scholarly journals A facile alternative technique for large-area graphene transfer via sacrificial polymer

AIP Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 125306 ◽  
Author(s):  
Eric Auchter ◽  
Justin Marquez ◽  
Stephen L. Yarbro ◽  
Enkeleda Dervishi
Keyword(s):  
Alternative Technique ◽  
Large Area ◽  
Graphene Transfer

Dry Techniques for Epitaxial Graphene Transfer

2010 ◽  
Vol 1259 ◽  
Author(s):  
Joshua D. Caldwell ◽  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Glenn G. Jernigan ◽  
James C. Culbertson ◽  
...  
Keyword(s):  
Carrier Density ◽  
Epitaxial Graphene ◽  
Large Area ◽  
Wafer Scale ◽  
Thermal Release ◽  
Graphene Films ◽  
Graphene Transfer ◽  
Van Der Pauw

AbstractEpitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit higher carrier mobilities in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. Van der Pauw devices fabricated from C-face EG transferred to SiO2 gave similar mobility values and up to three fold reductions in carrier density in comparison to devices fabricated on as-grown material.

A Novel Method for Large Area Graphene Transfer on the Polymer Optical Fiber

2012 ◽  
Vol 12 (5) ◽  
pp. 3918-3921 ◽  
Author(s):  
Atul Kulkarni ◽  
Hyeongkeun Kim ◽  
Rashid Amin ◽  
Sung Ha Park ◽  
Byung Hee Hong ◽  
...  
Keyword(s):  
Optical Fiber ◽  
Polymer Optical Fiber ◽  
Large Area ◽  
Novel Method ◽  
Graphene Transfer

Large-Area Graphene Transfer through Synthesis of an Interfacial Release Layer between Epitaxial Cu(Ni)(111) and Al2O3(0001) Template

2020 ◽  
Vol MA2020-02 (48) ◽  
pp. 3822-3822
Author(s):  
Hung-Chieh Tsai ◽  
Brecht Marien ◽  
Stefan De Gendt ◽  
Steven Brems
Keyword(s):  
Large Area ◽  
Graphene Transfer

Direct Graphene Transfer and Its Application to Transfer Printing Using Mechanically Controlled, Large Area Graphene/Copper Freestanding Layer

2018 ◽  
Vol 28 (26) ◽  
pp. 1707102 ◽  
Author(s):  
Jeongmin Seo ◽  
Cheogyu Kim ◽  
Boo Soo Ma ◽  
Tae-Ik Lee ◽  
Jae Hoon Bong ◽  
...  
Keyword(s):  
Transfer Printing ◽  
Large Area ◽  
Graphene Transfer

scholarly journals Direct Graphene Transfer and Its Application to Transfer Printing Using Mechanically Controlled, Large Area Graphene/Copper Freestanding Layer

2018 ◽  
Vol 28 (45) ◽  
pp. 1806732
Author(s):  
Jeongmin Seo ◽  
Cheogyu Kim ◽  
Boo Soo Ma ◽  
Tae-Ik Lee ◽  
Jae Hoon Bong ◽  
...  
Keyword(s):  
Transfer Printing ◽  
Large Area ◽  
Graphene Transfer

Design of softened polystyrene for crack- and contamination-free large-area graphene transfer

Nanoscale ◽  
2018 ◽  
Vol 10 (46) ◽  
pp. 21865-21870 ◽  
Author(s):  
Tuqeer Nasir ◽  
Bum Jun Kim ◽  
Kwan-Woo Kim ◽  
Sang Hoon Lee ◽  
Hyung Kyu Lim ◽  
...  
Keyword(s):  
Transfer Process ◽  
Polymeric Carrier ◽  
Large Area ◽  
Cvd Graphene ◽  
Chemical Residue ◽  
Graphene Transfer

The fundamental issues related to the formation of mechanical cracks and the chemical residue during the transfer process of large-area CVD graphene by polymeric carrier-films are addressed in this work.

Facile graphene transfer directly to target substrates with a reusable metal catalyst

Nanoscale ◽  
2015 ◽  
Vol 7 (36) ◽  
pp. 14807-14812 ◽  
Author(s):  
D. L. Mafra ◽  
T. Ming ◽  
J. Kong
Keyword(s):  
Flexible Electronics ◽  
Chemical Etching ◽  
Low Cost ◽  
Metal Catalyst ◽  
Scale Production ◽  
Large Area ◽  
High Quality ◽  
Roll To Roll ◽  
Graphene Transfer ◽  
Industrial Scale Production

We explore a CVD transfer technique that abandons both the intermediate membrane and chemical etching of the metal catalyst. This method is fast, simple and is a necessary route towards roll-to-roll production of large-area CVD graphene sheets at high quality and low cost. Such integration is a step forward to the economical and industrial scale production of graphene and enables technology for flexible electronics and optoelectronics.

Convergent Beam Electron Diffraction

1978 ◽  
Vol 36 (3) ◽  
pp. 304-315
Author(s):  
G. Lehmpfuhl
Keyword(s):  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Crystal Surface ◽  
Diffraction Spot ◽  
Crystal Thickness ◽  
Large Area ◽  
Electron Microscopic ◽  
Additional Information ◽  
Microscopic Investigations

Introduction In electron microscopic investigations of crystalline specimens the direct observation of the electron diffraction pattern gives additional information about the specimen. The quality of this information depends on the quality of the crystals or the crystal area contributing to the diffraction pattern. By selected area diffraction in a conventional electron microscope, specimen areas as small as 1 µ in diameter can be investigated. It is well known that crystal areas of that size which must be thin enough (in the order of 1000 Å) for electron microscopic investigations are normally somewhat distorted by bending, or they are not homogeneous. Furthermore, the crystal surface is not well defined over such a large area. These are facts which cause reduction of information in the diffraction pattern. The intensity of a diffraction spot, for example, depends on the crystal thickness. If the thickness is not uniform over the investigated area, one observes an averaged intensity, so that the intensity distribution in the diffraction pattern cannot be used for an analysis unless additional information is available.

TEM Study of a Tilt Boundary in Hot-Pressed Silicon

1981 ◽  
Vol 39 ◽  
pp. 160-161
Author(s):  
C. B. Carter ◽  
J. Rose ◽  
D. G. Ast
Keyword(s):  
Electron Diffraction ◽  
Imaging Technique ◽  
Interface Structure ◽  
Large Area ◽  
Weak Beam ◽  
Lattice Fringe ◽  
Electron Diffraction Technique ◽  
Tilt Boundaries ◽  
Beam Technique ◽  
Twist Boundaries

The hot-pressing technique which has been successfully used to manufacture twist boundaries in silicon has now been used to form tilt boundaries in this material. In the present study, weak-beam imaging, lattice-fringe imaging and electron diffraction techniques have been combined to identify different features of the interface structure. The weak-beam technique gives an overall picture of the geometry of the boundary and in particular allows steps in the plane of the boundary which are normal to the dislocation lines to be identified. It also allows pockets of amorphous SiO2 remaining in the interface to be recognized. The lattice-fringe imaging technique allows the boundary plane parallel to the dislocation to be identified. Finally the electron diffraction technique allows the periodic structure of the boundary to be evaluated over a large area - this is particularly valuable when the dislocations are closely spaced - and can also provide information on the structural width of the interface.

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