Spin filtering action in a magnetic-nonmagnetic superlattice structure

2017 ◽  
Author(s):  
Biplab Pal
Keyword(s):  
Superlattice Structure ◽  
Spin Filtering

Dislocation Substructures Produced During Tensile, Creep, and Fatigue Deformation of Ti3Al at 700°C

1977 ◽  
Vol 35 ◽  
pp. 272-273
Author(s):  
S. M. L. Sastry
Keyword(s):  
Intermetallic Compound ◽  
Strain Rate ◽  
Tensile Creep ◽  
Slip Systems ◽  
Slip Vector ◽  
Superlattice Structure ◽  
Slip Activity ◽  
Dislocation Arrangement ◽  
Ordered Intermetallic ◽  
Tangled Dislocation

Ti3Al is an ordered intermetallic compound having the DO19-type superlattice structure. The compound exhibits very limited ductility in tension below 700°C because of a pronounced planarity of slip and the absence of a sufficient number of independent slip systems. Significant differences in slip behavior in the compound as a result of differences in strain rate and mode of deformation are reported here.Figure 1 is a comparison of dislocation substructures in polycrystalline Ti3Al specimens deformed in tension, creep, and fatigue. Slip activity on both the basal and prism planes is observed for each mode of deformation. The dominant slip vector in unidirectional deformation is the a-type (b) = <1120>) (Fig. la). The dislocations are straight, occur for the most part in a screw orientation, and are arranged in planar bands. In contrast, the dislocation distribution in specimens crept at 700°C (Fig. lb) is characterized by a much reduced planarity of slip, a tangled dislocation arrangement instead of planar bands, and an increased incidence of nonbasal slip vectors.

Antiphase Boundaries in Ordered Ni3FE Crystals

1969 ◽  
Vol 27 ◽  
pp. 62-63
Author(s):  
Y. H. Liu
Keyword(s):  
Domain Size ◽  
Antiphase Domain ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hardening Mechanism ◽  
Superlattice Structure ◽  
Disordered Phase ◽  
Domain Boundaries ◽  
Atomic Scattering ◽  
The Difference

Ordered Ni3Fe crystals possess a LI2 type superlattice similar to the Cu3Au structure. The difference in slip behavior of the superlattice as compared with that of a disordered phase has been well established. Cottrell first postulated that the increase in resistance for slip in the superlattice structure is attributed to the presence of antiphase domain boundaries. Following Cottrell's domain hardening mechanism, numerous workers have proposed other refined models also involving the presence of domain boundaries. Using the anomalous X-ray diffraction technique, Davies and Stoloff have shown that the hardness of the Ni3Fe superlattice varies with the domain size. So far, no direct observation of antiphase domain boundaries in Ni3Fe has been reported. Because the atomic scattering factors of the elements in NijFe are so close, the superlattice reflections are not easily detected. Furthermore, the domain configurations in NioFe are thought to be independent of the crystallographic orientations.

Observation of GaAs/AlAs Superlattice Structures in both Secondary and Backscattcred Electron Imaging Modes with an Ultrahigh Resolution Scanning Electron Microscope

1990 ◽  
Vol 48 (1) ◽  
pp. 404-405
Author(s):  
K. Ogura ◽  
A. Ono ◽  
S. Franchi ◽  
P.G. Merli ◽  
A. Migliori
Keyword(s):  
Gaas Layer ◽  
Objective Lens ◽  
Superlattice Structure ◽  
Backscattered Electron ◽  
Instrumental Resolution ◽  
Electron Microscopes ◽  
Superlattice Structures ◽  
Electron Imaging ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

In the last few years the development of Scanning Electron Microscopes (SEM), equipped with a Field Emission Gun (FEG) and using in-lens specimen position, has allowed a significant improvement of the instrumental resolution . This is a result of the fine and bright probe provided by the FEG and by the reduced aberration coefficients of the strongly excited objective lens. The smaller specimen size required by in-lens instruments (about 1 cm, in comparison to 15 or 20 cm of a conventional SEM) doesn’t represent a serious limitation in the evaluation of semiconductor process techniques, where the demand of high resolution is continuosly increasing. In this field one of the more interesting applications, already described (1), is the observation of superlattice structures.In this note we report a comparison between secondary electron (SE) and backscattered electron (BSE) images of a GaAs / AlAs superlattice structure, whose cross section is reported in fig. 1. The structure consist of a 3 nm GaAs layer and 10 pairs of 7 nm GaAs / 15 nm AlAs layers grown on GaAs substrate. Fig. 2, 3 and 4 are SE images of this structure made with a JEOL JSM 890 SEM operating at an accelerating voltage of 3, 15 and 25 kV respectively. Fig. 5 is a 25 kV BSE image of the same specimen. It can be noticed that the 3nm layer is always visible and that the 3 kV SE image, in spite of the poorer resolution, shows the same contrast of the BSE image. In the SE mode, an increase of the accelerating voltage produces a contrast inversion. On the contrary, when observed with BSE, the layers of GaAs are always brighter than the AlAs ones , independently of the beam energy.

