scholarly journals New Thick Film Functional Devices

1981 ◽  
Vol 8 (1-2) ◽  
pp. 77-82
Author(s):  
Y. Taketa ◽  
O. Abe ◽  
M. Haradome
Keyword(s):  
Thick Film ◽  
High Resistance ◽  
Recovery Time ◽  
High Resistance State ◽  
Negative Resistance ◽  
Resistance Change ◽  
Low Resistance ◽  
Non Volatile Memory ◽  
Resistance State ◽  
Oscillation Characteristic

The development of thick-film functional devices having oscillation, negative resistance, switching, memory and so on has been needed.New non-volatile memory devices manufactured of Nb2O5-based thick-film have now been created. The thick-film devices have been prepared by using common thick-film technology such as screen printing, drying and firing. The characteristics and the operation of the devices are as follows:When a dc voltage is applied to the devices, rapid resistance change, so called switching effect, occurs. The devices have low resistance state. Even when the voltage is removed completely, the devices do not return to high resistance state and keep low resistance state. However, when alternating voltage is impressed upon the devices, the low resistance state goes to the high resistance state. The recovery time of the resistance state depends upon the frequency of applied ac voltage. The higher frequency voltage that is applied, the sooner the recovery time becomes. The threshold voltage exponentially increases with higher frequency of an applied ac voltage.In addition to the memory effect, the Nb2O5-based thick-film devices have a switching and oscillation characteristic.

Electric-Pulse-Induced Reversible Resistance Change Effect and Its Fatigue Behavior in Manganite Perovskite Films

2005 ◽  
Vol 475-479 ◽  
pp. 3799-3802
Author(s):  
Qun Wang ◽  
Rui Dong ◽  
Li Dong Chen ◽  
Tong Lai Chen ◽  
Xiao Min Li
Keyword(s):  
High Resistance ◽  
Sandwich Structure ◽  
Electric Pulse ◽  
Fatigue Behavior ◽  
High Resistance State ◽  
Resistance Change ◽  
Low Resistance ◽  
Change Effect ◽  
Resistance State ◽  
Pulse Polarity

A novel electric-pulse-induced reversible resistance (EPIR) change effect was observed in Ag/Ln1-xCaxMnO3/Pt (Ln= Pr, La) sandwich structure at room temperature without applied magnetic field. The Ln1-xCaxMnO3 films were grown on Pt/Ti/SiO2/Si substrate. The resistance of the Ag/Ln1-xCaxMnO3/Pt sandwich structure increases and reaches at a saturated high resistance state after applying a certain number of electric-pulse from Pt bottom electrode to Ln1-xCaxMnO3 layer, while it decreases and switches to a saturated low resistance state when the pulse polarity reversed. It is also found that the EPIR effect in the /Ln0.7Ca0.3MnO3/Pt system exhibits “fatigue” behavior, that is, for the high resistance state activated by electric-pulse, along the time after pulsing, the resistance decreases slowly after a certain stable stage; otherwise, the resistance change ratio decreases as the number of the high-low resistance switching circle increases. For the fatigue phenomenon with time, a resistance change with three stages was observed and a simple mechanism of the EPIR was proposed.

Enhanced Resistance Switching of Ga2O3 Thin Films by Ultraviolet Radiation

2020 ◽  
Vol 20 (5) ◽  
pp. 3283-3286 ◽  
Author(s):  
Yuehua An ◽  
Xia Shen ◽  
Yuying Hao ◽  
Pengfei Guo ◽  
Weihua Tang
Keyword(s):  
Ultraviolet Radiation ◽  
High Resistance ◽  
High Resistance State ◽  
High Ratio ◽  
Resistance Switching ◽  
Resistive State ◽  
Oxide Systems ◽  
Low Resistance ◽  
Resistance State

Conductive filament mechanism can explain major resistance switching behaviors. The forming/deforming of the filaments define the high/low resistance states. The ratio of high/low resistance depends on the characterization of the filaments. In many oxide systems, the oxygen vacancies are important to forming the conductive filaments for the resistance switching behaviors. As ultrawide band gap semiconductor, Ga2O3 has very high resistance for its high resistance state, while its low resistive state has relative high resistance, which normally results in low ratio of high/low resistance. In this letter, we report a high ratio of high/low resistance by ultraviolet radiation. The I–V characteristics of Au/Ti/β-Ga2O3/W sandwich structure device shows that the HRS to LRS ratio of 5 orders is achieved.

