scholarly journals Role of hydrogen carrier gas on the growth of few layer hexagonal boron nitrides by metal-organic chemical vapor deposition

AIP Advances ◽  
2017 ◽  
Vol 7 (4) ◽  
pp. 045116 ◽  
Author(s):  
Dong Yeong Kim ◽  
Nam Han ◽  
Hokyeong Jeong ◽  
Jaewon Kim ◽  
Sunyong Hwang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Carrier Gas ◽  
Boron Nitrides ◽  
Hydrogen Carrier ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Stability Analysis of Multi Process Parameters for Metal-Organic Chemical Vapor Deposition Reaction Cavity

Molecules ◽  
2019 ◽  
Vol 24 (5) ◽  
pp. 876 ◽  
Author(s):  
Jian Li ◽  
Ziling Wu ◽  
Yifeng Xu ◽  
Yanli Pei ◽  
Gang Wang
Keyword(s):  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Operating Conditions ◽  
Organic Chemical ◽  
Carrier Gas ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

The parameters for metal-organic chemical vapor deposition (MOCVD) processes significantly influence the properties of ZnO films, especially the flow stability of the chamber, which is caused by process parameters such as the shape of reaction chamber, the working pressure, the growth temperature, the susceptor rotational speed, the gas flow rate, and the nature of the carrier gas at inlet temperature. These parameters are the preconditions for the formation of high-quality film. Therefore, this study uses Ar as a carrier gas, diethylzinc (DEZn) as a Zn source, and H2O as an oxygen source and adopts the reaction mechanism calculated by quantum chemistry, which includes ten gas reactions and eight surface reactions. The process parameters of a specific reaction chamber model were analyzed based on the computational fluid dynamics method. This study also presents an accurate prediction of the flow regime in the reactor chamber under any operating conditions, without additional experiments, based on an analysis of a great quantity of simulation data. Such research is also significant for selecting the growth parameters relevant to production, providing a specific process growth window, narrowing the debugging scope, and providing a theoretical basis for the development of MOCVD equipment and process debugging.

EFFECTS OF THE ORGANIC SOLVENT IN CARRIER GAS ON THE PREPARED TiO2 THIN FILM BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION METHOD

2011 ◽  
Vol 25 (31) ◽  
pp. 4171-4174 ◽  
Author(s):  
Toshihide Horikawa ◽  
Hiroyuki Asano ◽  
Kazuhide Akiyama ◽  
Daisuke Nakahara ◽  
Masahiro Katoh
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Organic Solvents ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Carrier Gas ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Titanium dioxide ( TiO 2) thin films are prepared on glass substrates by metal-organic chemical vapor deposition (MOCVD) method using the different organic solvents, e.g. ethanol or cyclohexane, in nitrogen carrier gas with different their concentrations. We reported the effects of the each organic solvent in the carrier gas for MOCVD method on the morphology of the composed particles, the thickness, the surface roughness, and the transparency of the prepared TiO 2 thin films with changing the deposition temperature. The morphology of the particles which compose the thin films, and the surface roughness of the prepared TiO 2 thin films are observed and measured by atomic force microscope (AFM) and field emission scanning electron microscopy (FE-SEM). The film thickness is measured by fluorescent X-ray spectroscopy (XRF), and the transparency of the films is confirmed by UV-vis spectroscopy. The transparencies of the TiO 2 thin films differ depending on the MOCVD conditions, e.g. the organic solvents species, the concentration of the container in the carrier gas and the deposition temperatures. We have found that the species and the concentration of the organic solvents in the carrier gas are very important factor to prepare homogeneous TiO 2 thin films by MOCVD method; cyclohexane inhibits to aggregate of the TiO 2 nanoparticles on the glass substrate during the MOCVD process.

scholarly journals Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

2021 ◽  
Vol 15 (6) ◽  
pp. 2170024
Author(s):  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Kaitian Zhang ◽  
Zixuan Feng ◽  
Hongping Zhao
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS2 Atomic Layers

ACS Nano ◽  
2020 ◽  
Author(s):  
Assael Cohen ◽  
Avinash Patsha ◽  
Pranab K. Mohapatra ◽  
Miri Kazes ◽  
Kamalakannan Ranganathan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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