Researchers model high-speed drop impact on thin films

Scilight ◽  
2017 ◽  
Vol 2017 (8) ◽  
pp. 080005
Author(s):  
Meeri Kim
Keyword(s):  
Thin Films ◽  
High Speed ◽  
Drop Impact

scholarly journals Thixotropy in viscoplastic drop impact on thin films

2021 ◽  
Vol 6 (4) ◽  
Author(s):  
Samya Sen ◽  
Anthony G. Morales ◽  
Randy H. Ewoldt
Keyword(s):  
Thin Films ◽  
Drop Impact

Correlating Drop Impact Simulations With Drop Impact Testing Using High-Speed Camera Measurements

2009 ◽  
Vol 131 (1) ◽  
Author(s):  
J. J. M. Zaal ◽  
W. D. van Driel ◽  
F. J. H. G. Kessels ◽  
G. Q. Zhang
Keyword(s):  
High Speed ◽  
Simulation Models ◽  
3D Models ◽  
Drop Impact ◽  
Impact Testing ◽  
Navigation Systems ◽  
High Speed Camera ◽  
Impact Performance ◽  
Impact Simulations ◽  
Board Level

The increased use of mobile appliances such as mobile phones and navigation systems in today’s society has resulted in an increase in reliability issues related to drop performance. Mobile appliances are dropped several times during their lifespan and the product is required to survive common drop accidents. A widely accepted method to assess the drop reliability of microelectronics on board-level is the drop impact test. This test has been standardized by international councils such as Joint Electron Device Engineering Council and is widely adopted throughout the industry. In this research the solder loading is investigated by combining high-speed camera measurements of several drop impact tests with verified finite element models. These simulation models are developed in order to gain an insight on the loading pattern of solder joints based on interconnect layout, drop conditions, and product specifications prior to physical prototyping. Deflections and frequencies during drop testing are measured using a high-speed camera setup. The high-speed camera experiments are performed on two levels: machine level (rebounds with and without a catcher) and product level (with different levels of energy and different pulse times). Parametric (dynamic and quasistatic) 3D models are developed to predict the drop impact performance. The experimental results are used to verify and enhance the simulation models, e.g., by tuning the damping parameters. As a result, the verified models can be used to determine the location of the critical solder joint and to obtain estimates of the solder lifetime performance.

Motion-Programmed Bar-Coating Method with Controlled Gap for High-Speed Scalable Preparation of Highly Crystalline Organic Semiconductor Thin Films

2019 ◽  
Vol 11 (50) ◽  
pp. 47153-47161 ◽  
Author(s):  
Seon Baek Lee ◽  
Boseok Kang ◽  
Daegun Kim ◽  
Chaneui Park ◽  
Seulwoo Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Organic Semiconductor ◽  
High Speed ◽  
Semiconductor Thin Films ◽  
Coating Method

High-κ Insulator Thin Films and Retention Properties of MFIS Diodes

2011 ◽  
Vol 1345 ◽  
Author(s):  
Yichun Zhou
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
High Speed ◽  
Random Access ◽  
Ferroelectric Thin Film ◽  
Buffer Layers ◽  
Interface Properties ◽  
Si Substrate ◽  
Device Structure ◽  
Low Leakage

ABSTRACTFerroelectric field effect transistor (FFET) is a promising candidate for non-volatile random access memory because of its high speed, single device structure, low power consumption, and nondestructive read-out operation. Currently, however, such ideal devices are commercially not available due to poor interface properties between ferroelectric film and Si substrate, such as leakage current and interdiffusion etc. So we choose YSZ and HfO2 insulating thin films as buffer layer due to they possess relatively high dielectric constant, high thermal stability, low leakage current, and good interface property with Si substrates. Two structural diodes of Pt/BNT/YSZ/Si and Pt/SBT/HfO2/Si were fabricated, and the microstructures, interface properties, C-V, I-V, and retention properties were investigated in detail. Experimental results show that the fabricated diodes exhibit excellent long-term retention properties, which is due to the good interface and the low leakage density, demonstrating that the YSZ and HfO2 buffer layers are playing a critical modulation role between the ferroelectric thin film and Si substrate.

scholarly journals Integration of highly anisotropic multiferroic BaTiO3–Fe nanocomposite thin films on Si towards device applications

2020 ◽  
Vol 2 (9) ◽  
pp. 4172-4178
Author(s):  
Matias Kalaswad ◽  
Bruce Zhang ◽  
Xuejing Wang ◽  
Han Wang ◽  
Xingyao Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
Low Cost ◽  
Low Power Consumption ◽  
Silicon Substrates ◽  
Critical Step ◽  
Nanocomposite Thin Films ◽  
Device Applications

Integration of highly anisotropic multiferroic thin films on silicon substrates is a critical step towards low-cost devices, especially high-speed and low-power consumption memories.

Superlattice-like Ge 8 Sb 92 /Ge thin films for high speed and low power consumption phase change memory application

2014 ◽  
Vol 93 ◽  
pp. 4-7 ◽  
Author(s):  
Yifeng Hu ◽  
Xiaoyi Feng ◽  
Jiwei Zhai ◽  
Ting Wen ◽  
Tianshu Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Low Power Consumption ◽  
Change Memory

scholarly journals Effect of viscosity on motion of splashing crown in high speed drop impact

2017 ◽  
Vol 38 (12) ◽  
pp. 1709-1720
Author(s):  
Shihao Yang ◽  
Yi An ◽  
Qingquan Liu
Keyword(s):  
High Speed ◽  
Drop Impact
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