scholarly journals Spatial Decomposition of a Broadband Pulse Caused by Strong Frequency Dispersion of Sound in Acoustic Metamaterial Superlattice

Materials ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 125
Author(s):  
Yuqi Jin ◽  
Yurii Zubov ◽  
Teng Yang ◽  
Tae-Youl Choi ◽  
Arkadii Krokhin ◽  
...  
Keyword(s):  
Acoustic Pulse ◽  
Frequency Dispersion ◽  
Transmission Band ◽  
Lateral Position ◽  
Operating Frequency ◽  
Frequency Range ◽  
Frequency Spectra ◽  
Acoustic Metamaterial ◽  
Superlattice Structure ◽  
Broadband Pulse

An acoustic metamaterial superlattice is used for the spatial and spectral deconvolution of a broadband acoustic pulse into narrowband signals with different central frequencies. The operating frequency range is located on the second transmission band of the superlattice. The decomposition of the broadband pulse was achieved by the frequency-dependent refraction angle in the superlattice. The refracted angle within the acoustic superlattice was larger at higher operating frequency and verified by numerical calculated and experimental mapped sound fields between the layers. The spatial dispersion and the spectral decomposition of a broadband pulse were studied using lateral position-dependent frequency spectra experimentally with and without the superlattice structure along the direction of the propagating acoustic wave. In the absence of the superlattice, the acoustic propagation was influenced by the usual divergence of the beam, and the frequency spectrum was unaffected. The decomposition of the broadband wave in the superlattice’s presence was measured by two-dimensional spatial mapping of the acoustic spectra along the superlattice’s in-plane direction to characterize the propagation of the beam through the crystal. About 80% of the frequency range of the second transmission band showed exceptional performance on decomposition.

Optical modulator based on a Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice structure

Laser Physics ◽  
2008 ◽  
Vol 18 (4) ◽  
pp. 438-441
Author(s):  
X. Tu ◽  
Y. Zuo ◽  
S. Chen ◽  
L. Zhao ◽  
J. Yu ◽  
...  
Keyword(s):  
Optical Modulator ◽  
Superlattice Structure

scholarly journals Vacancy tuned thermoelectric properties and high spin filtering performance in graphene/silicene heterostructures

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Zainab Gholami ◽  
Farhad Khoeini
Keyword(s):  
Electric Fields ◽  
High Spin ◽  
High Efficiency ◽  
Practical Applications ◽  
External Electric Fields ◽  
Ferromagnetic Exchange ◽  
High Spin Polarization ◽  
Filtering Effect ◽  
Spin Switching ◽  
Spin Filtering

AbstractThe main contribution of this paper is to study the spin caloritronic effects in defected graphene/silicene nanoribbon (GSNR) junctions. Each step-like GSNR is subjected to the ferromagnetic exchange and local external electric fields, and their responses are determined using the nonequilibrium Green’s function (NEGF) approach. To further study the thermoelectric (TE) properties of the GSNRs, three defect arrangements of divacancies (DVs) are also considered for a larger system, and their responses are re-evaluated. The results demonstrate that the defected GSNRs with the DVs can provide an almost perfect thermal spin filtering effect (SFE), and spin switching. A negative differential thermoelectric resistance (NDTR) effect and high spin polarization efficiency (SPE) larger than 99.99% are obtained. The system with the DV defects can show a large spin-dependent Seebeck coefficient, equal to Ss ⁓ 1.2 mV/K, which is relatively large and acceptable. Appropriate thermal and electronic properties of the GSNRs can also be obtained by tuning up the DV orientation in the device region. Accordingly, the step-like GSNRs can be employed to produce high efficiency spin caloritronic devices with various features in practical applications.

Highly‐Efficient Spin‐Filtering Transport in Chiral Hybrid Copper Halides

2021 ◽  
Author(s):  
Ying Lu ◽  
Qian Wang ◽  
Ruilin He ◽  
Foxin Zhou ◽  
Xia Yang ◽  
...  
Keyword(s):  
Highly Efficient ◽  
Copper Halides ◽  
Spin Filtering
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