Neutral-neutral and neutral-ion collision integrals for Y2O3-Ar plasma system

2017 ◽  
Vol 24 (6) ◽  
pp. 063514 ◽  
Author(s):  
Gayatri D. Dhamale ◽  
Swastik Nath ◽  
Vikas L. Mathe ◽  
Srikumar Ghorui
Keyword(s):  
Plasma System ◽  
Collision Integrals ◽  
Ar Plasma ◽  
Ion Collision

Evaluation of Combustion Chamber Pressure of 1N-Class Green Monopropellant Thruster with Discharge Plasma System

2017 ◽  
Vol 65 (3) ◽  
pp. 117-122
Author(s):  
Asato WADA ◽  
Hiroshi MAEDA ◽  
Takahiro SHINDO ◽  
Hiroki WATANABE ◽  
Haruki TAKEGAHARA
Keyword(s):  
Combustion Chamber ◽  
Discharge Plasma ◽  
Chamber Pressure ◽  
Plasma System

Deprocessing Methodologies for Detection of IBC and Cell-to-Cell Shorts in Submicron DRAM

2012 ◽  
Author(s):  
Ramachandra Chitakudige ◽  
Sarat Kumar Dash ◽  
A.M. Khan
Keyword(s):  
High Selectivity ◽  
Electron Cyclotron Resonance ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Plasma System ◽  
Poly Silicon ◽  
Hazardous Gases ◽  
Wet Etch ◽  
Resonance Plasma

Abstract Detection of both Insufficient Buried Contact (IBC) and cell-to-cell short defects is quite a challenging task for failure analysis in submicron Dynamic Random Access Memory (DRAM) devices. A combination of a well-controlled wet etch and high selectivity poly silicon etch is a key requirement in the deprocessing of DRAM for detection of these types of failures. High selectivity poly silicon etch methods have been reported using complicated system such as ECR (Electron Cyclotron Resonance) Plasma system. The fact that these systems use hazardous gases like Cl2, HBr, and SF6 motivates the search for safer alternative deprocessing chemistries. The present work describes high selectivity poly silicon etch using simple Reactive Ion Etch (RIE) plasma system using less hazardous gases such as CF4, O2 etc. A combination of controlled wet etch and high selectivity poly silicon etch have been used to detect both IBC and cell-to-cell shorts in submicron DRAMs.

scholarly journals Sheath size and Child–Langmuir law in one dimensional bounded plasma system in the presence of an oblique magnetic field: PIC results

2021 ◽  
Vol 28 (8) ◽  
pp. 083501
Author(s):  
J. Moritz ◽  
S. Heuraux ◽  
E. Gravier ◽  
M. Lesur ◽  
F. Brochard ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Plasma System ◽  
One Dimensional ◽  
Bounded Plasma ◽  
Oblique Magnetic Field

scholarly journals Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1595
Author(s):  
Nomin Lim ◽  
Yeon Sik Choi ◽  
Alexander Efremov ◽  
Kwang-Ho Kwon
Keyword(s):  
Gas Phase ◽  
Photoelectron Spectroscopy ◽  
Reactive Ion Etching ◽  
Research Work ◽  
Optical Emission ◽  
Plasma Parameters ◽  
Ion Etching ◽  
Ar Plasma ◽  
Ar Gas ◽  
Etching Selectivity

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

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