Enhancing the barrier height in oxide Schottky junctions using interface dipoles

2017 ◽  
Vol 111 (9) ◽  
pp. 091602 ◽  
Author(s):  
Takashi Tachikawa ◽  
Harold Y. Hwang ◽  
Yasuyuki Hikita
2014 ◽  
Vol 53 (5S1) ◽  
pp. 05FP03 ◽  
Author(s):  
Shozo Kono ◽  
Hideyuki Kodama ◽  
Kimiyoshi Ichikawa ◽  
Taro Yoshikawa ◽  
Tadashi Abukawa ◽  
...  

1990 ◽  
Vol 26 (21) ◽  
pp. 1750 ◽  
Author(s):  
T. Sugino ◽  
H. Ito ◽  
J. Shirafuji

1992 ◽  
Vol 260 ◽  
Author(s):  
ZS. J. Horváth

ABSTRACTExperimental capacitance-voltage (C-V) characteristics are presented for Au/n-GaAs Schottky contacts. The deviation of the obtained C-V characteristics from the theoretical one including the linear regions of the 1/Ca-V plot may be explained by either the normal or the lognormal lateral distribution of the barrier height. It is concluded that from physical point of view the lognormal lateral distribution of the Schottky barrier height proposed first in this work, is more likely than the normal distribution.


1994 ◽  
Vol 30 (4) ◽  
pp. 359-361
Author(s):  
T. Sugino ◽  
I. Yamamura ◽  
J. Shirafuji

2015 ◽  
Vol 26 (21) ◽  
pp. 215702 ◽  
Author(s):  
D Tomer ◽  
S Rajput ◽  
L J Hudy ◽  
C H Li ◽  
L Li

2019 ◽  
Vol 40 (1) ◽  
pp. 119-122 ◽  
Author(s):  
Weifeng Jin ◽  
Yufei Liu ◽  
Kai Yuan ◽  
Kun Zhang ◽  
Yu Ye ◽  
...  

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