Effect of the ion bombardment on the apparent barrier height in GaAs Schottky junctions

1994 ◽  
Vol 74 (1-2) ◽  
pp. 57-64
Author(s):  
Zs. J. Horváth
Keyword(s):  
Barrier Height ◽  
Ion Bombardment ◽  
Schottky Junctions

Electron spectro-microscopic determination of barrier height and spatial distribution of Au and Ag Schottky junctions on boron-doped diamond (001)

2014 ◽  
Vol 53 (5S1) ◽  
pp. 05FP03 ◽  
Author(s):  
Shozo Kono ◽  
Hideyuki Kodama ◽  
Kimiyoshi Ichikawa ◽  
Taro Yoshikawa ◽  
Tadashi Abukawa ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Barrier Height ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Schottky Junctions

Barrier height enhancement of InP Schottky junctions by treatment with photo-decomposed PH3

1990 ◽  
Vol 26 (21) ◽  
pp. 1750 ◽  
Author(s):  
T. Sugino ◽  
H. Ito ◽  
J. Shirafuji
Keyword(s):  
Barrier Height ◽  
Schottky Junctions

Lognormal Lateral Distribution of Barrier Height in Au/n-GaAs Schottky Junctions?

1992 ◽  
Vol 260 ◽  
Author(s):  
ZS. J. Horváth
Keyword(s):  
Normal Distribution ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Contacts ◽  
Point Of View ◽  
Lateral Distribution ◽  
Physical Point ◽  
Capacitance Voltage ◽  
Schottky Junctions

ABSTRACTExperimental capacitance-voltage (C-V) characteristics are presented for Au/n-GaAs Schottky contacts. The deviation of the obtained C-V characteristics from the theoretical one including the linear regions of the 1/Ca-V plot may be explained by either the normal or the lognormal lateral distribution of the barrier height. It is concluded that from physical point of view the lognormal lateral distribution of the Schottky barrier height proposed first in this work, is more likely than the normal distribution.

Barrier height enhancement of Au Schottky junctions on phosphine-plasma treated n-AlInAs

1994 ◽  
Vol 30 (4) ◽  
pp. 359-361
Author(s):  
T. Sugino ◽  
I. Yamamura ◽  
J. Shirafuji
Keyword(s):  
Barrier Height ◽  
Schottky Junctions

scholarly journals Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

2015 ◽  
Vol 26 (21) ◽  
pp. 215702 ◽  
Author(s):  
D Tomer ◽  
S Rajput ◽  
L J Hudy ◽  
C H Li ◽  
L Li
Keyword(s):  
Barrier Height ◽  
Schottky Junctions

Enhancing the barrier height in oxide Schottky junctions using interface dipoles

2017 ◽  
Vol 111 (9) ◽  
pp. 091602 ◽  
Author(s):  
Takashi Tachikawa ◽  
Harold Y. Hwang ◽  
Yasuyuki Hikita
Keyword(s):  
Barrier Height ◽  
Schottky Junctions
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