High-performance low-temperature solution-processable ZnO thin film transistors by microwave-assisted annealing

2011 ◽  
Vol 21 (4) ◽  
pp. 1102-1108 ◽  
Author(s):  
Taehwan Jun ◽  
Keunkyu Song ◽  
Youngmin Jeong ◽  
Kyoohee Woo ◽  
Dongjo Kim ◽  
...  
2013 ◽  
Vol 11 (8) ◽  
pp. 1509-1512 ◽  
Author(s):  
Dedong Han ◽  
Jian Cai ◽  
Wei Wang ◽  
Liangliang Wang ◽  
Yi Wang ◽  
...  

2015 ◽  
Vol 3 (4) ◽  
pp. 854-860 ◽  
Author(s):  
Chang-Ho Choi ◽  
Seung-Yeol Han ◽  
Yu-Wei Su ◽  
Zhen Fang ◽  
Liang-Yu Lin ◽  
...  

In this study, we fabricate amorphous indium oxide thin film transistors (TFTs) on a display glass substrate at various annealing temperatures from 200 °C to 300 °C.


2019 ◽  
Vol 467-468 ◽  
pp. 456-461 ◽  
Author(s):  
J. Meza-Arroyo ◽  
M.G. Syamala Rao ◽  
I. Mejia ◽  
M.A. Quevedo- López ◽  
R. Ramírez-Bon

2012 ◽  
Vol 12 (7) ◽  
pp. 5783-5787 ◽  
Author(s):  
Po-Yu Yang ◽  
Jyh-Liang Wang ◽  
Wei-Chih Tsai ◽  
Yu-Cheng Chang ◽  
Shui-Jinn Wang ◽  
...  

2014 ◽  
Vol 26 (2) ◽  
pp. 1195-1203 ◽  
Author(s):  
Kulbinder K. Banger ◽  
Rebecca L. Peterson ◽  
Kiyotaka Mori ◽  
Yoshihisa Yamashita ◽  
Timothy Leedham ◽  
...  

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