scholarly journals Deep donor state of the copper acceptor as a source of green luminescence in ZnO

2017 ◽  
Vol 111 (4) ◽  
pp. 042101 ◽  
Author(s):  
J. L. Lyons ◽  
A. Alkauskas ◽  
A. Janotti ◽  
C. G. Van de Walle
Keyword(s):  
Green Luminescence ◽  
Deep Donor ◽  
Donor State

Deep donor state of vanadium in cubic silicon carbide (3C‐SiC)

1994 ◽  
Vol 65 (14) ◽  
pp. 1811-1813 ◽  
Author(s):  
K. F. Dombrowski ◽  
U. Kaufmann ◽  
M. Kunzer ◽  
K. Maier ◽  
J. Schneider ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Deep Donor ◽  
Donor State ◽  
Cubic Silicon Carbide

CdTe:Cl and CdTeSe:Cl Single Crystals Application for Radiation Detectors

1993 ◽  
Vol 302 ◽  
Author(s):  
B.K. Meyer ◽  
D.M. Hofmann ◽  
W. Stadler ◽  
M. Salk ◽  
C. Eiche ◽  
...  
Keyword(s):  
Deep Level ◽  
Radiation Detector ◽  
Radiation Detectors ◽  
Electrical And Optical Properties ◽  
Shallow Acceptor ◽  
Deep Donor ◽  
Vertical Bridgman ◽  
Hall Effect Measurements ◽  
Resistive Material ◽  
Donor State

ABSTRACTWe report on electrical and optical properties of vertical Bridgman grown Cl-doped CdTe including the ternary compositions Cd0.9Zn0.1Te and CdTe0 9Se0.1 with respect to application as a radiation detector. Based on Hall effect measurements, photoinduced current spectroscopy (PICTS) and photoluminescence we infer that high resistive material with good performance is controlled by deep level defects. The resistivity is calculated as a function of the shallow acceptor concentration (Cl-A-centers) with the conclusion that a deep donor state at mid gap must be present.

Deep donor state of cobalt in silicon

1976 ◽  
Vol 28 (3) ◽  
pp. 142-144 ◽  
Author(s):  
David C. Wong ◽  
Claude M. Penchina
Keyword(s):  
Deep Donor ◽  
Donor State

scholarly journals On the Pinning of the Fermi Level by Germanium A10/+Deep Donor State in GaAs Codoped with Ge and Te

1993 ◽  
Vol 84 (4) ◽  
pp. 807-811
Author(s):  
T. Słupiński ◽  
G. Nowak ◽  
J. Przybytek ◽  
R. Stępniewski
Keyword(s):  
Fermi Level ◽  
Deep Donor ◽  
Donor State

The Theory of Deep Donor State in AlxGa1-xAs

1988 ◽  
Author(s):  
Si-Chen Lee ◽  
J-S Jan
Keyword(s):  
Deep Donor ◽  
Donor State

The Metastability of Deep Donor Defects in Semiconductor Compounds

1997 ◽  
Vol 7 (11) ◽  
pp. 2145-2151 ◽  
Author(s):  
J. C. Bourgoin ◽  
M. Zazoui ◽  
S. Alaya ◽  
T. Neffati
Keyword(s):  
Semiconductor Compounds ◽  
Deep Donor

Intrinsic doping limit and defect-assisted luminescence in Cs4PbBr6

2019 ◽  
Author(s):  
Young-Kwang Jung ◽  
Joaquin Calbo ◽  
Ji-Sang Park ◽  
Lucy D. Wahlley ◽  
Sunghyun Kim ◽  
...  
Keyword(s):  
First Principles ◽  
Room Temperature ◽  
Stokes Shift ◽  
Green Luminescence ◽  
Counter Ions ◽  
Self Consistent ◽  
Deep Ultraviolet ◽  
Halide Perovskite ◽  
Related Compounds ◽  
Level Analysis

Cs<sub>4</sub>PbBr<sub>6 </sub>is a member of the halide perovskite family that is built from isolated (zero-dimensional) PbBr<sub>6</sub><sup>4-</sup> octahedra with Cs<sup>+</sup> counter ions. The material exhibits anomalous optoelectronic properties: optical absorption and weak emission in the deep ultraviolet (310 - 375 nm) with efficient luminescence in the green region (~ 540 nm). Several hypotheses have been proposed to explain the giant Stokes shift including: (i) phase impurities; (ii) self-trapped exciton; (iii) defect emission. We explore, using first-principles theory and self-consistent Fermi level analysis, the unusual defect chemistry and physics of Cs<sub>4</sub>PbBr<sub>6</sub>. We find a heavily compensated system where the room-temperature carrier concentrations (< 10<sup>9</sup> cm<sup>-3</sup>) are more than one million times lower than the defect concentrations. We show that the low-energy Br-on-Cs antisite results in the formation of a polybromide (Br<sub>3</sub>) species that can exist in a range of charge states. We further demonstrate from excited-state calculations that tribromide moieties are photoresponsive and can contribute to the observed green luminescence. Photoactivity of polyhalide molecules is expected to be present in other halide perovskite-related compounds where they can influence light absorption and emission. <br>

Intrinsic doping limit and defect-assisted luminescence in Cs4PbBr6

2019 ◽  
Author(s):  
Young-Kwang Jung ◽  
Joaquin Calbo ◽  
Ji-Sang Park ◽  
Lucy D. Wahlley ◽  
Sunghyun Kim ◽  
...  
Keyword(s):  
First Principles ◽  
Room Temperature ◽  
Stokes Shift ◽  
Green Luminescence ◽  
Counter Ions ◽  
Self Consistent ◽  
Deep Ultraviolet ◽  
Halide Perovskite ◽  
Related Compounds ◽  
Level Analysis

Cs<sub>4</sub>PbBr<sub>6 </sub>is a member of the halide perovskite family that is built from isolated (zero-dimensional) PbBr<sub>6</sub><sup>4-</sup> octahedra with Cs<sup>+</sup> counter ions. The material exhibits anomalous optoelectronic properties: optical absorption and weak emission in the deep ultraviolet (310 - 375 nm) with efficient luminescence in the green region (~ 540 nm). Several hypotheses have been proposed to explain the giant Stokes shift including: (i) phase impurities; (ii) self-trapped exciton; (iii) defect emission. We explore, using first-principles theory and self-consistent Fermi level analysis, the unusual defect chemistry and physics of Cs<sub>4</sub>PbBr<sub>6</sub>. We find a heavily compensated system where the room-temperature carrier concentrations (< 10<sup>9</sup> cm<sup>-3</sup>) are more than one million times lower than the defect concentrations. We show that the low-energy Br-on-Cs antisite results in the formation of a polybromide (Br<sub>3</sub>) species that can exist in a range of charge states. We further demonstrate from excited-state calculations that tribromide moieties are photoresponsive and can contribute to the observed green luminescence. Photoactivity of polyhalide molecules is expected to be present in other halide perovskite-related compounds where they can influence light absorption and emission. <br>

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