Metal-insulator-metal antennas in the far-infrared range based on highly doped InAsSb

2017 ◽  
Vol 111 (12) ◽  
pp. 121108 ◽  
Author(s):  
F. Omeis ◽  
R. Smaali ◽  
F. Gonzalez-Posada ◽  
L. Cerutti ◽  
T. Taliercio ◽  
...  
Keyword(s):  
Far Infrared ◽  
Infrared Range ◽  
Metal Insulator ◽  
Metal Insulator Metal

scholarly journals Far-infrared bands in plasmonic metal-insulator-metal absorbers optimized for long-wave infrared

MRS Advances ◽  
2019 ◽  
Vol 4 (11-12) ◽  
pp. 667-674 ◽  
Author(s):  
Rachel N. Evans ◽  
Seth R. Calhoun ◽  
Jonathan R. Brescia ◽  
Justin W. Cleary ◽  
Evan M. Smith ◽  
...  
Keyword(s):  
Ground Plane ◽  
Wavelength Region ◽  
Wave Model ◽  
Far Infrared ◽  
Resonance Wavelength ◽  
Surface Structures ◽  
Metal Insulator ◽  
Long Wave ◽  
Metal Insulator Metal ◽  
Long Wave Infrared

ABSTRACTMetal–insulator–metal (MIM) resonant absorbers comprise a conducting ground plane, a dielectric of thickness t, and thin separated metal top-surface structures of dimension l. The fundamental resonance wavelength is predicted by an analytic standing-wave model based on t, l, and the dielectric refractive index spectrum. For the dielectrics SiO2, AlN, and TiO2, values for l of a few microns give fundamental resonances in the 8-12 μm long-wave infrared (LWIR) wavelength region. Agreement with theory is better for t/l exceeding 0.1. Harmonics at shorter wavelengths were already known, but we show that there are additional resonances in the far-infrared 20 - 50 μm wavelength range in MIM structures designed to have LWIR fundamental resonances. These new resonances are consistent with the model if far-IR dispersion features in the index spectrum are considered. LWIR fundamental absorptions are experimentally shown to be optimized for a ratio t/l of 0.1 to 0.3 for SiO2- and AlN-based MIM absorbers, respectively, with TiO2-based MIM optimized at an intermediate ratio.

DC bias dependence of metal-insulator-metal diodes as generators of far-infrared radiation

1996 ◽  
Author(s):  
Hitoshi Odashima ◽  
Keiji Kuroda ◽  
Fusakazu Matsushima ◽  
Shozo Tsunekawa ◽  
Kojiro Takagi
Keyword(s):  
Infrared Radiation ◽  
Far Infrared ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Dc Bias ◽  
Far Infrared Radiation

Characteristics of metal-insulator-metal diodes as generators of far-infrared radiation

1996 ◽  
Vol 32 (2) ◽  
pp. 350-356 ◽  
Author(s):  
H. Odashima ◽  
K. Yamamoto ◽  
F. Matsushima ◽  
S. Tsunekawa ◽  
K. Takagi
Keyword(s):  
Infrared Radiation ◽  
Far Infrared ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Far Infrared Radiation

Modeling, Fabrication, and Electrical Testing of Metal-Insulator-Metal Diode

2011 ◽  
Author(s):  
Terrance O'Regan ◽  
Matthew Chin ◽  
Cheng Tan ◽  
Anthony Birdwell
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Metal

scholarly journals Hyperspectral Molecular Orientation Mapping in Metamaterials

2021 ◽  
Vol 11 (4) ◽  
pp. 1544
Author(s):  
Meguya Ryu ◽  
Yoshiaki Nishijima ◽  
Shinya Morimoto ◽  
Naoki To ◽  
Tomoki Hashizume ◽  
...  
Keyword(s):  
Molecular Orientation ◽  
Field Enhancement ◽  
Chemical Mapping ◽  
Metal Insulator ◽  
Orientation Mapping ◽  
Metal Insulator Metal ◽  
Finger Printing ◽  
Thermal Emitter ◽  
Ir Bands ◽  
Sub Wavelength

The four polarisation method is adopted for measurement of molecular orientation in dielectric nanolayers of metal-insulator-metal (MIM) metamaterials composed of gold nanodisks on polyimide and gold films. Hyperspectral mapping at the chemical finger printing spectral range of 4–20 μμm was carried out for MIM patterns of 1–2.5 μμm period (sub-wavelength). Overlay images taken at 0,π4,π2,3π4 orientation angles and subsequent baseline compensation are shown to be critically important for the interpretation of chemical mapping results and reduction of spurious artefacts. Light field enhancement in the 60-nm-thick polyimide (I in MIM) was responsible for strong absorption at the characteristic polyimide bands. Strong absorbance A at narrow IR bands can be used as a thermal emitter (emittance E=1−R), where R is the reflectance and A=1−R−T, where for optically thick samples the transmittance is T=0.

Nonstoichiometric Nanolayered Ni/NiO/Al2O3/CrAu Metal–Insulator–Metal Infrared Rectenna

2021 ◽  
Vol 4 (3) ◽  
pp. 2470-2475 ◽  
Author(s):  
Ayendra Weerakkody ◽  
Amina Belkadi ◽  
Garret Moddel
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Metal
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