A metal/Ba0.6Sr0.4TiO3/SiO2/Si single film device for charge trapping memory towards a large memory window

2017 ◽  
Vol 110 (22) ◽  
pp. 223501 ◽  
Author(s):  
Yuanyuan Zhang ◽  
Tao Yang ◽  
Xiaobing Yan ◽  
Zichang Zhang ◽  
Gang bai ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Window ◽  
Large Memory ◽  
Charge Trapping Memory

Nanographene charge trapping memory with a large memory window

2015 ◽  
Vol 26 (45) ◽  
pp. 455704 ◽  
Author(s):  
Jianling Meng ◽  
Rong Yang ◽  
Jing Zhao ◽  
Congli He ◽  
Guole Wang ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Window ◽  
Large Memory ◽  
Charge Trapping Memory

scholarly journals A Gd-doped HfO2 single film for a charge trapping memory device with a large memory window under a low voltage

RSC Advances ◽  
2020 ◽  
Vol 10 (13) ◽  
pp. 7812-7816 ◽  
Author(s):  
Yuxin Shen ◽  
Zhaohao Zhang ◽  
Qingzhu Zhang ◽  
Feng Wei ◽  
Huaxiang Yin ◽  
...  
Keyword(s):  
Low Voltage ◽  
Charge Trapping ◽  
Memory Device ◽  
Memory Window ◽  
Blocking Layer ◽  
Large Memory ◽  
Charge Trapping Memory ◽  
A Charge ◽  
A Performance

In this study, a performance-enhanced charge trapping memory device with a Pt/Gd-doped HfO2/SiO2/Si structure has been investigated, where Gd-doped HfO2 acts as a charge trapping and blocking layer.

scholarly journals Large memory window with low operating voltages using Hf 1.5 Gd 2 O 6 charge trapping layer and thin MoS 2 channel

2021 ◽  
Author(s):  
Zhaohao Zhang ◽  
Yaoguang Liu ◽  
Qianhui Wei ◽  
Qingzhu Zhang ◽  
Junjie Li ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Window ◽  
Large Memory

Enhanced charge storage capability of (Bi2O3)0.4(ZrO2)0.6 charge trapping layer in nanocrystal memory devices

2019 ◽  
Vol 12 (04) ◽  
pp. 1950046
Author(s):  
H. C. Zhou ◽  
Y. X. Zhou ◽  
Yu Qiu ◽  
Jun Zhu
Keyword(s):  
Quantum Wells ◽  
Photoelectron Spectroscopy ◽  
Charge Trapping ◽  
X Ray Diffraction ◽  
X Ray ◽  
Large Memory ◽  
Rapid Temperature ◽  
Retention Characteristics ◽  
Nanocrystal Memory ◽  
Charge Trapping Memory

A structure of p-Si/Al2O3/(Bi2O3)[Formula: see text](ZrO2)[Formula: see text](BZO)/Al2O3/Pt has been fabricated as Nanocrystal Charge Trapping Memory (NCTM), where the double nanocrystals (NCs) of Bi2O3 and ZrO2 generated in BZO charge trapping layer (CTL) through rapid temperature annealing (RTA). A large memory window (MW) of [Formula: see text]8.6[Formula: see text]V and high defect traps of [Formula: see text][Formula: see text]cm[Formula: see text] were obtained at a low sweeping voltages of [Formula: see text]8[Formula: see text]V after 800∘C for 90[Formula: see text]s in O2 ambient. The devices of different RTA conditions were investigated to analyze the process of NCs traps formation by the X-ray diffraction and X-ray photoelectron spectroscopy. Excellent retention characteristics of the room temperature were observed after 104[Formula: see text]s because of the deep defect traps and high quantum wells between CTL and tunneling oxide layer (TOL).

Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory

2006 ◽  
Vol 45 (4B) ◽  
pp. 3179-3184
Author(s):  
Lei Sun ◽  
Liyang Pan ◽  
Huiqing Pang ◽  
Ying Zeng ◽  
Zhaojian Zhang ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Hole Injection ◽  
Band To Band Tunneling ◽  
Charge Trapping Memory
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