Resistive Switching Characteristics of Cu/SiO2/Pt Structure

2011 ◽  
Vol 687 ◽  
pp. 167-173 ◽  
Author(s):  
Chih Yi Liu ◽  
Po Wei Sung ◽  
Chun Hung Lai ◽  
Hung Yu Wang
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
High Resistance ◽  
High Resistance State ◽  
Simple Method ◽  
Well Control ◽  
Low Resistance ◽  
Initial Resistance ◽  
Resistance State ◽  
Switching Characteristics

SiO2thin films were fabricated as resistive layers of Cu/SiO2/Pt devices to investigate resistive switching properties. A thermal annealing was performed to allow for the diffusion of Cu ions into the SiO2thin films, leading to the formation of Cu-doped SiO2layers. Occurrence probabilities of the resistive switching and initial resistance-states of the devices were influenced by SiO2thickness, which was dependent on the Cu diffusion status within the SiO2layer. The resistive switching behaviors were characterized by the voltage sweeping mode and the current sweeping mode. The current sweeping mode provided a desired compliance current to well control the resistive switching from the high resistance-state to the low resistance-state (SET). Therefore, the large RESET (from the low resistance-state to the high resistance-state) current was not inherent in the device, due to poor control of the compliance current by the voltage sweeping mode. The current sweeping mode is a simple method to characterize the RESET current.

Scalability of voltage-controlled filamentary and nanometallic resistance memory devices

Nanoscale ◽  
2017 ◽  
Vol 9 (34) ◽  
pp. 12690-12697 ◽  
Author(s):  
Yang Lu ◽  
Jong Ho Lee ◽  
I.-Wei Chen
Keyword(s):  
High Resistance ◽  
High Resistance State ◽  
Memory Devices ◽  
Low Resistance ◽  
Controlled Switching ◽  
Current Compliance ◽  
Resistance State

An area-proportional current compliance can ensure the area-scalability of RRAM's resistance, in both the high resistance state and the low resistance state, which stems from voltage-controlled switching.

scholarly journals Electric modulation of conduction in MAPbBr3 single crystals

2020 ◽  
Author(s):  
Shanming Ke ◽  
Shangyu Luo ◽  
Jinhui Gong ◽  
Liwen Qiu ◽  
Renhong Liang ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystals ◽  
Resistive Switching ◽  
High Resistance ◽  
Conduction Mechanism ◽  
High Resistance State ◽  
Electrode Area ◽  
Low Resistance ◽  
Resistance State ◽  
Open Question

Abstract The resistive switching (RS) mechanism of hybrid organic-inorganic perovskites is an open question until now. Here, a switchable diode-like RS behavior in MAPbBr3 single crystals using Au (or Pt) symmetric electrodes is reported. Both the high resistance state (HRS) and low resistance state (LRS) are electrode-area dependent and light responsive. We propose an electric-field-driven inner p-n junction accompanied by a trap-controlled SCLC conduction mechanism to explain this switchable diode-like RS behavior in MAPbBr3 single crystals.

Resistive switching of multiferroic BiCoO3 nanoflowers

2015 ◽  
Vol 08 (01) ◽  
pp. 1550001 ◽  
Author(s):  
Bai Sun ◽  
Qiling Li ◽  
Yonghong Liu ◽  
Peng Chen
Keyword(s):  
Resistive Switching ◽  
High Resistance ◽  
Hydrothermal Process ◽  
High Resistance State ◽  
Bipolar Resistive Switching ◽  
Low Resistance ◽  
Current Voltage ◽  
Extreme Change ◽  
Resistance State ◽  
Switching Characteristics

Multiferroic BiCoO 3 nanoflowers were synthesized by a hydrothermal process. The BiCoO 3 nanoflowers show superior bipolar resistive switching characteristics. The typical current–voltage (I–V) characteristics of the Ag / BiCoO 3/ Ag structures exhibit an extreme change in resistance between high resistance state (HRS) or "OFF" state and low resistance state (LRS) or "ON" state with ON/OFF ratio ~ 105.

scholarly journals Alloyed High-k-Based Resistive Switching Memory in Contact Hole Structures

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 451
Author(s):  
Byeongjeong Kim ◽  
Chandreswar Mahata ◽  
Hojeong Ryu ◽  
Muhammad Ismail ◽  
Byung-Do Yang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
High Resistance ◽  
Random Access ◽  
High Resistance State ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Long Term Memory ◽  
Pulse Input ◽  
Low Resistance ◽  
Resistance State

Resistive random-access memory (RRAM) devices are noticeable next generation memory devices. However, only few studies have been conducted regarding RRAM devices made of alloy. In this paper, we investigate the resistive switching behaviors of an Au/Ti/HfTiOx/p-Si memory device. The bipolar switching is characterized depending on compliance current under DC sweep mode. Good retention in the low-resistance state and high-resistance state is attained for nonvolatile memory and long-term memory in a synapse device. For practical switching operation, the pulse transient characteristics are studied for set and reset processes. Moreover, a synaptic weight change is achieved by a moderate pulse input for the potentiation and depression characteristics of the synaptic device. We reveal that the high-resistance state and low-resistance state are dominated by Schottky emissions.

