Effect of internal field on the high resistance state retention of unipolar resistance switching in ferroelectric vanadium doped ZnO

2017 ◽  
Vol 110 (14) ◽  
pp. 143502 ◽  
Author(s):  
Changjin Wu ◽  
Yuefa Jia ◽  
Yeong Jae Shin ◽  
Tae Won Noh ◽  
Seung Chul Chae ◽  
...  
Keyword(s):  
High Resistance ◽  
High Resistance State ◽  
Internal Field ◽  
Resistance Switching ◽  
Resistance State ◽  
Doped Zno

Enhanced Resistance Switching of Ga2O3 Thin Films by Ultraviolet Radiation

2020 ◽  
Vol 20 (5) ◽  
pp. 3283-3286 ◽  
Author(s):  
Yuehua An ◽  
Xia Shen ◽  
Yuying Hao ◽  
Pengfei Guo ◽  
Weihua Tang
Keyword(s):  
Ultraviolet Radiation ◽  
High Resistance ◽  
High Resistance State ◽  
High Ratio ◽  
Resistance Switching ◽  
Resistive State ◽  
Oxide Systems ◽  
Low Resistance ◽  
Resistance State

Conductive filament mechanism can explain major resistance switching behaviors. The forming/deforming of the filaments define the high/low resistance states. The ratio of high/low resistance depends on the characterization of the filaments. In many oxide systems, the oxygen vacancies are important to forming the conductive filaments for the resistance switching behaviors. As ultrawide band gap semiconductor, Ga2O3 has very high resistance for its high resistance state, while its low resistive state has relative high resistance, which normally results in low ratio of high/low resistance. In this letter, we report a high ratio of high/low resistance by ultraviolet radiation. The I–V characteristics of Au/Ti/β-Ga2O3/W sandwich structure device shows that the HRS to LRS ratio of 5 orders is achieved.

Effect of Substrate on Memristive Switching of Pr0.7Ca0.3MnO3

2013 ◽  
Vol 209 ◽  
pp. 198-202 ◽  
Author(s):  
Komal H. Bhavsar ◽  
Utpal S. Joshi
Keyword(s):  
High Resistance ◽  
Lattice Mismatch ◽  
High Resistance State ◽  
Grazing Incidence ◽  
Resistance Switching ◽  
Planar Geometry ◽  
Perovskite Manganite ◽  
Electrical Measurements ◽  
Induce Resistance ◽  
Resistance State

. Perovskite manganite Pr0.7Ca0.3MnO3 (PCMO) thin film nanostructures were grown on different substrates by chemical solution deposition to investigate its electrical switching properties. Planar structures consisting of Ag/Pr0.7Ca0.3MnO3/Ag grown on SiO2, Si (100), LaAlO3 (100) and MgO (100) were characterized by grazing incidence X-ray diffraction, atomic force microscopy and electrical measurements. In each case, single PCMO phase formation and smooth surface morphology was confirmed by XRD and AFM, respectively. Four terminal current voltage characteristics of Ag/PCMO/Ag planar geometry exhibited a sharp transition from a low resistance state (LRS) to a high resistance state (HRS) with a high resistance switching ratios of the order of 950 for PCMO films grown on quartz was estimated at room temperature. High resistance switching ratios were found to depend on the substrate, suggesting a role of lattice mismatch for resistance switching. We have observed that higher mismatch lead to better resistance switching in this compound. The observed conduction characteristics provide direct evidence of substrate strain induce resistance switching in the Pr0.7Ca0.3MnO3.

Non-Volatile Giant Resistance Switching in Metal-Insulator-Manganite Junctions

2004 ◽  
Vol 830 ◽  
Author(s):  
Rickard Fors ◽  
Sergey I. Khartsev ◽  
Alexander M. Grishin
Keyword(s):  
Single Crystals ◽  
High Resistance ◽  
Pulsed Laser ◽  
High Resistance State ◽  
Resistance Switching ◽  
Pulse Regime ◽  
Metal Insulator ◽  
Electrical Switching ◽  
Resistance State ◽  
Insulating Properties

ABSTRACTHeteroepitaxial CeO2(80nm)/L0.67Ca0.33MnO3(400nm) film structures have been pulsed laser deposited on LaAlO3(001) single crystals to fabricate two terminal resistance switching devices. Ag/CeO2/L0.67Ca0.33MnO3 junctions exhibit reproducible switching between a high resistance state (HRS) with insulating properties and a semiconducting or metallic low resistance state (LRS) with resistance ratios up to 105. Reversible electrical switching is a polar effect achievable both in continuous sweeping mode and in the pulse regime.

Study of the Structural Transformation of Ge2Sb2Te5 Induced by Current Pulse in Phase Change Memory

2003 ◽  
Vol 803 ◽  
Author(s):  
Rong Zhao ◽  
Tow Chong Chong ◽  
Lu Ping Shi ◽  
Pik Kie Tan ◽  
Hao Meng ◽  
...  
Keyword(s):  
Phase Change ◽  
Structural Transformation ◽  
Active Layer ◽  
High Resistance ◽  
Phase Change Memory ◽  
High Resistance State ◽  
Face Centered Cubic ◽  
Cycle Number ◽  
Resistance State ◽  
Change Memory

ABSTRACTThe electrical induced structural transformation of Ge2Sb2Te5 thin film in phase change memory device was investigated using micro-Raman spectroscopy and transmission electronic microscopy (TEM). Selected area electron diffraction (SAD) pattern showed that the electrical-induced Ge2Sb2Te5 film was crystallized into a face-centered cubic structure. Micro-Raman spectra show that the Ge2Sb2Te5 active layer at the high resistance state exhibited two minor peaks superposed on the broad peak after several switch cycles, which is identical to those of the Ge2Sb2Te5 active layer at the low resistance state. This is most likely due to the accumulation of segregated crystallites. TEM results suggest that the existence of nano-sized nuclei clusters resulted in the reduced resistance for the Ge2Sb2Te5 active layer at the high resistance state after first several switches. The dependence of resistance on the cycle number indicates that the deterioration of the Ge2Sb2Te5 active layer is resulted from the incomplete amorphization process, which is consistent with the micro-Raman results.

Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM

2020 ◽  
Vol 53 (39) ◽  
pp. 395101 ◽  
Author(s):  
Shih-Kai Lin ◽  
Cheng-Hsien Wu ◽  
Min-Chen Chen ◽  
Ting-Chang Chang ◽  
Chen-Hsin Lien ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Resistance ◽  
State Level ◽  
High Resistance State ◽  
Resistance State

Reversible multilevel resistance switching of Ag–La0.7Ca0.3MnO3–Pt heterostructures

2008 ◽  
Vol 23 (2) ◽  
pp. 302-307 ◽  
Author(s):  
Dashan Shang ◽  
Lidong Chen ◽  
Qun Wang ◽  
Zihua Wu ◽  
Wenqing Zhang ◽  
...  
Keyword(s):  
High Resistance ◽  
Electric Pulse ◽  
Interface Layer ◽  
Resistance Switching ◽  
The Other ◽  
Switching Behavior ◽  
Parallel Effect ◽  
Initial Resistance ◽  
Resistance State ◽  
Multilevel Memory

The electric-pulse–induced resistance switching of the Ag–La0.7Ca03MnO3(LCMO)–Pt heterostructures was studied. The multilevel resistance switching (MLRS), in which several resistance states can be obtained, was observed in the switching from high to low resistance state (HRS → LRS) by applying electric pulse with various pulse voltages. The threshold pulse voltages of MLRS are related to the initial resistance values as well as the switching directions. On the other hand, the resistance switching behavior from low to high resistance states (LRS → HRS) shows unobvious MLRS. According to the resistance switching behavior in serial and parallel modes, MLRS was explained by the parallel effect of multifilament forming/rupture in the Ag–LCMO interface layer. The present results suggest a possible application of Ag–LCMO–Pt heterostructures as multilevel memory devices.

scholarly journals Electric Modulation of Conduction in MAPbBr3 Single Crystals

2020 ◽  
Author(s):  
Shanming Ke ◽  
Shangyu Luo ◽  
Jinhui Gong ◽  
Liwen Qiu ◽  
Renhong Liang ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystals ◽  
Resistive Switching ◽  
High Resistance ◽  
High Resistance State ◽  
Pt Symmetry ◽  
Interface Trap ◽  
Electrode Area ◽  
Resistance State ◽  
Open Question

Abstract The resistive switching (RS) mechanism of hybrid organic-inorganic perovskites is an open question until now. Here, a switchable diode-like RS behavior in MAPbBr3 single crystals using Au (or Pt) symmetry electrodes is reported. Both the high resistance state (HRS) and low resistance state (LRS) are electrode-area dependent and light responsive. We propose an electric-field-driven inner p-n junction accompanied by an interface trap-controlled SCLC mechanism to explain this switchable diode-like RS behavior in MAPbBr3 single crystals.

Features of Switching Memristor Structures to a High-Resistance State by Sawtooth Pulses

2018 ◽  
Vol 44 (12) ◽  
pp. 1160-1162 ◽  
Author(s):  
D. O. Filatov ◽  
V. V. Karzanov ◽  
I. N. Antonov ◽  
O. N. Gorshkov
Keyword(s):  
High Resistance ◽  
High Resistance State ◽  
Resistance State

scholarly journals New Thick Film Functional Devices

1981 ◽  
Vol 8 (1-2) ◽  
pp. 77-82
Author(s):  
Y. Taketa ◽  
O. Abe ◽  
M. Haradome
Keyword(s):  
Thick Film ◽  
High Resistance ◽  
Recovery Time ◽  
High Resistance State ◽  
Negative Resistance ◽  
Resistance Change ◽  
Low Resistance ◽  
Non Volatile Memory ◽  
Resistance State ◽  
Oscillation Characteristic

The development of thick-film functional devices having oscillation, negative resistance, switching, memory and so on has been needed.New non-volatile memory devices manufactured of Nb2O5-based thick-film have now been created. The thick-film devices have been prepared by using common thick-film technology such as screen printing, drying and firing. The characteristics and the operation of the devices are as follows:When a dc voltage is applied to the devices, rapid resistance change, so called switching effect, occurs. The devices have low resistance state. Even when the voltage is removed completely, the devices do not return to high resistance state and keep low resistance state. However, when alternating voltage is impressed upon the devices, the low resistance state goes to the high resistance state. The recovery time of the resistance state depends upon the frequency of applied ac voltage. The higher frequency voltage that is applied, the sooner the recovery time becomes. The threshold voltage exponentially increases with higher frequency of an applied ac voltage.In addition to the memory effect, the Nb2O5-based thick-film devices have a switching and oscillation characteristic.

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