scholarly journals Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

2017 ◽  
Vol 122 (22) ◽  
pp. 223903 ◽  
Author(s):  
B. Thorpe ◽  
K. Kalna ◽  
F. C. Langbein ◽  
S. Schirmer
2022 ◽  
Author(s):  
Zhaocong Huang ◽  
Wenqing Liu ◽  
Jian Liang ◽  
Qingjie Guo ◽  
Ya Zhai ◽  
...  

Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.


2012 ◽  
Vol 2 (2) ◽  
pp. 164-168 ◽  
Author(s):  
Shreyas Basavaraju ◽  
Amit Verma ◽  
Subrahmanya P. Morusupalli ◽  
Andrei K. Buin

2003 ◽  
Vol 83 (22) ◽  
pp. 4577-4579 ◽  
Author(s):  
R. N. Gurzhi ◽  
A. N. Kalinenko ◽  
A. I. Kopeliovich ◽  
A. V. Yanovsky ◽  
E. N. Bogachek ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document