Direct Graphene Transfer and Its Application to Transfer Printing Using Mechanically Controlled, Large Area Graphene/Copper Freestanding Layer

2018 ◽  
Vol 28 (26) ◽  
pp. 1707102 ◽  
Author(s):  
Jeongmin Seo ◽  
Cheogyu Kim ◽  
Boo Soo Ma ◽  
Tae-Ik Lee ◽  
Jae Hoon Bong ◽  
...  
2018 ◽  
Vol 28 (45) ◽  
pp. 1806732
Author(s):  
Jeongmin Seo ◽  
Cheogyu Kim ◽  
Boo Soo Ma ◽  
Tae-Ik Lee ◽  
Jae Hoon Bong ◽  
...  

2010 ◽  
Vol 1259 ◽  
Author(s):  
Joshua D. Caldwell ◽  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Glenn G. Jernigan ◽  
James C. Culbertson ◽  
...  

AbstractEpitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit higher carrier mobilities in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. Van der Pauw devices fabricated from C-face EG transferred to SiO2 gave similar mobility values and up to three fold reductions in carrier density in comparison to devices fabricated on as-grown material.


2020 ◽  
Vol 6 (31) ◽  
pp. eabb6462
Author(s):  
Tae Wan Park ◽  
Myunghwan Byun ◽  
Hyunsung Jung ◽  
Gyu Rac Lee ◽  
Jae Hong Park ◽  
...  

Nanotransfer printing (nTP) has attracted considerable attention due to its good pattern resolution, process simplicity, and cost-effectiveness. However, the development of a large-area nTP process has been hampered by critical reliability issues related to the uniform replication and regular transfer printing of functional nanomaterials. Here, we present a very practical thermally assisted nanotransfer printing (T-nTP) process that can easily produce well-ordered nanostructures on an 8-inch wafer via the use of a heat-rolling press system that provides both uniform pressure and heat. We also demonstrate various complex pattern geometries, such as wave, square, nut, zigzag, and elliptical nanostructures, on diverse substrates via T-nTP. Furthermore, we demonstrate how to obtain a high-density crossbar metal-insulator-metal memristive array using a combined method of T-nTP and directed self-assembly. We expect that the state-of-the-art T-nTP process presented here combined with other emerging patterning techniques will be especially useful for the large-area nanofabrication of various devices.


2020 ◽  
Vol 7 (1) ◽  
Author(s):  
Abhishek Singh Dahiya ◽  
Dhayalan Shakthivel ◽  
Yogeenth Kumaresan ◽  
Ayoub Zumeit ◽  
Adamos Christou ◽  
...  

Abstract The Printed Electronics (PE) is expected to revolutionise the way electronics will be manufactured in the future. Building on the achievements of the traditional printing industry, and the recent advances in flexible electronics and digital technologies, PE may even substitute the conventional silicon-based electronics if the performance of printed devices and circuits can be at par with silicon-based devices. In this regard, the inorganic semiconducting materials-based approaches have opened new avenues as printed nano (e.g. nanowires (NWs), nanoribbons (NRs) etc.), micro (e.g. microwires (MWs)) and chip (e.g. ultra-thin chips (UTCs)) scale structures from these materials have been shown to have performances at par with silicon-based electronics. This paper reviews the developments related to inorganic semiconducting materials based high-performance large area PE, particularly using the two routes i.e. Contact Printing (CP) and Transfer Printing (TP). The detailed survey of these technologies for large area PE onto various unconventional substrates (e.g. plastic, paper etc.) is presented along with some examples of electronic devices and circuit developed with printed NWs, NRs and UTCs. Finally, we discuss the opportunities offered by PE, and the technical challenges and viable solutions for the integration of inorganic functional materials into large areas, 3D layouts for high throughput, and industrial-scale manufacturing using printing technologies.


2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Ayoub Zumeit ◽  
Abhishek Singh Dahiya ◽  
Adamos Christou ◽  
Dhayalan Shakthivel ◽  
Ravinder Dahiya

AbstractTransfer printing of high mobility inorganic nanostructures, using an elastomeric transfer stamp, is a potential route for high-performance printed electronics. Using this method to transfer nanostructures with high yield, uniformity and excellent registration over large area remain a challenge. Herein, we present the ‘direct roll transfer’ as a single-step process, i.e., without using any elastomeric stamp, to print nanoribbons (NRs) on different substrates with excellent registration (retaining spacing, orientation, etc.) and transfer yield (∼95%). The silicon NR based field-effect transistors printed using direct roll transfer consistently show high performance i.e., high on-state current (Ion) >1 mA, high mobility (μeff) >600 cm2/Vs, high on/off ratio (Ion/off) of around 106, and low hysteresis (<0.4 V). The developed versatile and transformative method can also print nanostructures based on other materials such as GaAs and thus could pave the way for direct printing of high-performance electronics on large-area flexible substrates.


AIP Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 125306 ◽  
Author(s):  
Eric Auchter ◽  
Justin Marquez ◽  
Stephen L. Yarbro ◽  
Enkeleda Dervishi

2012 ◽  
Vol 12 (5) ◽  
pp. 3918-3921 ◽  
Author(s):  
Atul Kulkarni ◽  
Hyeongkeun Kim ◽  
Rashid Amin ◽  
Sung Ha Park ◽  
Byung Hee Hong ◽  
...  

2016 ◽  
Vol 11 (1) ◽  
Author(s):  
Robin D. Nagel ◽  
Tobias Haeberle ◽  
Morten Schmidt ◽  
Paolo Lugli ◽  
Giuseppe Scarpa

2016 ◽  
Vol 120 (9) ◽  
pp. 093103 ◽  
Author(s):  
D. S. Grierson ◽  
F. S. Flack ◽  
M. G. Lagally ◽  
K. T. Turner

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