scholarly journals The influence of the in-plane lattice constant on the superconducting transition temperature of FeSe0.7Te0.3 thin films

AIP Advances ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 065015 ◽  
Author(s):  
Feifei Yuan ◽  
Kazumasa Iida ◽  
Vadim Grinenko ◽  
Paul Chekhonin ◽  
Aurimas Pukenas ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Lattice Constant ◽  
Superconducting Transition Temperature ◽  
Superconducting Transition ◽  
Plane Lattice

scholarly journals Enhancement of the superconducting transition temperature in FeSe epitaxial thin films by anisotropic compression

2013 ◽  
Vol 103 (17) ◽  
pp. 172602 ◽  
Author(s):  
Fuyuki Nabeshima ◽  
Yoshinori Imai ◽  
Masafumi Hanawa ◽  
Ichiro Tsukada ◽  
Atsutaka Maeda
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Superconducting Transition Temperature ◽  
Epitaxial Thin Films ◽  
Superconducting Transition

Multilayer E-Beam Deposition and Annealing of Yba2Cu3O7-δ Thin Films on Lagao3 Substrates

1989 ◽  
Vol 169 ◽  
Author(s):  
Richard DeVito ◽  
Brian G. Pazol ◽  
John H. Chaffin ◽  
Roger F. Belt ◽  
Robert Uhrin
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Superconducting Transition Temperature ◽  
Depth Profiling ◽  
Superconducting Transition ◽  
Transition Width ◽  
Substrate Diffusion ◽  
Annealing Cycle ◽  
Annealing Study ◽  
Beam Deposition

AbstractThin films of YBa2Cu3O7‐δ have been deposited on samples of LaGaO3 substrates by multilayer E‐beam evaporation. Alternating layers of Cu, Y2O3, and BaF2 were deposited on polished (001) substrates. An annealing study was performed to thoroughly blend the layers and minimize substrate interdiffusion. Films were prepared by annealing in wet oxygen at temperatures between 800 °C and 1000 °C. Four point resistance versus temperature curves were obtained to determine the superconducting transition temperature and transition width. Auger depth profiling was performed as a function of annealing cycle to determine the amount of blending of the layers and quantify any substrate diffusion..

Degradation Mechanism of the Superconducting Transition Temperature in Nb Thin Films

2015 ◽  
Vol 32 (4) ◽  
pp. 047403
Author(s):  
Xiao-Hui Song ◽  
Yi-Rong Jin ◽  
Zhen-Jun Fan ◽  
Zhen-Yu Mi ◽  
Dian-Lin Zhang
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Superconducting Transition Temperature ◽  
Degradation Mechanism ◽  
Superconducting Transition

scholarly journals Superconducting properties of very high quality NbN thin films grown by pulsed laser deposition

2019 ◽  
Vol 70 (7) ◽  
pp. 89-94
Author(s):  
Serhii Volkov ◽  
Maros Gregor ◽  
Tomas Roch ◽  
Leonid Satrapinskyy ◽  
Branislav Grančič ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Superconducting Transition Temperature ◽  
Pulsed Laser ◽  
Domain Size ◽  
Superconducting Transition ◽  
Superconducting Properties ◽  
Si Substrate ◽  
Coherent Domain Size ◽  
Coherent Domain

Abstract In this work, we study the effect of the various substrates on the growth and superconducting properties of NbN thin films grown by using pulsed laser ablation in a N2 + 1%H2 atmosphere on MgO, Al2O3 and Si substrates. Structural and superconducting analyses of the films demonstrate that using MgO and Al2O3 substrates can significantly improve the film properties compared to Si substrate. The X-ray diffraction data indicate that MgO and Al2O3 substrates produce highly oriented superconducting NbN films with large coherent domain size in the out-of plane direction on the order of layer thickness and with a superconducting transition temperature of 13.1 K and 15.2 K, respectively. On the other hand, the NbN film grown on the Si substrate exhibits random polycrystalline orientation. Together with the smallest coherent domain size it leads to the lower critical temperature of 8.3 K. Finally, by using a passivation surface layer we are able to improve superconducting properties of NbN thin film and we observe superconducting transition temperature 16.6 K, the one of the highest value reported so far for 50 nm thick NbN film on sapphire.

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