Unipolar Resistive Switching and Associated Photoresponse in Sm doped BiFeO3 Thin Film Grown by RF Sputtering

2013 ◽  
Vol 1577 ◽  
Author(s):  
Rajesh K. Katiyar ◽  
Pankaj Misra ◽  
G. L Sharma ◽  
Gerardo Morell ◽  
J. F Scott ◽  
...  
Keyword(s):  
Resistive Switching ◽  
High Resistance ◽  
Rf Sputtering ◽  
High Resistance State ◽  
Forming Process ◽  
Low Resistance ◽  
Ohmic Behavior ◽  
Conduction Behavior ◽  
Resistance State ◽  
Unipolar Resistive Switching

ABSTRACTNonvolatile unipolar resistive switching has been observed in Sm doped BFO thin films in Pt/Sm: BFO/SRO stack geometry. The initial forming voltage was found to be ∼ 11 V. After the forming process repeatable switching of the resistance of Sm:BFO film was obtained between low and high resistance states with nearly constant resistance ratio ∼ 105 and non overlapping switching voltages in the range of 0.7-1 V and 4-6 V respectively. The temperature dependent measurements of the resistance of the device indicated metallic and semiconducting conduction behavior in low and high resistance states respectively. The current conduction mechanism of the Pt/Sm:BFO/SRO device in low resistance states was found to be dominated by the Ohmic behavior while in case of high resistance state and at high voltages it deviated significantly from normal Ohmic behavior and was found to correspond the Pool-Frankel (PF) emission. The Pt/Sm:BFO/SRO structure also showed efficient photo-response in high and low resistance states with increase in photocurrent which was significantly higher in low resistance state when illuminated with white light.

scholarly journals Резистивное переключение в структурах металл-оксид-полупроводник с наноостровками GeSi на подложке кремния

2020 ◽  
Vol 90 (10) ◽  
pp. 1741
Author(s):  
С.В. Тихов ◽  
В.Г. Шенгуров ◽  
С.А. Денисов ◽  
И.Н. Антонов ◽  
А.В. Круглов ◽  
...  
Keyword(s):  
Resistive Switching ◽  
High Resistance ◽  
High Resistance State ◽  
Metal Electrode ◽  
Semiconductor Interface ◽  
Bipolar Resistive Switching ◽  
Low Resistance ◽  
Resistance State ◽  
Intrinsic Photosensitivity ◽  
Mos Structures

The self-assembled GeSi nanoislands built into the semiconductor-insulator interface of the MOS-structures based on Si(001) with SiOx and ZrO2(Y) oxide layers deposited by magnetron sputtering have been shown to initiate bipolar resistive switching without preliminary electroforming. The current-voltage curves and electrical parameters of the MOS-structures in the high-resistance state and in the low-resistance state have been studied. A change in the built-in charge in the dielectric near the insulator-semiconductor interface during resistive switching is established and associated with the formation and destruction of conductive filaments. The light-stimulated resistive switching of MOS-structures with ZrO2(Y) layer from the high-resistance to the low-resistance state is observed, which is associated with an increase in the conductivity of the space-charge region in the Si substrate due to interband optical absorption in Si, which causes a voltage redistribution between Si and ZrO2(Y) layer. A difference in the shape of the small signal photo-voltage spectra of MOS-structures is found in the spectral region of intrinsic photosensitivity of Si in the high and low resistance states due to the leakage of photo-excited charge carriers from Si to the metal electrode through filaments.

Analysis on Resistance Change Mechanism of NiO-ReRAM Using Visualization Technique of Data Storage Area With Secondary Electron Image

2010 ◽  
Vol 1250 ◽  
Author(s):  
Kentaro Kinoshita ◽  
Tatsuya Makino ◽  
Yoda Takatoshi ◽  
Dobashi Kazufumi ◽  
Kishida Satoru
Keyword(s):  
Data Storage ◽  
Secondary Electron ◽  
High Resistance State ◽  
Secondary Electron Image ◽  
Resistance Change ◽  
Force Microscopy ◽  
Electron Image ◽  
Storage Area ◽  
Resistance State ◽  
Pt Films

AbstractBoth a low resistance state and a high resistance state which were written by the voltage application in a local region of NiO/Pt films by using conducting atomic force microscopy (C-AFM) were observed by using scanning electron microscope (SEM) and electron probe micro analysis (EPMA). The writing regions are distinguishable as dark areas in a secondary electron image and thus can be specified without using complicated sample fabrication process to narrow down the writing regions such as the photolithography technique. In addition, the writing regions were analyzed by using energy dispersive X-ray spectroscopy (EDS) mapping. No difference between the inside and outside of the writing regions is observed for all the mapped elements including C and Rh. Here, C and Rh are the most probable candidates for contamination which affect the secondary electron image. Therefore, our results suggested that the observed change in the contrast of the second electron image is related to the intrinsic change in the electronic state of the NiO film and a secondary electron yield is correlated to the physical properties of the film.

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