

The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics.

Theoretical and Experimental Approaches to Select Resistive Switching Material

2015 ◽  
Vol E98.C (1) ◽  
pp. 62-64
Author(s):  
Takeki NINOMIYA ◽  
Zhiqiang WEI ◽  
Shinichi YONEDA ◽  
Kenji SHIRAISHI
Keyword(s):  
Resistive Switching ◽  
Switching Material ◽  
Experimental Approaches

scholarly journals Development of Fe Base Phase Change Materials for High Temperature Using Solid-Solid Transformation

2012 ◽  
Vol 98 (3) ◽  
pp. 104-108 ◽  
Author(s):  
Koki Nishioka ◽  
Naoyuki Suura ◽  
Ko-ichiro Ohno ◽  
Takayuki Maeda ◽  
Masakata Shimizu
Keyword(s):  
High Temperature ◽  
Phase Change ◽  
Phase Change Materials ◽  
Base Phase

scholarly journals Filament formation and erasure in molybdenum oxide during resistive switching cycles

2014 ◽  
Vol 105 (17) ◽  
pp. 173504 ◽  
Author(s):  
Masaki Kudo ◽  
Masashi Arita ◽  
Yuuki Ohno ◽  
Yasuo Takahashi
Keyword(s):  
Molybdenum Oxide ◽  
Resistive Switching ◽  
Filament Formation
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