The Metastability of Deep Donor Defects in Semiconductor Compounds

1997 ◽  
Vol 7 (11) ◽  
pp. 2145-2151 ◽  
Author(s):  
J. C. Bourgoin ◽  
M. Zazoui ◽  
S. Alaya ◽  
T. Neffati
Keyword(s):  
Semiconductor Compounds ◽  
Deep Donor

scholarly journals Identification by deuterium diffusion of a nitrogen-related deep donor preventing the p-type doping of ZnO

2021 ◽  
Vol 118 (10) ◽  
pp. 102106
Author(s):  
N. Temahuki ◽  
F. Jomard ◽  
A. Lusson ◽  
I. Stenger ◽  
S. Hassani ◽  
...  
Keyword(s):  
Deep Donor ◽  
P Type

Deep Level Related Yellow Luminescence in P-Type GaN Grown by MBE on (0001) Sapphire

1999 ◽  
Vol 595 ◽  
Author(s):  
Giancarlo Salviati ◽  
Nicola Armani ◽  
Carlo Zanotti-Fregonara ◽  
Enos Gombia ◽  
Martin Albrecht ◽  
...  
Keyword(s):  
Volume Fraction ◽  
Deep Level ◽  
Cubic Phase ◽  
Donor Level ◽  
Yellow Luminescence ◽  
Wurtzite Phase ◽  
Shallow Acceptor ◽  
Deep Donor ◽  
P Type ◽  
Deep Donor Level

AbstractYellow luminescence (YL) has been studied in GaN:Mg doped with Mg concentrations ranging from 1019 to 1021 cm−3 by spectral CL (T=5K) and TEM and explained by suggesting that a different mechanism could be responsible for the YL in p-type GaN with respect to that acting in n-type GaN.Transitions at 2.2, 2.8, 3.27, 3.21, and 3.44 eV were found. In addition to the wurtzite phase, TEM showed a different amount of the cubic phase in the samples. Nano tubes with a density of 3×109 cm−2 were also observed by approaching the layer/substrate interface. Besides this, coherent inclusions were found with a diameter in the nm range and a volume fraction of about 1%.The 2.8 eV transition was correlated to a deep level at 600 meV below the conduction band (CB) due to MgGa-VN complexes. The 3.27 eV emission was ascribed to a shallow acceptor at about 170-190 meV above the valence band (VB) due to MgGa.The 2.2 eV yellow band, not present in low doped samples, increased by increasing the Mg concentration. It was ascribed to a transition between a deep donor level at 0.8-1.1 eV below the CB edge due to NGa and the shallow acceptor due to MgGa. This assumption was checked by studying the role of C in Mg compensation. CL spectra from a sample with high C content showed transitions between a C-related 200 meV shallow donor and a deep donor level at about 0.9- 1.1 eV below the CB due to a NGa-VN complex. In our hypothesis this should induce a decrease of the integrated intensity in both the 2.2 and 2.8 eV bands, as actually shown by CL investigations.

On the Properties of Anisotropic Piezoelectric and Fiber Reinforced Composite Materials

2006 ◽  
Author(s):  
Mohamed Gaith ◽  
Cevdet Akgoz
Keyword(s):  
Composite Materials ◽  
Elastic Fiber ◽  
Physical Property ◽  
Ceramic Materials ◽  
Fiber Reinforced ◽  
Fiber Reinforced Composite ◽  
Reinforced Composite ◽  
Semiconductor Compounds ◽  
Degree Of Anisotropy ◽  
Tensor Basis

A new procedure based on constructing orthonormal tensor basis using the form-invariant expressions which can easily be extended to any tensor of rank n. A new decomposition, which is not in literature, of the stress tensor is presented. An innovational general form and more explicit physical property of the symmetric fourth rank elastic tensors is presented. The new method allows to measure the stiffness and piezoelectricity in the elastic fiber reinforced composite and piezoelectric ceramic materials, respecively, using a proposed norm concept on the crystal scale. This method will allow to investigate the effects of fiber orientaion, number of plies, material properties of matrix and fibers, and degree of anisotropy on the stiffness of the structure. The results are compared with those available in the literature for semiconductor compounds, piezoelectric ceramics and fiber reinforced composite materials.

