scholarly journals Influence of thickness on crystallinity in wafer-scale GaTe nanolayers grown by molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (3) ◽  
pp. 035113 ◽  
Author(s):  
Che Jin Bae ◽  
Jonathan McMahon ◽  
Hermann Detz ◽  
Gottfried Strasser ◽  
Junsung Park ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Wafer Scale

Molecular Beam Epitaxy Scalable Growth of Wafer‐Scale Continuous Semiconducting Monolayer MoTe 2 on Inert Amorphous Dielectrics

2019 ◽  
pp. 1901578 ◽  
Author(s):  
Qingyuan He ◽  
Pengji Li ◽  
Zhiheng Wu ◽  
Bin Yuan ◽  
Zhongtao Luo ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Wafer Scale

Thermally annealed wafer-scale h-BN films grown on sapphire substrate by molecular beam epitaxy

2020 ◽  
Vol 116 (14) ◽  
pp. 142104
Author(s):  
F. Liu ◽  
X. Rong ◽  
Y. Yu ◽  
T. Wang ◽  
B. W. Sheng ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Wafer Scale

Wafer-Scale and Topologically Nontrivial α - Sn Films Grown on InSb(001) by Molecular-Beam Epitaxy

2022 ◽  
Vol 17 (1) ◽  
Author(s):  
Yuanfeng Ding ◽  
Huanhuan Song ◽  
Junwei Huang ◽  
Jinshan Yao ◽  
Yu Gu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Wafer Scale

scholarly journals Wafer-scale all-epitaxial GeSn-on-insulator on Si(1 1 1) by molecular beam epitaxy

2018 ◽  
Vol 51 (32) ◽  
pp. 32LT01 ◽  
Author(s):  
Krista R Khiangte ◽  
Jaswant S Rathore ◽  
J Schmidt ◽  
H J Osten ◽  
A Laha ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Wafer Scale

scholarly journals Wafer-scale two-dimensional ferromagnetic Fe3GeTe2 thin films grown by molecular beam epitaxy

2017 ◽  
Vol 1 (1) ◽  
Author(s):  
Shanshan Liu ◽  
Xiang Yuan ◽  
Yichao Zou ◽  
Yu Sheng ◽  
Ce Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Two Dimensional ◽  
Wafer Scale

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

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