A Novel Technique for Growth of Lithium-free ZnO Single Crystals

2013 ◽  
Vol 1538 ◽  
pp. 405-410
Author(s):  
Shaoping Wang ◽  
Aneta Kopec ◽  
Andrew G. Timmerman

ABSTRACTA ZnO single crystal is a native substrate for epitaxial growth of high-quality thin films of ZnO-based Group II-oxides (e.g. ZnO, ZnMgO, ZnCdO) for variety of devices, such as UV and visible-light emitting diodes (LEDs), UV laser diodes and solar-blind UV detectors. Currently, commercially available ZnO single crystal wafers are produced using a hydrothermal technique. The main drawback of hydrothermal growth technique is that the ZnO crystals contain large amounts of alkaline metals, such as Li and K. These alkaline metals are electrically active and hence can be detrimental to device performances. In this paper, results from a recently developed novel growth technique for ZnO single crystal boules are presented. Lithium-free ZnO single crystal boules of up to 1 inch in diameter was demonstrated using the novel technique. Results from crystal growth and materials characterization will be discussed.

2008 ◽  
Vol 103 (7) ◽  
pp. 07D128 ◽  
Author(s):  
J. C. A. Huang ◽  
H. S. Hsu ◽  
J. H. Sun ◽  
S. L. Chiu ◽  
C. H. Lee ◽  
...  

2013 ◽  
Vol 140 ◽  
pp. 110-113 ◽  
Author(s):  
Songzhan Li ◽  
Wenwen Lin ◽  
Guojia Fang ◽  
Feng Huang ◽  
Huihui Huang ◽  
...  

1986 ◽  
Vol 67 ◽  
Author(s):  
R. T. Tung ◽  
J. M. Gibson

ABSTRACTThis paper reviews the “template” growth technique in UHV and the novel structures and properties of single crystal silicide thin films and double heterostructures.


2019 ◽  
Vol 789 ◽  
pp. 841-851 ◽  
Author(s):  
Zihan Huang ◽  
Yinzhou Yan ◽  
Cheng Xing ◽  
Qiang Wang ◽  
Jingfeng Li ◽  
...  

2014 ◽  
Vol 1633 ◽  
pp. 51-54
Author(s):  
Florian Schmidt ◽  
Peter Schlupp ◽  
Stefan Müller ◽  
Christof Peter Dietrich ◽  
Holger von Wenckstern ◽  
...  

ABSTRACTWe have investigated the electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition on an a-plane sapphire, and a hydrothermally grown Zn-face ZnO single crystal (Tokyo Denpa Co. Ltd.). The samples were investigated by means of current-voltage measurements, capacitance-voltage measurements, and deep-level transient spectroscopy.The defects T2 [1,2] and E3 [1,3,4] were identified in all three sample types. Additionally, in the single crystal and thin film samples E64 [5] and E4 [1] were detected. These findings support the common opinion that T2 is an intrinsic defect since it is found in all the samples investigated and thus its occurrence is not related to any growth technique.


2020 ◽  
Author(s):  
Keishiro Yamashita ◽  
Kazuki Komatsu ◽  
Hiroyuki Kagi

An crystal-growth technique for single crystal x-ray structure analysis of high-pressure forms of hydrogen-bonded crystals is proposed. We used alcohol mixture (methanol: ethanol = 4:1 in volumetric ratio), which is a widely used pressure transmitting medium, inhibiting the nucleation and growth of unwanted crystals. In this paper, two kinds of single crystals which have not been obtained using a conventional experimental technique were obtained using this technique: ice VI at 1.99 GPa and MgCl<sub>2</sub>·7H<sub>2</sub>O at 2.50 GPa at room temperature. Here we first report the crystal structure of MgCl2·7H2O. This technique simultaneously meets the requirement of hydrostaticity for high-pressure experiments and has feasibility for further in-situ measurements.


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