scholarly journals A Gd-doped HfO2 single film for a charge trapping memory device with a large memory window under a low voltage

RSC Advances ◽  
2020 ◽  
Vol 10 (13) ◽  
pp. 7812-7816 ◽  
Author(s):  
Yuxin Shen ◽  
Zhaohao Zhang ◽  
Qingzhu Zhang ◽  
Feng Wei ◽  
Huaxiang Yin ◽  
...  
Keyword(s):  
Low Voltage ◽  
Charge Trapping ◽  
Memory Device ◽  
Memory Window ◽  
Blocking Layer ◽  
Large Memory ◽  
Charge Trapping Memory ◽  
A Charge ◽  
A Performance

In this study, a performance-enhanced charge trapping memory device with a Pt/Gd-doped HfO2/SiO2/Si structure has been investigated, where Gd-doped HfO2 acts as a charge trapping and blocking layer.

Nanographene charge trapping memory with a large memory window

2015 ◽  
Vol 26 (45) ◽  
pp. 455704 ◽  
Author(s):  
Jianling Meng ◽  
Rong Yang ◽  
Jing Zhao ◽  
Congli He ◽  
Guole Wang ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Window ◽  
Large Memory ◽  
Charge Trapping Memory

Charge trapping memory device based on the Ga 2 O 3 films as trapping and blocking layer

2019 ◽  
Vol 28 (10) ◽  
pp. 106802
Author(s):  
Bing Bai ◽  
Hong Wang ◽  
Yan Li ◽  
Yunxia Hao ◽  
Bo Zhang ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Device ◽  
Blocking Layer ◽  
Charge Trapping Memory

A metal/Ba0.6Sr0.4TiO3/SiO2/Si single film device for charge trapping memory towards a large memory window

2017 ◽  
Vol 110 (22) ◽  
pp. 223501 ◽  
Author(s):  
Yuanyuan Zhang ◽  
Tao Yang ◽  
Xiaobing Yan ◽  
Zichang Zhang ◽  
Gang bai ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Window ◽  
Large Memory ◽  
Charge Trapping Memory

scholarly journals Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
W. J. Liu ◽  
L. Chen ◽  
P. Zhou ◽  
Q. Q. Sun ◽  
H. L. Lu ◽  
...  
Keyword(s):  
Flash Memory ◽  
Room Temperature ◽  
Metal Layer ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
Memory Device ◽  
Water Molecules ◽  
Oh Groups ◽  
Chemical Vapor Deposited ◽  
A Charge

We demonstrated a flash memory device with chemical-vapor-deposited graphene as a charge trapping layer. It was found that the average RMS roughness of block oxide on graphene storage layer can be significantly reduced from 5.9 nm to 0.5 nm by inserting a seed metal layer, which was verified by AFM measurements. The memory window is 5.6 V for a dual sweep of ±12 V at room temperature. Moreover, a reduced hysteresis at the low temperature was observed, indicative of water molecules or −OH groups between graphene and dielectric playing an important role in memory windows.

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