scholarly journals Effect of in-plane strain anisotropy on (011) epitaxial BaTiO3 and PbTiO3 thin films

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105120 ◽  
Author(s):  
Wenhui Ma ◽  
Fei Wang
Keyword(s):  
Thin Films ◽  
Plane Strain ◽  
Strain Anisotropy

B23-O-01Peculiar Domains by Local Out-of- Plane Strain in Chemically Modified Bismuth Ferrite Thin Films

Microscopy ◽  
2015 ◽  
Vol 64 (suppl 1) ◽  
pp. i53.1-i53
Author(s):  
Si-Young Choi ◽  
Sung-Dae Kim ◽  
Jungho Ryu
Keyword(s):  
Thin Films ◽  
Plane Strain ◽  
Bismuth Ferrite ◽  
Chemically Modified ◽  
Out Of Plane ◽  
Ferrite Thin Films

EFFECTS OF IN-PLANE STRAIN ON MAGNETISM IN LaMnO3 THIN FILMS

2002 ◽  
Vol 16 (20n22) ◽  
pp. 3281-3284 ◽  
Author(s):  
K. H. AHN ◽  
A. J. MILLIS
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Plane Strain ◽  
Elastic Energy ◽  
Ground State ◽  
Lattice Mismatch ◽  
Tight Binding ◽  
Antiferromagnetic State ◽  
Magnetic Ground State ◽  
Lattice Coupling

The effects of the in-plane strain on the magnetic properties of LaMnO3 thin films are calculated using an elastic energy expression and a tight binding Hamiltonian with electron-lattice coupling. Tensile uniaxial strain of the order of 2%, which is the order of the magnitude of those induced in thin films by lattice mismatch with substrates, is found to change the magnetic ground state from A-type antiferromagnetic state to purely antiferromagnetic state.

scholarly journals Anisotropic in-plane strain and transport in epitaxial Nd0.2Sr0.8MnO3 thin films

2009 ◽  
Vol 106 (12) ◽  
pp. 123904 ◽  
Author(s):  
K. P. Neupane ◽  
J. J. Neumeier ◽  
J. L. Cohn
Keyword(s):  
Thin Films ◽  
Plane Strain

scholarly journals Microstructure, Stress and Texture in Sputter Deposited TiN Thin Films: Effect of Substrate Bias

2014 ◽  
Vol 996 ◽  
pp. 855-859 ◽  
Author(s):  
Jay Chakraborty ◽  
Tias Maity ◽  
Kishor Kumar ◽  
S. Mukherjee
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Profile Analysis ◽  
Lattice Parameter ◽  
Line Profile Analysis ◽  
Substrate Bias ◽  
X Ray Diffraction ◽  
Strain Anisotropy ◽  
X Ray ◽  
Tin Thin Films

Titanium nitride thin films deposited by reactive dc magnetron sputtering under various substrate bias voltages have been investigated by X-ray diffraction. TiN thin films exhibits lattice parameter anisotropy for all bias voltages. Preferential entrapment of argon atoms in TiN lattice has been identified as the major cause of lattice parameter anisotropy. Bombardment of argon ions during film growth has produced stacking faults on {111} planes of TiN crystal. Stacking fault probability increases with increasing substrate bias voltages. X-ray diffraction line profile analysis indicates strain anisotropy in TiN thin films. Diffraction stress analysis by d-sin2ψ method reveals pronounced curvature in the plot of inter-planar spacing (d) (or corresponding lattice parameter (a)) versus sin2ψ. Direction dependent elastic grain interaction has been considered as possible source of the observed anisotropic line broadening.

Dielectric and Electromechanical Behaviour of Relaxor [(1−x)Pb(Mg1/3Nb2/3)O3 -xPbTiO3] Thin Films

2001 ◽  
Vol 688 ◽  
Author(s):  
N.J. Donnelly ◽  
G. Catalan ◽  
C. Morros ◽  
R.M. Bowman ◽  
J.M. Gregg
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Plane Strain ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Bulk Ceramic ◽  
Atomic Force ◽  
Out Of Plane ◽  
Order Of Magnitude

