scholarly journals Estimation of plasma ion saturation current and reduced tip arcing using Langmuir probe harmonics

2017 ◽  
Vol 88 (3) ◽  
pp. 033505
Author(s):  
J. A. Boedo ◽  
D. L. Rudakov
Keyword(s):  
Langmuir Probe ◽  
Saturation Current

Accurate measurement of the ion saturation current collected by a cylindrical Langmuir probe in cold plasmas

2020 ◽  
Vol 17 (11) ◽  
pp. 2000073 ◽  
Author(s):  
Juan Manuel Díaz‐Cabrera ◽  
José I. Fernández Palop ◽  
Guillermo F. Regodón ◽  
Jerónimo Ballesteros
Keyword(s):  
Langmuir Probe ◽  
Saturation Current ◽  
Cold Plasmas ◽  
Cylindrical Langmuir Probe

A Double Hemispherical Probe for the Advancement of In Situ Plasma Measurements

2020 ◽  
Author(s):  
Joseph Samaniego ◽  
Xu Wang
Keyword(s):  
Langmuir Probe ◽  
High Surface ◽  
Low Density ◽  
Saturation Current ◽  
Langmuir Probes ◽  
Plasma Parameters ◽  
Ambient Plasma ◽  
Surface Emission ◽  
Plasma Measurements

<p>Langmuir probes are conductors of simple geometries (spheres, disks, cylinders, etc.) inserted into a plasma. By sweeping a voltage on the probe and measuring the current collected or emitted, a current-voltage (I-V) relationship can be found and interpreted to derive the density, temperature, and potential of the ambient plasma. Over the past 50 years, Langmuir probes have been flown on spacecraft missions for in-situ measurements of the local plasma environment. However, even after decades of use, there are still challenges in the analysis and interpretation of Langmuir probe measurements due to local plasmas created around the probe as a result of plasma interactions with the probe itself and spacecraft.</p><p>The Double Hemispherical Probe (DHP) is a directional Langmuir probe made of two hemispheres that are electrically isolated from each other and swept with a voltage together to get two separate I-V curves. The DHP uses the I-V curve differences between the two hemispheres to gain information of the asymmetry of the local plasma around the probe to retrieve the true ambient plasma parameters. Specifically, the DHP is intended to improve the plasma measurements in the following scenarios: i) Low-density plasmas; ii) flowing plasmas; iii) high-surface-emission environments; and iv) dust-rich plasmas. The following discusses the current progress of the DHP development.</p><p>Low-density plasmas create large Debye sheaths around the spacecraft that may engulf the Langmuir probe attached to a boom with a finite length. The potential drop in the sheath can change the characteristics of charged particles collected by the probe, causing mischaracterization of the ambient plasma. As expected, the I-V curves of both hemispheres match in the bulk plasma. It was found that as the DHP is moved ‘deeper’ into the sheath of the spacecraft, the currents of the two hemispheres diverge. The saturation current ratio of the hemispheres of the DHP was found to have monotonic relationships with the plasma characteristics measured in the sheath. A technique was created to retrieve the ambient plasma parameters.</p><p>In space ions generally have relative velocities with respect to the spacecraft due to flowing plasmas or fast-moving spacecraft, creating an ion wake behind the probe itself. This self-wake can cause issues in interpreting the I-V curves for both ion and electron species. The ion saturation current of either hemisphere of the DHP is dependent on the ion Mach number (the ratio of the ion flow speed to the thermal speed). Electrons are generally in the thermal state. However, depending on the ratio of the probe size to the Debye length, ambipolar electric fields can be created at the wake boundaries, causing the reduction of the electron density in the downstream side of the probe and its subsequent underestimation measured by traditional single Langmuir probes. It was shown that the DHP can identify this self-wake effect and properly measure the true ambient plasma parameters.    </p><p>Future work will explore the effects of high-surface-emission environments and dust-rich plasmas on DHP measurements and to develop techniques to resolve the true ambient plasma parameters in these environments. </p>

Transition from sheath-convection to saturation-current behaviour of a Langmuir probe in a flowing plasma

1972 ◽  
Vol 8 (14) ◽  
pp. 361 ◽  
Author(s):  
R.M. Clements ◽  
R.D. Kerr ◽  
A.A. Offenberger ◽  
P.R. Smy
Keyword(s):  
Langmuir Probe ◽  
Saturation Current ◽  
Flowing Plasma ◽  
Current Behaviour

scholarly journals Ion current optimization in a magnetron with tunable magnetic field configuration

2021 ◽  
Vol 2064 (1) ◽  
pp. 012061
Author(s):  
A V Kaziev ◽  
D G Ageychenkov ◽  
A V Tumarkin ◽  
D V Kolodko ◽  
N S Sergeev ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Langmuir Probe ◽  
Magnetic System ◽  
Field Configuration ◽  
Ion Current ◽  
Saturation Current ◽  
System Configuration ◽  
Magnetic Field Configuration ◽  
Aluminum Target ◽  
Direct Current Sputtering

Abstract The response of the ion current in the substrate region to the magnetic system configuration of a circular magnetron was studied during direct current sputtering of aluminum target. The unbalancing degree induced by changing of magnets’ positions was modelled with finite element methods. The ion saturation current in the substrate region showed more than twofold variation with unbalancing degree in the range 0.6–1.2. The dependence was non-monotonic, and the system was optimized to maximize the substrate ion current. The Langmuir probe diagnostics showed plasma density ~ 1016 m−3 in the optimized magnetic configuration.

scholarly journals A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 488
Author(s):  
Hujun Jia ◽  
Mengyu Dong ◽  
Xiaowei Wang ◽  
Shunwei Zhu ◽  
Yintang Yang
Keyword(s):  
Breakdown Voltage ◽  
Direct Current ◽  
Oscillation Frequency ◽  
The Novel ◽  
Saturation Current ◽  
Excellent Performance ◽  
Maximum Oscillation Frequency ◽  
Power Added Efficiency ◽  
Novel Structure ◽  
Heavily Doped

A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, reduces the gate-source capacitance (Cgs) by adding a lightly doped region and improves the breakdown voltage (Vb) by embedding an insulated region (Si3N4). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (fmax), the maximum power added efficiency and the maximum theoretical output power density (Pmax) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure.

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