Ab initio calculation of ZnSiAs2 and CdSiAs2 semiconductor compounds

2011 ◽  
Vol 406 (2) ◽  
pp. 169-176 ◽  
Author(s):  
F. Boukabrine ◽  
F. Chiker ◽  
H. Khachai ◽  
A. Haddou ◽  
N. Baki ◽  
...  
Keyword(s):  
Ab Initio ◽  
Ab Initio Calculation ◽  
Semiconductor Compounds

Thermal Conductivity of Disordered Continuous Ternary Solid Solutions of Semiconductor Compounds PbTe–PbSe–PbS

2021 ◽  
Vol 85 (9) ◽  
pp. 1026-1028
Author(s):  
Yu. P. Zarichnyak ◽  
V. A. Ivanov ◽  
N. V. Pilipenko ◽  
A. E. Ramazanova ◽  
S. N. Emirov
Keyword(s):  
Thermal Conductivity ◽  
Solid Solutions ◽  
Semiconductor Compounds

Deep Donor and Acceptor Levels Induced by High Temperature and long time Annealing in LEC Gallium Arsenide

1991 ◽  
Vol 240 ◽  
Author(s):  
G. Marrakchi ◽  
A. Kalboussi ◽  
G. Guillot ◽  
M. Ben Salem ◽  
H. Maaref ◽  
...  
Keyword(s):  
High Temperature ◽  
Cold Water ◽  
Deep Level ◽  
Electron Trap ◽  
Single Donor ◽  
Long Duration ◽  
Donor And Acceptor ◽  
Deep Donor ◽  
Long Time ◽  
Lec Gaas

ABSTRACTThe effects of high temperature isothermal annealing on the electrical properties of donor and acceptor defects in n-type LEC GaAs are investigated. The annealing experiments are performed under As-rich atmosphere at 1000°C for 1–4 and 16 hours followed by a very quick quenching into cold water of the quartz ampoules containing the samples. The donor and acceptor levels are detected respectively by standard (DLTS) and optical (ODLTS) deep level spectroscopy. DLTS results show the presence of one single donor level present in unannealed and annealed samples at Ec - 0.79eV which is identified as the well known electron trap EL2 Only the sample annealed for 16 hs exhibits the presence of a new electron trap named TAI at Ec - 0.32eV. The appearance of TAI is correlated in one hand with the evolution of EL2 concentration and in the other hand to the effect of long duration (16 hs) of the treatment. For acceptor levels, two hole traps HT1 and HT2 are detected respectively at EV + 0.18 eV and EV+ 0.28 eV. HT1 is detected only in samples annealed for 4 and 16 hs and HT2 is detected in all studied samples. Photoluminescence (PL) measurements show the presence of the 1.44 eV band corresponding to gallium antisite GaAs defect. This band observed in unannealed and annealed samples shows that GaAs remains stable even after thermal annealing at lOOO°C for 16 hs and it is correlated with the presence of HT2.

Deep donor center in Ge1 − x Si x 〈Cu,In,Sb〉 crystals at 1050–1080 K

2010 ◽  
Vol 46 (12) ◽  
pp. 1285-1289 ◽  
Author(s):  
G. Kh. Azhdarov ◽  
Z. M. Zeynalov ◽  
V. K. Kyazimova ◽  
L. A. Huseynli
Keyword(s):  
Donor Center ◽  
Deep Donor

Selective sputtering of single crystals of binary semiconductor compounds

1980 ◽  
Vol 52 (3-4) ◽  
pp. 191-199 ◽  
Author(s):  
S. P. Linnik ◽  
M. A. Buleev ◽  
V. E. Yurasov ◽  
V. I. Zaporozhchenko ◽  
V. S. Chernysh
Keyword(s):  
Single Crystals ◽  
Semiconductor Compounds
Sign in / Sign up

Export Citation Format

Share Document