Carbon effect on the survival of vacancies in Czochralski silicon during rapid thermal anneal

2017 ◽  
Vol 122 (4) ◽  
pp. 045705 ◽  
Author(s):  
Jian Zhao ◽  
Peng Dong ◽  
Kang Yuan ◽  
Xiaodong Qiu ◽  
Junwei Zhou ◽  
...  
Keyword(s):  
Rapid Thermal Anneal ◽  
Czochralski Silicon

Rapid-thermal-anneal-based internal gettering for germanium-doped Czochralski silicon

2008 ◽  
Vol 94 (4) ◽  
pp. 905-910 ◽  
Author(s):  
Jiahe Chen ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Rapid Thermal Anneal ◽  
Czochralski Silicon

Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

2014 ◽  
Vol 104 (3) ◽  
pp. 032102 ◽  
Author(s):  
Chao Gao ◽  
Yunhao Lu ◽  
Peng Dong ◽  
Jun Yi ◽  
Xiangyang Ma ◽  
...  
Keyword(s):  
Atomic Level ◽  
Rapid Thermal Anneal ◽  
Czochralski Silicon ◽  
Boron Doped

Microdefects in Heavily Phosphorus-Doped Czochralski Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 201-204 ◽  
Author(s):  
Zhen Hui Wang ◽  
Xiang Yang Ma ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
High Temperatures ◽  
Effective Means ◽  
Rapid Thermal Anneal ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Phosphorus Doped

Oxygen precipitation (OP) and annihilation of voids in heavily phosphorus (P)-doped Czochralski (Cz) silicon have been investigated. It was found that the nucleation anneal at 650°C resulted in much more pronounced OP in the subsequent high temperature anneal than that at 800 or 900 °C. This was due to that SiP precipitates could be formed in heavily P-doped Cz silicon by the 650oC anneal and they acted as the heterogeneous nuclei for OP in the following anneal at high temperatures. The rapid thermal anneal (RTA) at 1200°C was proved to be an effective means to annihilate voids. Moreover, it was found that the significant OP resulting from the two-step anneal of 650°C/8 h + 1000°C/16 h could also cause the substantial annihilation of voids in heavily P-doped Cz silicon. The mechanisms for the annihilation of voids have been tentatively discussed.

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

Electrical Damage Due to Low Energy Plasma Processing of GaAs Structures

1991 ◽  
Vol 223 ◽  
Author(s):  
Hans P. Zappe ◽  
Gudrun Kaufel
Keyword(s):  
Chemical Processes ◽  
Low Energy ◽  
Electrical Behavior ◽  
Rapid Thermal Anneal ◽  
High Temperature Anneal ◽  
Significant Damage ◽  
Low Energies ◽  
Long Time ◽  
Physical Plasma

ABSTRACTThe effect of numerous plasma reative ion etch and physical milling processes on the electrical behavior of GaAs bulk substrates has been investigated by means of electric microwave absorption. It was seen that plasma treatments at quite low energies may significantly affect the electrical quality of the etched semiconductor. Predominantly physical plasma etchants (Ar) were seen to create significant damage at very low energies. Chemical processes (involving Cl or F), while somewhat less pernicious, also gave rise to electrical substrate damage, the effect greater for hydrogenic ambients. Whereas rapid thermal anneal treatments tend to worsen the electrical integrity, some substrates respond positively to long-time high temperature anneal steps.

Nitrogen-doped Czochralski silicon treated in rapid thermal process

2006 ◽  
Vol 134 (2-3) ◽  
pp. 193-201 ◽  
Author(s):  
Deren Yang ◽  
Ming Li ◽  
Can Cui ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material

2005 ◽  
Vol 108-109 ◽  
pp. 11-16
Author(s):  
Timo Müller ◽  
G. Kissinger ◽  
P. Krottenthaler ◽  
C. Seuring ◽  
R. Wahlich ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Treatments ◽  
Low Oxygen ◽  
Zone Formation ◽  
Czochralski Silicon ◽  
Silicon Material ◽  
Free Material ◽  
Precipitation Enhancement

Thermal treatments to enhance precipitation like RTA, ramp anneal and argon anneal were performed on low oxygen 300 mm wafers without vacancy or interstitial agglomerates (“so called” defect-free material). Best results were achieved using high temperature argon anneal leading to a homogenous BMD and denuded zone formation. Furthermore the getter efficiency was positively tested by intentional Ni-contamination. Concepts to overcome the slip danger like improved support geometries and nitrogen codoping were also evaluated and are seen to be beneficial.

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