scholarly journals Demonstration of fast-electron populations in a low-pressure, low-power, magnetized RF plasma source

2018 ◽  
Vol 25 (3) ◽  
pp. 030702 ◽  
Author(s):  
P. Jandovitz ◽  
C. Swanson ◽  
J. Matteucci ◽  
R. Oliver ◽  
J. Pearcy ◽  
...  
Keyword(s):  
Low Power ◽  
Fast Electron ◽  
Plasma Source ◽  
Low Pressure ◽  
Rf Plasma

Cracking of selected hydrocarbon gases in a low-power, low-pressure RF plasma

2011 ◽  
Vol 20 (1) ◽  
pp. 015013
Author(s):  
Charles Q Jiao ◽  
Biswa N Ganguly ◽  
Alan Garscadden
Keyword(s):  
Low Power ◽  
Low Pressure ◽  
Rf Plasma ◽  
Hydrocarbon Gases

High-power, low-pressure, inductively coupled RF plasma source using a FET-based inverter power supply

2014 ◽  
Vol 54 (1S) ◽  
pp. 01AA08
Author(s):  
Shota Komizunai ◽  
Kohei Oikawa ◽  
Yuta Saito ◽  
Kazunori Takahashi ◽  
Akira Ando
Keyword(s):  
High Power ◽  
Power Supply ◽  
Plasma Source ◽  
Low Pressure ◽  
Rf Plasma ◽  
Inductively Coupled ◽  
Inverter Power Supply

scholarly journals RF Plasma source for a Heavy Ion Fusion injector

2005 ◽  
Vol 544 (1-2) ◽  
pp. 436-440 ◽  
Author(s):  
G.A. Westenskow ◽  
D.P. Grote ◽  
E. Halaxa ◽  
J.W. Kwan ◽  
W.L. Waldron
Keyword(s):  
Plasma Source ◽  
Heavy Ion ◽  
Rf Plasma ◽  
Heavy Ion Fusion

scholarly journals Uses of radio emission spectroscopy for non-contact and in situ diagnostics of low pressure radio frequency plasma processing

2021 ◽  
Author(s):  
Rajani K. Vijayaraghavan ◽  
Sean Kelly ◽  
David Coates ◽  
Cezar Gaman ◽  
Niall MacGearailt ◽  
...  
Keyword(s):  
Radio Emission ◽  
Radio Frequency ◽  
Emission Spectroscopy ◽  
Near Field ◽  
Plasma Processing ◽  
Diagnostic Technique ◽  
Primary Source ◽  
Low Pressure ◽  
Chamber Pressure ◽  
Rf Plasma

Abstract We demonstrate that a passive non-contact diagnostic technique, radio emission spectroscopy (RES), provides a sensitive monitor of currents in a low pressure radio frequency (RF) plasma. A near field magnetic loop antenna was used to capture RF emissions from the plasma without perturbing it. The analysis was implemented for a capacitively coupled RF plasma with an RF supply at a frequency of 13.56 MHz. Real-time measurements are captured in scenarios relevant to contemporary challenges faced during semiconductor fabrication (e.g. window coating and wall disturbance). Exploration of the technique for key equipment parameters including applied RF power, chamber pressure, RF bias frequencies and chamber wall cleanliness shows sensitive and repeatable function. In particular, the induced RES signal was found to vary sensitively to pressure changes and we were able to detect pressure and power variations as low as ~2.5 %/mtorr and ~3.5 %/watt, respectively, during the plasma processing during a trial generic plasma process. Finally, we explored the ability of RES to monitor the operation of a multiple frequency low-pressure RF plasma system (f1 = 2 MHz, f2 = 162 MHz) and intermixing products which suggests strongly that the plasma sheaths are the primary source of this non-linear diode mixing effect.

Modeling and diagnostic of an SF/sub 6/ RF plasma at low pressure

2000 ◽  
Vol 28 (1) ◽  
pp. 278-287 ◽  
Author(s):  
C. Riccardi ◽  
R. Barni ◽  
F. de Colle ◽  
M. Fontanesi
Keyword(s):  
Low Pressure ◽  
Rf Plasma

Mechanical and Chemical Properties of CBxNy and CSixNy Thin Films Grown by N*-Plasma Assisted Pulsed Laser Deposition

1999 ◽  
Vol 593 ◽  
Author(s):  
T. Thärigen ◽  
V. Riede ◽  
G. Lippold ◽  
E. Hartmann ◽  
R. Hesse ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Chemical Properties ◽  
Plasma Source ◽  
Laser Deposition ◽  
Lower Amount ◽  
Rf Plasma ◽  
Clear Correlation

ABSTRACTCarbon silicon nitride (CSixNy), and carbon boron nitride (CBxNy) thin films have been grown by pulsed laser deposition (PLD) of various carbon (silicon/boron) (nitride) targets using an additional nitrogen RF plasma source on [100] oriented silicon substrates without additional heating. The CSixNy and CBxNy thin films were amorphous and showed nano hardness up to 23 GPa compared to 14 GPa for silicon and maximum nitrogen content of 30 at%. The maximum nanohardness was achieved for 10% Si and 10% B content in the films. The lower hardness of this films compared to the nanohardness of 30-50 GPa of DLC films indicates a lower amount of covalent carbon-nitrogen bonding in the films. However, in contrast to DLC films, the CSixNy and CBxNy films can be grown to thickness above 3 μm due to lower internal compressive stress. XPS of CSixNy and CBxNy film surfaces shows clear correlation of binding energy and intensity of N ls, C ls, and Si 2p peaks to composition of the PLD-targets and to nitrogen flow through plasma source, indicating soft changes of binding structure due to variation of PLD parameters. The results demonstrate the capability of the plasma assisted PLD process to deposit hard amorphous CSixNy, and CBxNy thin films with adjustable properties.

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