Blistering mechanisms of atomic-layer-deposited AlN and Al2O3films

Mikael Broas; Hua Jiang; Andreas Graff; Timo Sajavaara; Vesa Vuorinen; Mervi Paulasto-Kröckel

doi:10.1063/1.4994974

Blistering mechanisms of atomic-layer-deposited AlN and Al2O3films

Applied Physics Letters ◽

10.1063/1.4994974 ◽

2017 ◽

Vol 111 (14) ◽

pp. 141606 ◽

Cited By ~ 7

Author(s):

Mikael Broas ◽

Hua Jiang ◽

Andreas Graff ◽

Timo Sajavaara ◽

Vesa Vuorinen ◽

...

Keyword(s):

Atomic Layer ◽

Atomic Layer Deposited Aln

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Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation

Journal of Applied Physics ◽

10.1063/1.4824829 ◽

2013 ◽

Vol 114 (14) ◽

pp. 144509 ◽

Cited By ~ 12

Author(s):

Sen Huang ◽

Ke Wei ◽

Zhikai Tang ◽

Shu Yang ◽

Cheng Liu ◽

...

Keyword(s):

Electron Gas ◽

Atomic Layer ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Transport Behavior ◽

Dimensional Electron Gas ◽

Atomic Layer Deposited Aln

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Investigation of fast and slow traps in atomic layer deposited AlN on 4H-SiC

Optik ◽

10.1016/j.ijleo.2019.05.002 ◽

2019 ◽

Vol 184 ◽

pp. 527-532 ◽

Cited By ~ 2

Author(s):

Hogyoung Kim ◽

Hee Ju Yun ◽

Byung Joon Choi

Keyword(s):

Atomic Layer ◽

Atomic Layer Deposited Aln

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Improved interfacial properties of thermal atomic layer deposited AlN on GaN

Vacuum ◽

10.1016/j.vacuum.2018.10.067 ◽

2019 ◽

Vol 159 ◽

pp. 379-381 ◽

Cited By ~ 6

Author(s):

Hogyoung Kim ◽

Nam Do Kim ◽

Sang Chul An ◽

Hee Ju Yoon ◽

Byung Joon Choi

Keyword(s):

Atomic Layer ◽

Interfacial Properties ◽

Atomic Layer Deposited Aln

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Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices

RSC Advances ◽

10.1039/c8ra07652a ◽

2019 ◽

Vol 9 (2) ◽

pp. 592-598 ◽

Cited By ~ 3

Author(s):

Chin-I. Wang ◽

Teng-Jan Chang ◽

Chun-Yuan Wang ◽

Yu-Tung Yin ◽

Jing-Jong Shyue ◽

...

Keyword(s):

Buffer Layer ◽

High Performance ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Performance ◽

Electrical Characteristics ◽

High K ◽

Aln Buffer ◽

Atomic Layer Deposited Aln

For high-performance Ge-based transistors, one important point of focus is interfacial germanium oxide (GeOx). An AlN buffer layer effectively suppresses the interfacial GeOx, and produces a significant enhancement of the electrical characteristics.

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High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

Applied Physics Letters ◽

10.1063/1.3687199 ◽

2012 ◽

Vol 100 (7) ◽

pp. 071606 ◽

Cited By ~ 15

Author(s):

H. Jussila ◽

P. Mattila ◽

J. Oksanen ◽

A. Perros ◽

J. Riikonen ◽

...

Keyword(s):

Fermi Level ◽

Atomic Layer ◽

Ex Situ ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K ◽

Atomic Layer Deposited Aln

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Effect of Atomic Layer Deposited AlN Layer on Pt/4H-SiC Schottky Diodes

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-018-0058-0 ◽

2018 ◽

Vol 19 (4) ◽

pp. 235-240 ◽

Cited By ~ 2

Author(s):

Hogyoung Kim ◽

Nam Do Kim ◽

Sang Chul An ◽

Hee Ju Yoon ◽

Byung Joon Choi

Keyword(s):

Schottky Diodes ◽

Atomic Layer ◽

Atomic Layer Deposited Aln

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Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN

Nanoscale Research Letters ◽

10.1186/s11671-018-2645-8 ◽

2018 ◽

Vol 13 (1) ◽

Cited By ~ 9

Author(s):

Hogyoung Kim ◽

Hee Ju Yoon ◽

Byung Joon Choi

Keyword(s):

Electrical Properties ◽

Atomic Layer ◽

Thickness Dependence ◽

Atomic Layer Deposited Aln

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Comparison of electrical and interfacial characteristics between atomic-layer-deposited AlN and AlGaN on a GaN substrate

Applied Physics A ◽

10.1007/s00339-020-03645-9 ◽

2020 ◽

Vol 126 (6) ◽

Author(s):

Hogyoung Kim ◽

Hee Ju Yun ◽

Seok Choi ◽

Byung Joon Choi

Keyword(s):

Atomic Layer ◽

Atomic Layer Deposited Aln ◽

Interfacial Characteristics

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GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4816477 ◽

2013 ◽

Vol 31 (5) ◽

pp. 052201 ◽

Cited By ~ 5

Author(s):

Ya-Hsi Hwang ◽

Lu Liu ◽

Camilo Velez ◽

Fan Ren ◽

Brent P. Gila ◽

...

Keyword(s):

Electron Mobility ◽

Gate Dielectric ◽

Atomic Layer ◽

High Electron Mobility Transistor ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Atomic Layer Deposited Aln

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Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors

Nanoscale Research Letters ◽

10.1186/s11671-016-1335-7 ◽

2016 ◽

Vol 11 (1) ◽

Cited By ~ 7

Author(s):

Sheng-Xun Zhao ◽

Xiao-Yong Liu ◽

Lin-Qing Zhang ◽

Hong-Fan Huang ◽

Jin-Shan Shi ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

Passivation Layer ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gan On Si ◽

Atomic Layer Deposited Aln

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