AbstractThin film capacitor structures of Au / (1−x)Pb(Mg1/3Nb2/3)O3 - xPbTiO3 /(La1/2Sr1/2)CoO3 were fabricated by pulsed laser deposition on single crystal {001} MgO substrates. Films were found to be perovskite dominated and highly {001} oriented. Dielectrically, films displayed relaxorlike features, though maximum permittivity was low compared to single crystal or bulk ceramic (∼1400 at peak @1kHz, for x=0.07, 0.1 & 0.2). A field induced piezoelectric coefficient d33 was measured by piezoresponse atomic force microscopy for specific compositions x =0, × =0.07, and x =0.1 and found to be disappointingly low - indicating poor electric field induced strain. Despite this macroscopic electrostrictive coefficients Q33 were found to be (3.6 ± 0.6) ×10−2C−2m4, (2.6 ± 0.2) ×10−2C−2m4, and (0.9 ± 0.3) ×10−2C−2m4 respectively. Crystallographic electrostrictive coefficients were determined by in-situ x-ray diffraction and found to be (4.9 ± 0.2) ×10−2C−2m4 for PMN-(0.07)PT and (1.9 ± 0.1) ×10−2C−2m4 for PMN-(0.1)PT. Considering that all these Q33 values are of the same order of magnitude as found in single crystal experiments (2.5 – 3.8 ×10−2C−2m4), it is suggested that low out-of-plane strain is entirely a result of reduced polarisability rather than reduced electrostrictive coefficients in thin films relative to bulk ceramic or single crystal. An estimate was also made of the Q13 electrostrictive coefficient for PMN and PMN-(0.07)PT by measuring permittivity as a function of applied in-plane strain. The values obtained were -1.31 ×10−2C−2m4 and -0.46 ×10−2C−2m4 respectively.

Eutectic Bonding for Inducing In-Plane Strain in Gaas and Gaas/Algaas MQW Thin Films

1994 ◽  
Vol 337 ◽  
Author(s):  
Y. Lu ◽  
H. C. Kuo ◽  
C. H. Lin ◽  
H. Shen ◽  
F. Ren ◽  
...  
Keyword(s):  
Thin Films ◽  
Plane Strain ◽  
Annealing Temperature ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Adhesion Layer ◽  
Thermally Induced ◽  
New Class ◽  
Linearly Polarized ◽  
Reflectance Measurements

ABSTRACTWe present a process for creating in-plane anisotropic strain in (100) GaAs and GaAs/AlGaAs multiple quantum well (MQW) thin films. The host substrates used for bonding include (100) GaAs, (100) silicon, and lithium tantalate (LiTaO3) with a special crystalline orientation. A mutilayer metallization consisting of Au-Sn (Au: 80 wt% , Sn: 20 wt%, 0.95μm), Ti (500Å) adhesion layer and Pt (500Å) barrier layer is deposited on the thin films and the host substrates. By choosing a proper annealing temperature (380°C) and thickness of eutectic layer, the thin films and the substrates are bonded together. Photoluminescence measurements do not reveal any thermally induced strain in the thin films bonded to GaAs; however, they show the existence of in-plane biaxial strain in the films bonded on Si. Linearly polarized reflectance measurements reveal an optical anisotropy in the MQW bonded to LiTaO3, which possesses an orientation-dependent thermal expansion. This indicates that the in-plane strain in the thin films is induced by the different thermal expansions between the thin films and the substrates. This process can be used to develop a new class of devices with an artificially induced in-plane strain.

Microstructure and Strain in GaAs/AlGaAs MQW thin Films Bonded to Different Substrates by Eutectic Alloying

1994 ◽  
Vol 356 ◽  
Author(s):  
C. H. Lin ◽  
H. C. Kuo ◽  
Y. Lu ◽  
H. Shen ◽  
J. Pamulapati ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Plane Strain ◽  
Multiple Quantum Well ◽  
Strain Effect ◽  
Multiple Quantum ◽  
New Device ◽  
Device Applications ◽  
Bonding Technique

AbstractResearch of the strain effect on semiconductors and their heterostructures has generated increasing interests due to its important device applications. We have developed a eutectic bonding technique to create in-plane anisotropic strain in GaAs/AlGaAs multiple quantum well (MQW) thin films. MQW thin films grown on (100) GaAs substrates were bonded to (100) GaAs, (100) Si and Y-cut LiNbO3 submounts with a Au/Sn eutectic alloy. The bonding materials consist of Au/Sn multilayer (80 wt% Au and 20 wt% Sn; 0.95μm) with a Cr (500Å) adhesion layer. The bonding process was optimized by carefully choosing the annealing conditions. After bonding, the substrates of the MQWs were removed by wet chemical etching. The in-plane strain was induced in MQW thin film due to the different thermal expansion between the thin film and submount. The strain was characterized using X-ray rocking curve. The microstructures of bonding interfaces and MQW thin films were examined by scanning electron microscope(SEM) and cross-section transmission electron microscope (XTEM). This bonding technique can be used for many new device applications which take the advantage of in-plane strain, as well as for device integration.

Plane strain sliding contact of multilayer magnetic storage thin-films using the finite element method

2009 ◽  
Vol 15 (7) ◽  
pp. 1097-1110 ◽  
Author(s):  
Raja R. Katta ◽  
Emerson Escobar Nunez ◽  
Andreas A. Polycarpou ◽  
Sung-Chang Lee
Keyword(s):  
Thin Films ◽  
Finite Element Method ◽  
Finite Element ◽  
Plane Strain ◽  
Sliding Contact ◽  
Magnetic Storage ◽  
The Finite Element Method ◽  
Element Method
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