scholarly journals Solar-blind ultraviolet photodetector based on (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 single crystal

AIP Advances ◽  
2017 ◽  
Vol 7 (3) ◽  
pp. 035302 ◽  
Author(s):  
Jian-yu Du ◽  
Chen Ge ◽  
Jie Xing ◽  
Jian-kun Li ◽  
Kui-juan Jin ◽  
...  
2013 ◽  
Vol 1538 ◽  
pp. 405-410
Author(s):  
Shaoping Wang ◽  
Aneta Kopec ◽  
Andrew G. Timmerman

ABSTRACTA ZnO single crystal is a native substrate for epitaxial growth of high-quality thin films of ZnO-based Group II-oxides (e.g. ZnO, ZnMgO, ZnCdO) for variety of devices, such as UV and visible-light emitting diodes (LEDs), UV laser diodes and solar-blind UV detectors. Currently, commercially available ZnO single crystal wafers are produced using a hydrothermal technique. The main drawback of hydrothermal growth technique is that the ZnO crystals contain large amounts of alkaline metals, such as Li and K. These alkaline metals are electrically active and hence can be detrimental to device performances. In this paper, results from a recently developed novel growth technique for ZnO single crystal boules are presented. Lithium-free ZnO single crystal boules of up to 1 inch in diameter was demonstrated using the novel technique. Results from crystal growth and materials characterization will be discussed.


2015 ◽  
Vol 3 (3) ◽  
pp. 596-600 ◽  
Author(s):  
Jiangxin Wang ◽  
Chaoyi Yan ◽  
Meng-Fang Lin ◽  
Kazuhito Tsukagoshi ◽  
Pooi See Lee

An all-NW ultraviolet photodetector with high photoresponse and improved switching time was fabricated by a solution assembly method.


2020 ◽  
Vol 10 (6) ◽  
pp. 1374 ◽  
Author(s):  
Ziyue Rao ◽  
Wenyi Liang ◽  
Haiming Huang ◽  
Jun Ge ◽  
Weiliang Wang ◽  
...  

Nanophotonics ◽  
2018 ◽  
Vol 7 (9) ◽  
pp. 1557-1562 ◽  
Author(s):  
Tao He ◽  
Yukun Zhao ◽  
Xiaodong Zhang ◽  
Wenkui Lin ◽  
Kai Fu ◽  
...  

AbstractIn this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga2O3 nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga2O3 nanowire arrays have been realized. Ga2O3 nanowires were obtained by thermally oxidizing GaN nanowires grown by molecular beam epitaxy on n-doped Si substrate. Then, a monolayer graphene film was transferred to Ga2O3 nanowires to form the graphene/vertical Ga2O3 nanowire array heterojunction and transparent electrodes. The fabricated device exhibited a responsivity (R) of 0.185 A/W and rejection ratio (R258 nm/R365 nm) of 3×104 at the bias of −5 V. Moreover, the fast response times of this PD were 9 and 8 ms for the rise and decay times under 254 nm illumination, respectively, which are attributed to the unique properties of nanowire arrays and the graphene/vertical Ga2O3 nanowire array heterojunction structure.


2021 ◽  
Vol 42 (11) ◽  
pp. 1653-1660
Author(s):  
Qiu-ju FENG ◽  
◽  
Jin-zhu XIE ◽  
Zeng-jie DONG ◽  
Chong GAO ◽  
...  

2021 ◽  
Vol 123 ◽  
pp. 105532
Author(s):  
Xu Cao ◽  
Yanhui Xing ◽  
Jun Han ◽  
Junshuai Li ◽  
Tao He ◽  
...  

2001 ◽  
Author(s):  
Ryan McClintock ◽  
Peter M. Sandvik ◽  
Kan Mi ◽  
Fatemeh Shahedipour ◽  
Alireza Yasan ◽  
...  

2020 ◽  
Vol 53 (50) ◽  
pp. 504001
Author(s):  
Yanxin Sui ◽  
Huili Liang ◽  
Wenxing Huo ◽  
Yan Wang ◽  
Zengxia Mei

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